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A multicolor infrared detection device comprising a number of doped quantum well structural units. Each unit consists of a thick well and a thin well separated by a thin barrier. This arrangement produces strong coupling. Infrared radiation incident on the device gives rise to intersubband absorptio

A multicolor infrared detection device comprising a number of doped quantum well structural units. Each unit consists of a thick well and a thin well separated by a thin barrier. This arrangement produces strong coupling. Infrared radiation incident on the device gives rise to intersubband absorption. For each transition a photosignal results which allows the detection of a plurality of incident frequencies.

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An infrared-radiation detection device comprising a semiconductor superlattice consisting of a plurality of quantum well units, each unit composed of a thick barrier, a thick quantum well having two confined states E1 and E2, a thin barrier, and a thin quantum well having one confined state E1, adju

An infrared-radiation detection device comprising a semiconductor superlattice consisting of a plurality of quantum well units, each unit composed of a thick barrier, a thick quantum well having two confined states E1 and E2, a thin barrier, and a thin quantum well having one confined state E1, adjusted to be very close to E2 when the wells are considered in isolation, such that the thick quantum well and the thin quantum well are brought close enough together that the wells become coupled and the level structure becomes common to both wells, and contact means for electrically biasing said superlattice and for sensing an electrical signal in response to radiation incident on said superlattice.