초록 ▼

A polysilicon film is formed on an Si substrate through an insulating oxide film, and a composite film constituted by oxide and nitride films is formed on the polysilicon film. A polycide layer is formed on the composite film, and a metal electrode layer serving as a bonding pad is formed on the pol

A polysilicon film is formed on an Si substrate through an insulating oxide film, and a composite film constituted by oxide and nitride films is formed on the polysilicon film. A polycide layer is formed on the composite film, and a metal electrode layer serving as a bonding pad is formed on the polycide layer through a barrier metal layer.

대표청구항 ▼

1. A semiconductor device comprising: a semiconductor substrate; a first insulating layer formed on said semiconductor substrate; a polysilicon film formed on said first insulating layer; a second insulating layer formed on said polysilicon film, said second insulating layer including a compos

1. A semiconductor device comprising: a semiconductor substrate; a first insulating layer formed on said semiconductor substrate; a polysilicon film formed on said first insulating layer; a second insulating layer formed on said polysilicon film, said second insulating layer including a composite film including oxide and nitride films; a polysilicon layer formed on said second insulating layer; and a metal electrode layer formed over said second polysilicon layer, said metal electrode layer being used as a bonding pad for bonding a wire thereon. 2. A device according to claim 1, further comprising a silicide layer formed between said polysilicon layer and said metal electrode. 3. A device according to claim 2, further comprising a barrier metal layer formed between said silicide layer and said metal electrode. 4. A device according to claim 2, wherein said silicide layer comprises molybdenum silicide. 5. A device according to claim 1, further comprising a barrier metal layer formed between said polysilicon layer and said metal electrode. 6. A semiconductor device comprising: a semiconductor substrate; an insulating layer formed on said semiconductor substrate; a first polysilicon layer formed on said insulating layer; a composite film formed on said first polysilicon layer, said composite film including oxide and nitride films; a polycide layer formed on said composite film; an interlevel insulator formed over said insulating layer and said polycide layer; a second polysilicon layer formed on said interlevel insulator; and a metal electrode layer, formed over said second polysilicon layer, constituting a bonding pad for bonding a wire thereon. 7. A device according to claim 6, further comprising a barrier metal layer formed between said second polysilicon layer and said metal electrode layer. 8. A device according to claim 6, wherein said polycide layer comprises: a third polysilicon layer formed on said composite film; and a molybdenum silicide layer formed on said third polysilicon layer. 9. A semiconductor device comprising: a semiconductor substrate; an insulating layer formed on said semiconductor substrate; a polysilicon film formed on said insulating layer; a composite film formed on said polysilicon film, said composite film including oxide and nitride films; a polycide layer formed on said composite film; and a metal electrode layer, formed over said polycide layer, constituting a bonding pad for bonding a wire thereon. 10. A semiconductor device comprising: a semiconductor substrate; an insulating layer formed on said semiconductor substrate; first polysilicon layer formed on said insulating layer; a composite film formed on said first polysilicon layer, said composite film including oxide and nitride films; a second polysilicon layer formed on said composite film; an interlevel insulator formed over said insulating layer and said second polysilicon layer; a third polysilicon layer formed on said interlevel insulator; and a metal electrode layer, formed over said third polysilicon layer, constituting a bonding pad for bonding a wire thereon. 11. A device according to claim 10, further comprising a barrier metal layer formed between said third polysilicon layer and said metal electrode.