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In the manufacture of an integrated-circuit device, periodic interruption of grain growth during chemical vapor deposition of a metal film results in enhanced surface smoothness and ease of patterning. Interruption of grain growth is by deposition of an auxiliary material which, in the interest of h

In the manufacture of an integrated-circuit device, periodic interruption of grain growth during chemical vapor deposition of a metal film results in enhanced surface smoothness and ease of patterning. Interruption of grain growth is by deposition of an auxiliary material which, in the interest of high conductivity of the film, may be conductive, may form a conductive compound or alloy, or may be eliminated upon additional metal deposition. When the metal is tungsten, silicon is a preferred grain-growth interrupting material.

대표청구항 ▼

A method for making an integrated-circuit device which includes a dielectric, comprising forming a metallization on said dielectric, and forming said metallization comprising the steps of: depositing a first metal layer, forming on said first metal layer a grain-growth interrupting layer which is se

A method for making an integrated-circuit device which includes a dielectric, comprising forming a metallization on said dielectric, and forming said metallization comprising the steps of: depositing a first metal layer, forming on said first metal layer a grain-growth interrupting layer which is selected to cause renucleation of metal upon further metal deposition, and which is selected from the group consisting of conductive materials, materials which form intermetallic compounds with said metal, materials which form conductive alloys with said metal, and materials which are essentially eliminated upon subsequent metal deposition, and depositing a second metal layer on said grain-growth interrupting layer, said second metal layer consisting essentially of the same metal as said first metal layer, second metal layer forming a renucleated metal layer, at least two grain-growth interrupting layers being deposited, whereby the resistivity of said metallization is less than or equal three times the resistivity of a comparison metallization consisting essentially of the same metallization material and having been deposited without grain-growth interruption.