[특허]Double-dome reactor for semiconductor processing

Double-dome reactor for semiconductor processing 원문보기

IPC분류정보
국가/구분	United States(US) Patent 등록
국제특허분류(IPC7판)	C23C-016/00
출원번호	US-0491416 (1990-03-09)
발명자 / 주소	Anderson Roger N. (Santa Clara CA) Martin John G. (Cranford NJ) Meyer Douglas (Tempe AZ) West Daniel (Sunnyvale CA) Bowman Russell (San Jose CA) Adams David V. (San Jose CA)
출원인 / 주소	Applied Materials, Inc. (Santa Clara CA 02)
인용정보	피인용 횟수 : 109 인용 특허 : 0

초록 ▼

A thermal reactor for epitaxial deposition on a wafer comprises a double-dome vessel and dual heat sources. Each heat source comprises inner and outer circular arrays of infrared lamps. Circumferential heating uniformity is assured by the cylindrical symmetry of the vessel and the heating sources. Radial heating uniformity is provided by independent control of inner and outer heating arrays for both the top and bottom heat sources. The relative temperatures of wafer and susceptor are controlled by adjusting relative energies provided by the upper and lower heat sources so that backside migration. Reduced pressure operation is provided for by the convex top and bottom domes. Due to the provided control over transmitted energy distribution, a susceptor can have low thermal mass so that elevated temperature can be achieved more quickly and cooling can be facilitated as well. This improves throughput and reduces manufacturing costs per wafer. Reagent gas introduction can be axial or radial as desired.

대표청구항 ▼

A reactor for semiconductor processing comprising: a reactor vessel defining a reactor chamber, said reactor vessel having a first dome and a second dome, said second dome opposing said first dome, said first and second domes being mechanically coupled so that they share a common axis of cylindrical symmetry; wafer holding means for holding a wafer having a first face and a second face, said wafer holding means holding said wafer so that said faces are perpendicular to said axis; a first heat source external to said chamber and arranged to radiate energy through said first dome toward said wafer; and a second heat source external to said chamber and arranged to radiate energy through said second dome toward said wafer; and gas handling means for introducing gases into and evacuating gases from said chamber. A method of processing a semiconductor wafer, said method comprising the steps of: a) mounting said wafer on a susceptor within a chamber defined by opposing first and second domes; ‘b) radiating energy through said first dome toward said wafer and through said second dome toward said susceptor; and c) introducing reactant gas radially relative to an axis of cylindrical symmetry of said first dome through a gas manifold disposed between and mechanically coupled to said first and second domes so that reactant gas flows over said wafer.

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IPC	Description
A	생활필수품
A62	인명구조; 소방(사다리 E06C)
A62B	인명구조용의 기구, 장치 또는 방법(특히 의료용에 사용되는 밸브 A61M 39/00; 특히 물에서 쓰이는 인명구조 장치 또는 방법 B63C 9/00; 잠수장비 B63C 11/00; 특히 항공기에 쓰는 것, 예. 낙하산, 투출좌석 B64D; 특히 광산에서 쓰이는 구조장치 E21F 11/00)
A62B-1/08	.. 윈치 또는 풀리에 제동기구가 있는 것

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Double-dome reactor for semiconductor processing 원문보기

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Double-dome reactor for semiconductor processing 원문보기

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