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[미국특허] Multilayered device micro etching method and system 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01J-037/305
출원번호 US-0391304 (1989-08-08)
우선권정보 JP-0212453 (1988-08-29)
발명자 / 주소
  • Haraichi Satoshi (Yokohama JPX) Itoh Fumikazu (Fujisawa JPX) Shimase Akira (Yokohama JPX) Takahashi Takahiko (Iruma JPX)
출원인 / 주소
  • Hitachi, Ltd. (Tokyo JPX 03)
인용정보 피인용 횟수 : 82  인용 특허 : 0

초록 ▼

In locally reactive etching by irradiating to a multilayered workpiece reactive beam generated by extracting the reactant gas ionized or by irradiating such focussing beam as ion beam, electron beam or laser beam to the multilayered workpiece in an atmosphere of reactant gas; each layer of a multila

대표청구항 ▼

In a micro etching method of irradiating an energy beam to a workpiece in an atmosphere of reactant gas to apply reactive etching locally on an irradiation portion of said workpiece; a multilayered device micro etching method comprising steps of: detecting a material change of layer currently being

이 특허를 인용한 특허 (82) 인용/피인용 타임라인 분석

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