초록 ▼

A self-aligned contact is formed in a multi-layer semiconductor device. In one form, conductive members are formed overlying a substrate material and a first insulating layer is deposited overlying the substrate material and the conductive members. A film of material is deposited on the first insula

A self-aligned contact is formed in a multi-layer semiconductor device. In one form, conductive members are formed overlying a substrate material and a first insulating layer is deposited overlying the substrate material and the conductive members. A film of material is deposited on the first insulating layer and the film of material is patterned to form a sacrificial plug in an area where a contact is to be made. A second insulating layer is deposited on the device, and the device is made substantially planar. The second insulating layer is etched back to expose the sacrificial plug. The sacrificial plug is removed by selectively etching the device such that the first and second insulating layers are left substantially unaltered. An anisotropic etch of the device is performed to expose an area of the substrate material on which a contact is to be made, and to simultaneously form sidewall spacers along edges of the conductive members. A conductive layer is deposited onto the device and patterned, thereby forming a self-aligned contact.

대표청구항 ▼

A process for fabricating a self-aligned contact in a multi-layer semiconductor device, comprising the steps of: providing a first insulating layer overlying a substrate material; depositing a film of material overlying the first insulating layer and having the ability to be selectively etched to th

A process for fabricating a self-aligned contact in a multi-layer semiconductor device, comprising the steps of: providing a first insulating layer overlying a substrate material; depositing a film of material overlying the first insulating layer and having the ability to be selectively etched to the first insulating layer; selectively etching the film of material to expose selected areas of the first insulating layer; depositing a second insulating layer overlying exposed surfaces of the first insulating layer and the film of material; etching the second insulating layer to expose the film of material; selectively etching the film of material to expose selected areas of the first insulating layer while keeping the first and second insulating layers substantially unaltered; anisotropically etching the exposed selected areas of the first insulating layer to expose selected areas of the substrate material; depositing a conductive layer on the device; and patterning the conductive layer to form a contact to the exposed selected areas of the substrate material.