초록 ▼

A two-step process for forming champagne profiles on semiconductor wafers that provide, when metallized, good reliability, microcracking-free contacts and vias is disclosed. Dry etch apparatus having electrodes in a triode configuration, two plasma forming regions, and a pressure control system oper

A two-step process for forming champagne profiles on semiconductor wafers that provide, when metallized, good reliability, microcracking-free contacts and vias is disclosed. Dry etch apparatus having electrodes in a triode configuration, two plasma forming regions, and a pressure control system operative to provide a wide setpoint pressure range is also disclosed.

대표청구항 ▼

A process for fabricating champagne profiles in a layer previously applied to a substrate by the steps comprising: controllably producing a first plasma bearing charged and neutral species in a reaction vessel and in such a manner that the first plasma is electrically and physically isolated from th

A process for fabricating champagne profiles in a layer previously applied to a substrate by the steps comprising: controllably producing a first plasma bearing charged and neutral species in a reaction vessel and in such a manner that the first plasma is electrically and physically isolated from the substrate at a preselected comparatively-high pressure and corresponding comparatively-low mean free path in order to isotropically etch the layer primarily by the neutral species thereof; and thereafter producing a second plasma bearing charged and neutral species in the same reaction vessel and in such a manner that the second plasma is electrically coupled and physically proximate the wafer at a preselected comparatively-low pressure and corresponding comparatively-high mean free path in order to anisotropically etch the layer primarily by the charged species thereof.