초록 ▼

A workpiece surface is provided with a layer which is applied by a sputter-CVD process. An optimum hardness and sliding quality of the layer is obtained at a positive bias of the workpiece surface relative to the plasma. For tungsten carbide/carbon layer, an optimum layer quality is attainable at a

A workpiece surface is provided with a layer which is applied by a sputter-CVD process. An optimum hardness and sliding quality of the layer is obtained at a positive bias of the workpiece surface relative to the plasma. For tungsten carbide/carbon layer, an optimum layer quality is attainable at a bias of thirty-five volts. Besides tungsten carbide/carbon layers, also silicide/silicon layers can be produced if volatile silicon compounds are used as the reactive gas.

대표청구항 ▼

A process for at least partially coating a workpiece by sputter chemical vapor deposition in a vacuum chamber, comprising: sputtering one cathode material which forms a cathode that is operated in conjunction with an anode, by applying a DC voltage between the cathode material and the anode; supplyi

A process for at least partially coating a workpiece by sputter chemical vapor deposition in a vacuum chamber, comprising: sputtering one cathode material which forms a cathode that is operated in conjunction with an anode, by applying a DC voltage between the cathode material and the anode; supplying a reactive gas to the vaccum chamber, said reactive gas having a component selected from at least one of a group including a hydrocarbon compound and a volatile silicon compound, the component being capable of reacting in a plasma-chemica1 reaction with the cathode material and of precipitating onto the workpiece a precipitate selected from the group including at least one of carbon and silicon, with at least one of a reaction product of carbon with the cathode material, and a reaction product of silicon with the cathode material; establishing a plasma in the vacuum chamber for decomposing said component and precipitating the precipitate; maintaining the surface of the workpiece to be coated at a DC voltage which is more positive than that of the plasma; and supplying current to the workpiece and to the cathode material, the current supplied to the workpiece being maintained at a level of at least 50% of the current being supplied to the cathode material so that an electrical conductive layer of the precipitate containing free carbon or silicon and the reaction product of carbon or silicon with the cathode material is deposited onto the surface of the workpiece to be coated by a sputter chemical vapor deposition process without the use of high frequency power.