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Polishing pad with uniform abrasion 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • B24B-007/22
출원번호 US-0562288 (1990-08-03)
발명자 / 주소
  • Tuttle Mark E. (Boise ID)
출원인 / 주소
  • Micron Technology, Inc. (Boise ID 02)
인용정보 피인용 횟수 : 195  인용 특허 : 1

초록

A polishing pad for semiconductor wafers, having a face shaped by a series of voids. The voids are substantially the same size, but the frequency of the voids increases with increasing radial distance to provide a constant, or nearly constant, surface contact rate to a workpiece such as a semiconduc

대표청구항

Apparatus to polish a workpiece, comprising: a polishing pad, rotatable about an axis and having a face perpendicular to and coaxial with said axis; said face, in use, to be urged against the workpiece to facilitate polishing of same; said face shaped by a plurality of like sized substantially circu

이 특허에 인용된 특허 (1)

  1. Brandt Georg (Erlangen DEX), Method for machining workpieces of brittle hard material into wafers.

이 특허를 인용한 특허 (195)

  1. Duescher, Wayne O., Abrasive agglomerate coated raised island articles.
  2. Bruxvoort, Wesley J., Abrasive article suitable for modifying a semiconductor wafer.
  3. Rutherford Denise R. (Stillwater MN) Goetz Douglas P. (St. Paul MN) Thomas Cristina U. (Woodbury MN) Webb Richard J. (Inver Grove Heights MN) Bruxvoort Wesley J. (Woodbury MN) Buhler James D. (Shring, Abrasive construction for semiconductor wafer modification.
  4. Rutherford Denise R. ; Goetz Douglas P. ; Thomas Cristina U. ; Webb Richard J. ; Bruxvoort Wesley J. ; Buhler James D. ; Hollywood William J., Abrasive construction for semiconductor wafer modification.
  5. Taylor, Theodore M., Apparatus and method for conditioning a contact surface of a processing pad used in processing microelectronic workpieces.
  6. Taylor,Theodore M., Apparatus and method for conditioning a contact surface of a processing pad used in processing microelectronic workpieces.
  7. Taylor,Theodore M., Apparatus and method for conditioning a contact surface of a processing pad used in processing microelectronic workpieces.
  8. Taylor,Theodore M., Apparatus and method for conditioning a contact surface of a processing pad used in processing microelectronic workpieces.
  9. Taylor,Theodore M., Apparatus and method for conditioning a contact surface of a processing pad used in processing microelectronic workpieces.
  10. Taylor, Theodore M., Apparatus and method for enhanced processing of microelectronic workpieces.
  11. Birang, Manoocher; Johansson, Nils; Gleason, Allan, Apparatus and method for in-situ endpoint detection for semiconductor processing operations.
  12. Homayoun Talieh, Apparatus and method of polishing with slurry delivery through a polishing pad.
  13. Tang, Wallace T. Y., Apparatus for detection of thin films during chemical/mechanical polishing planarization.
  14. Lee Michael G. ; Beilin Solomon I., Apparatus for uniform chemical mechanical polishing by intermittent lifting and reversible rotation.
  15. Ramarajan, Suresh, Apparatuses and methods for conditioning polishing pads used in polishing micro-device workpieces.
  16. Ramarajan, Suresh, Apparatuses and methods for conditioning polishing pads used in polishing micro-device workpieces.
  17. Ramarajan, Suresh, Apparatuses and methods for conditioning polishing pads used in polishing micro-device workpieces.
  18. Agarwal,Vishnu K., Apparatuses and methods for in-situ optical endpointing on web-format planarizing machines in mechanical or chemical-mechanical planarization of microelectronic-device substrate assemblies.
  19. Ramarajan,Suresh, Apparatuses and methods for monitoring rotation of a conductive microfeature workpiece.
  20. Ramarajan,Suresh, Apparatuses and methods for monitoring rotation of a conductive microfeature workpiece.
  21. Agarwal,Vishnu K.; Chopra,Dinesh, Apparatuses for forming a planarizing pad for planarization of microlectronic substrates.
  22. Agarwal,Vishnu K., Apparatuses for in-situ optical endpointing on web-format planarizing machines in mechanical or chemical-mechanical planarization of microelectronic-device substrate assemblies.
  23. Kollodge, Jeffrey S.; Messner, Robert P., Article suitable for chemical mechanical planarization processes.
  24. Leach Michael A. (345 Sheridan #204 Palo Alto CA 94306), Block for polishing a wafer during manufacture of integrated circuits.
  25. Elmufdi,Carolina L.; Muldowney,Gregory P., CMP pad having unevenly spaced grooves.
  26. Dornfeld,David; Lee,Sunghoon, CMP pad with designed surface features.
  27. Cheek Roger W. ; Cronin John E. ; Nadeau Douglas P. ; Rutten Matthew J. ; Wright Terrance M., CMP polishing pad backside modifications for advantageous polishing results.
  28. Chopra, Dinesh, COPPER CHEMICAL-MECHANICAL POLISHING PROCESS USING A FIXED ABRASIVE POLISHING PAD AND A COPPER LAYER CHEMICAL-MECHANICAL POLISHING SOLUTION SPECIFICALLY ADAPTED FOR CHEMICAL-MECHANICAL POLISHING WITH.
  29. Chen, Hui; Zuniga, Steven M.; Chen, Hung Chih; Lau, Eric; Sin, Garrett Ho Yee; Chang, Shou-Sung, Carrier for small pad for chemical mechanical polishing.
  30. Shendon, Norm, Carrier head for a chemical mechanical polishing apparatus.
  31. Steven K. Grumbine ; Christopher C. Streinz ; Brian L. Mueller, Catalytic reactive pad for metal CMP.
  32. Lacy, Michael S.; Boyd, John M., Chemical mechanical planarization belt assembly and method of assembly.
  33. Smith, Christopher W.; White, John M., Chemical mechanical polisher with grooved belt.
  34. Talieh Homayoun, Chemical mechanical polishing apparatus using multiple polishing pads.
  35. Talieh Homayoun (San Jose CA), Chemical mechanical polishing apparatus with improved slurry distribution.
  36. Crkvenac, T. Todd; Hendron, Jeffrey J.; Muldowney, Gregory P., Chemical mechanical polishing method for reducing slurry reflux.
  37. Muldowney, Gregory P., Chemical mechanical polishing pad having a process-dependent groove configuration.
  38. Park, Inha; Kwon, Tae-Kyoung; Kim, Jaeseok, Chemical mechanical polishing pad having holes and or grooves.
  39. Talieh Homayoun, Chemical mechanical polishing with a small polishing pad.
  40. Talieh Homayoun, Chemical mechanical polishing with a small polishing pad.
  41. Robinson Karl M. ; Walker Michael A., Chemical-mechanical polishing of hydrophobic materials by use of incorporated-particle polishing pads.
  42. Cruz Jose Luis ; Messier Steven James ; Sturtevant Douglas Keith ; Tiersch Matthew Thomas, Composite polish pad for CMP.
  43. Hardy, L. Charles; Kranz, Heather K.; Wood, Thomas E.; Kaisaki, David A.; Gagliardi, John J.; Clark, John C.; Savu, Patricia M.; Clark, Philip G., Compositions and methods for modifying a surface suited for semiconductor fabrication.
  44. Chopra Dinesh, Copper chemical-mechanical polishing process using a fixed abrasive polishing pad and a copper layer chemical-mechanical polishing solution specifically adapted for chemical-mechanical polishing with.
  45. Drill, Charles Franklin; Weling, Milind, Customized polishing pad for selective process performance during chemical mechanical polishing.
  46. Roy, Pradip K.; Deopura, Manish; Misra, Sudhanshu, Customized polishing pads for CMP and methods of fabrication and use thereof.
  47. Uzoh Cyprian E., Electroetch and chemical mechanical polishing equipment.
  48. Doan, Trung T., Endpoint detector and method for measuring a change in wafer thickness in chemical-mechanical polishing of semiconductor wafers and other microelectronic substrates.
  49. Duescher, Wayne O., Equal sized spherical beads.
  50. Feng, Chung-Chih; Wu, Chun-Wei; Chiang, Kun-Lin; Huang, Yung-Ching, Extensible artificial leather and method for making the same.
  51. Goetz, Douglas P., Fixed abrasive article for use in modifying a semiconductor wafer.
  52. Goetz,Douglas P., Fixed abrasive article for use in modifying a semiconductor wafer.
  53. Anderson, Andrew C.; Hagen, Sarah L.; Lund, Jesse D.; Raithel, David C.; Sachs, Jr., Kim C.; Zu, Lijun, Floor pad.
  54. Hagen, Sarah L.; Lund, Jesse D.; Sachs, Jr., Kim C.; Zu, Lijun; Anderson, Andrew C.; Raithel, David C., Floor pad.
  55. Lund, Jesse D.; Anderson, Andrew C.; Hagen, Sarah L.; Raithel, David C.; Sachs, Jr., Kim C.; Zu, Lijun, Floor pad.
  56. Raithel, David C.; Anderson, Andrew C.; Hagen, Sarah L.; Lund, Jesse D.; Sachs, Jr., Kim C.; Zu, Lijun, Floor pad.
  57. Kaiser Richard A. ; McLain Scott S. ; Schneider Jim D., Foam buffing pad of individual string-like members and method of manufacture thereof.
  58. McLain Scott S. ; Kaiser Richard A. ; Schneider Jim D., Foam buffing pad of string-like construction.
  59. Lombardo, Brian, Foam semiconductor polishing belts and pads.
  60. Birang Manoocher ; Gleason Allan ; Guthrie William L., Forming a transparent window in a polishing pad for a chemical mechanical polishing apparatus.
  61. Birang Manoocher ; Gleason Allan ; Guthrie William L., Forming a transparent window in a polishing pad for a chemical mechanical polishing apparatus.
  62. Birang,Manoocher; Gleason,Allan; Guthrie,William L., Forming a transparent window in a polishing pad for a chemical mechanical polishing apparatus.
  63. Lombardo, Brian; Otto, Jeffrey P., Froth and method of producing froth.
  64. Osterheld, Thomas H., Grid relief in CMP polishing pad to accurately measure pad wear, pad profile and pad wear profile.
  65. Hashimoto Hiroshi,JPX, Grinding tool.
  66. Schon Jurgen,DEX ; Kullmer Michael,DEX ; Danger Karl-Heinz,DEX, Grinding tool for dental purposes.
  67. Kerprich, Robert; Holland, Karey; Scott, Diane; Misra, Sudhanshu, Grooved CMP pad.
  68. Duescher, Wayne O., High speed flat lapping platen.
  69. Tang, Wallace T. Y., In-situ real-time monitoring technique and apparatus for detection of thin films during chemical/mechanical polishing planarization.
  70. Tang,Wallace T. Y., In-situ real-time monitoring technique and apparatus for detection of thin films during chemical/mechanical polishing planarization.
  71. Tang, Wallace T. Y., In-situ real-time monitoring technique and apparatus for endpoint detection of thin films during chemical/mechanical polishing planarization.
  72. Tang,Wallace T. Y., In-situ real-time monitoring technique and apparatus for endpoint detection of thin films during chemical/mechanical polishing planarization.
  73. Akram Salman ; Futrell John R. C. ; McDonald Steven M., Insert testing system.
  74. Pant Anil K. ; Jairath Rahul ; Mishra Kamal ; Chadda Saket ; Krusell Wilbur C., Integrated pad and belt for chemical mechanical polishing.
  75. Pant, Anil K.; Jairath, Rahul; Mishra, Kamal; Chadda, Saket; Krusell, Wilbur C., Integrated pad and belt for chemical mechanical polishing.
  76. Akram Salman ; Futrell John R. C. ; McDonald Steven M., Metallized recess in a substrate.
  77. Sabde, Gundu M.; Hofmann, James J.; Joslyn, Michael J.; Lee, Whonchee, Method and apparatus for chemical-mechanical planarization of microelectronic substrates with selected planarizing liquids.
  78. Chopra, Dinesh; Meikle, Scott G., Method and apparatus for controlling chemical interactions during planarization of microelectronic substrates.
  79. Chopra, Dinesh; Meikle, Scott G., Method and apparatus for controlling chemical interactions during planarization of microelectronic substrates.
  80. Boyd, John M.; Lacy, Michael S., Method and apparatus for fixed abrasive substrate preparation and use in a cluster CMP tool.
  81. Boyd, John M.; Lacy, Michael S., Method and apparatus for fixed abrasive substrate preparation and use in a cluster CMP tool.
  82. John M. Boyd ; Michael S. Lacy, Method and apparatus for fixed abrasive substrate preparation and use in a cluster CMP tool.
  83. Meikle, Scott G., Method and apparatus for forming a planarizing pad having a film and texture elements for planarization of microelectronic substrates.
  84. Meikle,Scott G., Method and apparatus for forming a planarizing pad having a film and texture elements for planarization of microelectronic substrates.
  85. Meikle,Scott G., Method and apparatus for forming a planarizing pad having a film and texture elements for planarization of microelectronic substrates.
  86. Kramer, Stephen J.; Joslyn, Michael J., Method and apparatus for forming and using planarizing pads for mechanical and chemical-mechanical planarization of microelectronic substrates.
  87. Kramer,Stephen J.; Joslyn,Michael J., Method and apparatus for forming and using planarizing pads for mechanical and chemical-mechanical planarization of microelectronic substrates.
  88. Jairath Rahul ; Pecen Jiri ; Chadda Saket ; Krusell Wilbur C. ; Cutini Jerauld J. ; Engdahl Erik H., Method and apparatus for in-situ end-point detection and optimization of a chemical-mechanical polishing process using a linear polisher.
  89. Jairath Rahul ; Pecen Jiri ; Chadda Saket ; Krusell Wilbur C. ; Cutini Jerauld J. ; Engdahl Erik H., Method and apparatus for in-situ end-point detection and optimization of a chemical-mechanical polishing process using a linear polisher.
  90. Pecen Jiri ; Chadda Saket ; Jairath Rahul ; Krusell Wilbur C., Method and apparatus for in-situ monitoring of thickness during chemical-mechanical polishing.
  91. Pecen, Jiri; Chadda, Saket; Jairath, Rahul; Krusell, Wilbur C., Method and apparatus for in-situ monitoring of thickness during chemical-mechanical polishing.
  92. Pecen Jiri ; Fielden John ; Chadda Saket ; LaComb ; Jr. Lloyd J. ; Jairath Rahul ; Krusell Wilbur C., Method and apparatus for in-situ monitoring of thickness using a multi-wavelength spectrometer during chemical-mechanical polishing.
  93. Robinson Karl M., Method and apparatus for increasing chemical-mechanical-polishing selectivity.
  94. Robinson, Karl M., Method and apparatus for increasing chemical-mechanical-polishing selectivity.
  95. Robinson Karl M., Method and apparatus for increasing-chemical-polishing selectivity.
  96. Kistler, Rodney C.; Carswell, Andrew, Method and apparatus for removing material from microfeature workpieces.
  97. Kistler, Rodney C.; Carswell, Andrew, Method and apparatus for removing material from microfeature workpieces.
  98. Kistler,Rodney C.; Carswell,Andrew, Method and apparatus for removing material from microfeature workpieces.
  99. Moore, Scott E., Method and apparatus for supporting a microelectronic substrate relative to a planarization pad.
  100. Moore,Scott E., Method and apparatus for supporting a microelectronic substrate relative to a planarization pad.
  101. Leach Michael A., Method and structure for polishing a wafer during manufacture of integrated circuits.
  102. Leach Michael A. (345 Sheridan #204 Palo Alto CA 94306), Method and structure for polishing a wafer during manufacture of integrated circuits.
  103. Robinson Karl M. ; Walker Michael A., Method for chemical-mechanical planarization of stop-on-feature semiconductor wafers.
  104. Agarwal, Vishnu K.; Chopra, Dinesh, Method for forming a planarizing pad for planarization of microelectronic substrates.
  105. Kramer,Stephen J.; Joslyn,Michael J., Method for forming and using planarizing pads for mechanical and chemical-mechanical planarization of microelectronic substrates.
  106. Doan Trung Tri ; Meikle Scott G., Method for making polishing pad with elongated microcolumns.
  107. Hempel Eugene O. (Garland TX), Method for performing chemical mechanical polish (CMP) of a wafer.
  108. Budinger William D. ; Jensen Elmer William ; McClain Harry George ; Roberts John V. H. ; Reinhardt Heinz F., Method for planarizing a semiconductor device surface with polymeric pad containing hollow polymeric microelements.
  109. Shamouillan Shamouil (San Jose CA) Clark Daniel O. (Pleasanton CA), Method of fabricating chemical-mechanical polishing pad providing polishing uniformity.
  110. Duescher, Wayne O., Method of forming a flexible abrasive sheet article.
  111. Birang Manoocher ; Gleason Allan ; Guthrie William L., Method of forming a transparent window in a polishing pad.
  112. Birang, Manoocher; Gleason, Allan; Guthrie, William L., Method of forming a transparent window in a polishing pad.
  113. Akram Salman ; Futrell John R. C. ; McDonald Steven M., Method of making a metallized recess in a substrate.
  114. Wiswesser, Andreas Norbert; Oshana, Ramiel; Hughes, Kerry F.; Rohde, Jay; Huo, David Datong; Benvegnu, Dominic J., Method of making and apparatus having polishing pad with window.
  115. Kaiser Richard A. ; McLain Scott S. ; Schneider Jim D., Method of manufacturing a foam buffing pad of string-like members.
  116. Bruxvoort Wesley J. ; Culler Scott R. ; Ho Kwok-Lun ; Kaisaki David A. ; Kessel Carl R. ; Klun Thomas P. ; Kranz Heather K. ; Messner Robert P. ; Webb Richard J. ; Williams Julia P., Method of modifying an exposed surface of a semiconductor wafer.
  117. Kaisaki David A. ; Kranz Heather K. ; Wood Thomas E. ; Hardy L. Charles, Method of planarizing the upper surface of a semiconductor wafer.
  118. Marshall, Brian, Methods and apparatuses for analyzing and controlling performance parameters in mechanical and chemical-mechanical planarization of microelectronic substrates.
  119. Marshall, Brian, Methods and apparatuses for analyzing and controlling performance parameters in mechanical and chemical-mechanical planarization of microelectronic substrates.
  120. Blalock, Guy T., Methods and apparatuses for making and using planarizing pads for mechanical and chemical mechanical planarization of microelectronic substrates.
  121. Blalock, Guy T., Methods and apparatuses for making and using planarizing pads for mechanical and chemical-mechanical planarization of microelectronic substrates.
  122. Blalock, Guy T., Methods and apparatuses for making and using planarizing pads for mechanical and chemical-mechanical planarization of microelectronic substrates.
  123. Blalock,Guy T., Methods and apparatuses for making and using planarizing pads for mechanical and chemical-mechanical planarization of microelectronic substrates.
  124. Elledge, Jason B., Methods and systems for planarizing workpieces, e.g., microelectronic workpieces.
  125. Elledge,Jason B., Methods and systems for planarizing workpieces, e.g., microelectronic workpieces.
  126. Elledge,Jason B., Methods and systems for planarizing workpieces, e.g., microelectronic workpieces.
  127. Marshall,Brian, Methods for analyzing and controlling performance parameters in mechanical and chemical-mechanical planarization of microelectronic substrates.
  128. Chen, Hung Chih; Butterfield, Paul D.; Gurusamy, Jay; Fung, Jason Garcheung; Chang, Shou-Sung; Zhang, Jimin; Lau, Eric, Orbital polishing with small pad.
  129. Takahashi, Shogo; Shimizu, Hajime, Perforated-transparent polishing pad.
  130. Moore, Scott E., Planarizing machines and control systems for mechanical and/or chemical-mechanical planarization of microelectronic substrates.
  131. Joslyn,Michael J., Planarizing machines and methods for dispensing planarizing solutions in the processing of microelectronic workpieces.
  132. Agarwal, Vishnu K.; Chopra, Dinesh, Planarizing pads for planarization of microelectronic substrates.
  133. Dapeng Wang, Planarizing pads, planarizing machines and methods for making and using planarizing pads in mechanical and chemical-mechanical planarization of microelectronic device substrate assemblies.
  134. Birang,Manoocher; Gleason,Allan; Guthrie,William L., Polishing assembly with a window.
  135. Elledge, Jason B., Polishing machines including under-pads and methods for mechanical and/or chemical-mechanical polishing of microfeature workpieces.
  136. Wright, Herschel, Polishing pad.
  137. Fujita Takashi,JPX ; Kozai Yuzo,JPX ; Ohara Motoyuki,JPX, Polishing pad and apparatus for polishing a semiconductor wafer.
  138. Kollodge, Jeffrey S.; Messner, Robert P., Polishing pad and method of use thereof.
  139. Robinson Karl M. ; Walker Michael A., Polishing pad and system.
  140. Chen, Hung Chih, Polishing pad configuration and chemical mechanical polishing system.
  141. Chen, Hung Chih, Polishing pad configuration and polishing pad support.
  142. Syun-Ming Jang TW; Ying-Ho Chen TW, Polishing pad for a linear polisher and method for forming.
  143. Anjur Sriram P. ; Downing William C., Polishing pad for a semiconductor substrate.
  144. Sevilla Roland K. ; Kaufman Frank B. ; Anjur Sriram P., Polishing pad for a semiconductor substrate.
  145. Yu Chris Chang, Polishing pad for chemical-mechanical polishing of a semiconductor substrate.
  146. Yu Tat-Kwan (Austin TX) Yu Chris C. (Austin TX), Polishing pad for chemical-mechanical polishing of a semiconductor substrate.
  147. Nishio Mikio,JPX ; Murakami Tomoyasu,JPX, Polishing pad for semiconductor wafer and method for polishing semiconductor wafer.
  148. Kim Kyung-hyun,KRX, Polishing pad for use in the chemical/mechanical polishing of a semiconductor substrate and method of polishing the substrate using the pad.
  149. Bennett Doyle E. ; Osterheld Thomas H. ; Redeker Fred C. ; Addiego Ginetto, Polishing pad having a grooved pattern for use in a chemical mechanical polishing apparatus.
  150. Bennett Doyle E. ; Redeker Fred C. ; Osterheld Thomas H. ; Addiego Ginnetto, Polishing pad having a grooved pattern for use in a chemical mechanical polishing apparatus.
  151. Osterheld, Thomas H.; Ko, Sen-Hou, Polishing pad having a grooved pattern for use in a chemical mechanical polishing apparatus.
  152. Osterheld, Thomas H; Ko, Sen-Hou, Polishing pad having a grooved pattern for use in a chemical mechanical polishing apparatus.
  153. Osterheld Tom ; Ko Sen-hou, Polishing pad having a grooved pattern for use in a chemical mechanical polishing system.
  154. Bennett, Doyle E.; Osterheld, Thomas H.; Redeker, Fred C.; Addiego, Ginetto, Polishing pad having a grooved pattern for use in chemical mechanical polishing.
  155. Osterheld, Thomas H.; Ko, Sen-Hou, Polishing pad having a grooved pattern for use in chemical mechanical polishing.
  156. Raeder Christopher H. ; Shipley Kevin, Polishing pad having open area which varies with distance from initial pad surface.
  157. Tuttle, Mark E., Polishing pad with controlled abrasion rate.
  158. Doan Trung Tri ; Meikle Scott G., Polishing pad with elongated microcolumns.
  159. Muldowney, Gregory P., Polishing pad with optimized grooves and method of forming same.
  160. Prasad,Abaneshwar, Polishing pad with oriented pore structure.
  161. Kessel, Carl R., Polishing pad with release layer.
  162. Wiswesser,Andreas Norbert; Oshana,Ramiel; Hughes,Kerry F.; Rohde,Jay; Huo,David Datong; Benvegnu,Dominic J., Polishing pad with window.
  163. Birang,Manoocher; Gleason,Allan; Guthrie,William L., Polishing pad with window and method of fabricating a window in a polishing pad.
  164. Sevilla Roland K. ; Kaufman Frank B. ; Anjur Sriram P., Polishing pads for a semiconductor substrate.
  165. Dudovicz, Walter, Polishing silicon wafers.
  166. Dudovicz, Walter, Polishing silicon wafers.
  167. Ladjias, Andreas C., Polishing system.
  168. Reinhardt Heinz F. (Chadds Ford PA) Roberts John V. H. (Newark DE) McClain Harry G. (Middletown DE) Budinger William D. (Newark DE) Jensen Elmer W. (New Castle DE), Polymeric polishing pad containing hollow polymeric microelements.
  169. Heinz F. Reinhardt ; John V. H. Roberts ; Harry George McClain ; William D. Budinger ; Elmer William Jensen, Polymeric polishing pad having continuously regenerated work surface.
  170. Nagabushnam Rajan ; Iyer Subramoney V., Process for forming a semiconductor device.
  171. Nagabushnam Rajan ; Iyer Subramoney V., Process for forming a semiconductor device.
  172. Duescher, Wayne O., Raised island abrasive and process of manufacture.
  173. Duescher, Wayne O., Raised island abrasive, lapping apparatus and method of use.
  174. Taylor,Theodore M., Shaped polishing pads for beveling microfeature workpiece edges, and associate system and methods.
  175. Taylor,Theodore M., Shaped polishing pads for beveling microfeature workpiece edges, and associated systems and methods.
  176. Taylor,Theodore M., Shaped polishing pads for beveling microfeature workpiece edges, and associated systems and methods.
  177. Wang,Lung Chuan; Feng,Chung Chih; Cheng,Kuo Kuang; Cheng,Ta Min; Lin,Chih Yi; Chang,Kuan Hsiang; Yang,Gao Long, Substrate of artificial leather including ultrafine fibers and methods for making the same.
  178. Talieh Homayoun, Substrate polishing apparatus.
  179. Talieh Homayoun, Substrate polishing apparatus.
  180. Talieh, Homayoun, Substrate polishing apparatus.
  181. Birang, Manoocher; Pyatigorsky, Grigory, Substrate polishing metrology using interference signals.
  182. Birang, Manoocher; Pyatigorsky, Grigory, Substrate polishing metrology using interference signals.
  183. Birang, Manoocher; Pyatigorsky, Grigory, Substrate polishing metrology using interference signals.
  184. Birang, Manoocher; Pyatigorsky, Grigory, Substrate polishing metrology using interference signals.
  185. Klein, Rita J., System for planarizing microelectronic substrates having apertures.
  186. Bastian, Joseph A.; Reukauf, Jeremey T., Systems and methods for removing microfeature workpiece surface defects.
  187. Bastian,Joseph A.; Reukauf,Jeremey T., Systems and methods for removing microfeature workpiece surface defects.
  188. Chopra Dinesh ; Meikle Scott G., Tungsten chemical-mechanical polishing process using a fixed abrasive polishing pad and a tungsten layer chemical-mechanical polishing solution specifically adapted for chemical-mechanical polishing .
  189. Chopra Dinesh ; Meikle Scott G., Tungsten chemical-mechanical polishing process using a fixed abrasive polishing pad and a tungsten layer chemical-mechanical polishing solution specifically adapted for chemical-mechanical polishing .
  190. Feng, Chung-Chih; Chao, Chen-Hsiang; Yao, I-Peng, Ultra fine fiber polishing pad.
  191. Cangshan Xu ; Brian S. Lombardo, Unsupported chemical mechanical polishing belt.
  192. Wright David Q. ; Skrovan John K., Variable abrasive polishing pad for mechanical and chemical-mechanical planarization.
  193. Wright David Q. ; Skrovan John K., Variable abrasive polishing pad for mechanical and chemical-mechanical planarization.
  194. Bajaj Rajeev ; Litvak Herbert E. ; Surana Rahul K. ; Jew Stephen C. ; Pecen Jiri, Wafer polishing device with movable window.
  195. Bajaj Rajeev ; Litvak Herbert E. ; Surana Rahul K. ; Jew Stephen C. ; Pecen Jiri, Wafer polishing device with movable window.
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