초록 ▼

An EEPROM device provides increased speed and less susceptibility to soft writes during reading and programming operations. A unique circuit design and operating method obviates the need for applying a high programming or erase voltage in the path between the memory array and sense amplifier. Such h

An EEPROM device provides increased speed and less susceptibility to soft writes during reading and programming operations. A unique circuit design and operating method obviates the need for applying a high programming or erase voltage in the path between the memory array and sense amplifier. Such high programming and erase voltages are applied, as needed, directly to the memory array, thereby allowing all transistors which carry signals from the memory array to the sense amplifier to be fabricated as low voltage devices, thereby increasing their speed of operation and thus the speed of operation of the memory device as a whole. By applying the relatively high programming and erase voltages to the source of the memory transistors, and reading from the drain of the memory transistors, the source and drain as well as associated circuitry are fabricated to optimize their intended functions.

대표청구항

A memory device comprising: a memory cell comprising: a source region;

A memory device comprising: a memory cell comprising: a source region;