초록 ▼

A lower alkyl polysilsesquioxane having a general formula [Figure] wherein R is CH3 is C2H5, and n is an integer equal to about 50 to about 10,000, prepared by (a) dissolving a lower alkyl trifunctional silane in an organic solvent at a temperature of -31 20°C. to -50°C. to form an organic solution

A lower alkyl polysilsesquioxane having a general formula [Figure] wherein R is CH3 is C2H5, and n is an integer equal to about 50 to about 10,000, prepared by (a) dissolving a lower alkyl trifunctional silane in an organic solvent at a temperature of -31 20°C. to -50°C. to form an organic solution thereof; (b) hydrolyzing the lower alkyl trifunctional silane by dropping water into the organic solution at a temperature of -20°C. to -50°C. under an inert gas pressurized at 1,000 to 3,000 Pa; and (c) gradually heating the organic solution together with a water phase lying therebeneath up to a temperature of 60°C. to 100°C. under an inert gas pressurized at 1,000 to 3,000 Pa. Also, a flat surfaced insulating layer of a silylated organopolysilsesquioxane having a general formula [Figure] wherein R is an alkyl or phenyl group, and n is an integer equal to about 50 to about 2,000, preferably about 50 to about 500, formed on a circuit board having stepwise differences in height thereon, by applying an organic solution of the polymer; evaporating the solvent; and melting the polymer to flatten the surface of the polymer and curing the polymer.

대표청구항 ▼

An electronic device having a multilayer wiring structure comprising: a substrate; a first metal wiring layer formed on portions of said substrate; an interlayer insulation layer formed on said substrate and said first metal wiring layer and comprising a cured coating of a ladder-type silylated sils

An electronic device having a multilayer wiring structure comprising: a substrate; a first metal wiring layer formed on portions of said substrate; an interlayer insulation layer formed on said substrate and said first metal wiring layer and comprising a cured coating of a ladder-type silylated silsesquioxane polymer having a general formula: [Figure] where R is selected from one of a methyl,ethyl and phenyl group, and n is an integer between 50 and 10,000 thereby providing a silylated silsesquioxane polymer which is capable of melting and forming a flat plane; and a second metal wiring layer formed on said interlayer insulation layer.