초록 ▼

The invention discloses a dual ion beam ballistic alloying process for forming a film such as diamond onto a substrate, which comprises the steps of: (a) cleaning the surface of the substrate with a first energy beam of inert atoms; (b) depositing a layer of a desired non-hydrocarbon substance on th

The invention discloses a dual ion beam ballistic alloying process for forming a film such as diamond onto a substrate, which comprises the steps of: (a) cleaning the surface of the substrate with a first energy beam of inert atoms; (b) depositing a layer of a desired non-hydrocarbon substance on the substrate with a low energy, sputtered atomic beam; (c) simultaneously exposing the substrate to said first energy beam of inert atoms with a high energy to grow a ballistically alloyed layer having a thickness of about 10-2000 Å; and (d) reducing the energy level of the first, high energy beam to cause the growth of the layer of said substance on said substrate to a final desired thickness.

대표청구항 ▼

A process for forming a film adhered to a substrate in an evacuated atmosphere comprising: (a) cleaning the surface of the substrate with a first energy beam of inert atoms having an energy level in the range from about 500 eV to 1000 eV, (b) after said cleaning, sputtering a desired non-hydrocarbon

A process for forming a film adhered to a substrate in an evacuated atmosphere comprising: (a) cleaning the surface of the substrate with a first energy beam of inert atoms having an energy level in the range from about 500 eV to 1000 eV, (b) after said cleaning, sputtering a desired non-hydrocarbon substance within said atmosphere by a second beam of inert atoms having an energy rate of about 1-50 eV/atom at a rate and in a direction to cause such substance to deposit on said substrate, (c) simultaneously with said sputtering, exposing the substrate to said first energy beam of inert atoms at an energy level in the range from about 0.5 KeV to 100 KeV to grow a ballistically alloyed layer having a thickness of about 10-2000Åin said substrate, (d) subsequently of exposing the substrate to the first beam and the sputtering, continuing the sputtering and exposing the substrate to a lower energy beam of inert atoms from the source of said first beam at an energy level in the range from about 100 eV to 500 eV that will cause the growth of a film of said substance on said substrate to a final desired thickness.