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[미국특허] Low-temperature in-situ dry cleaning process for semiconductor wafers 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-021/306
출원번호 US-0509251 (1990-04-16)
발명자 / 주소
  • Moslehi Mehrdad M. (Dallas TX)
출원인 / 주소
  • Texas Instruments Incorporated (Dallas TX 02)
인용정보 피인용 횟수 : 242  인용 특허 : 0

초록 ▼

A low-temperature (650°C. to 800°C.) in-situ dry cleaning process (FIG. 2) for removing native oxide (and other contaminants) from a semiconductor surface can be used with either multi-wafer or single-wafer semiconductor device manufacturing reactors. A wafer is contacted with a dry cleaning mixture

대표청구항 ▼

A method off semiconductor multiprocessing for fabricating a semiconductor wafer in a sequence of more than one process step, comprising the steps of: during each transition between process steps, maintaining wafer temperature at a level high enough to substantially reduce temperature swings on the

이 특허를 인용한 특허 (242) 인용/피인용 타임라인 분석

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