초록 ▼

A first polysilicon layer (18) is initially deposited onto a layer of field oxide (16). A dielectric (26) is formed on a portion of the first polysilicon layer (18). A second polysilicon layer (28) is deposited over the dielectric (26) and the first polysilicon layer (18). After the selective deposi

A first polysilicon layer (18) is initially deposited onto a layer of field oxide (16). A dielectric (26) is formed on a portion of the first polysilicon layer (18). A second polysilicon layer (28) is deposited over the dielectric (26) and the first polysilicon layer (18). After the selective deposition of a mask (30) on to the second polysilicon layer (28), the polysilicon layers (18, 28) are anistropically etched to form a polysilicon to polysilicon capacitor (34) and a contact (36) of the capacitor (34). The dielectric (26) functions as an insulator for the capacitor (34) and as a barrier during anisotropic etching for protecting the underlying polysilicon layer (18).

대표청구항 ▼

A method for forming a polysilicon to polysilicon capacitor comprising the steps of: depositing a first polysilicon layer on an underlying layer; forming a dielectric on a portion of said first polysilicon layer; depositing a second polysilicon layer onto said dielectric and into said first polysili

A method for forming a polysilicon to polysilicon capacitor comprising the steps of: depositing a first polysilicon layer on an underlying layer; forming a dielectric on a portion of said first polysilicon layer; depositing a second polysilicon layer onto said dielectric and into said first polysilicon layer; and etching said second and said first polysilicon layers to form the capacitor.