[특허]High resolution amorphous silicon radiation detectors

High resolution amorphous silicon radiation detectors 원문보기

IPC분류정보
국가/구분	United States(US) Patent 등록
국제특허분류(IPC7판)	G01T-001/24
출원번호	US-0448240 (1989-12-11)
발명자 / 주소	Street Robert A. (Palo Alto CA) Kaplan Selig N. (El Cerrito CA) Perez-Mendez Victor (Berkeley CA)
출원인 / 주소	The Regents of the University of California (Oakland CA 02)
인용정보	피인용 횟수 : 66 인용 특허 : 0

초록 ▼

A radiation detector employing amorphous Si:H cells in an array with each detector cell having at least three contiguous layers (n type, intrinsic, p type), positioned between two electrodes to which a bias voltage is applied. An energy conversion layer atop the silicon cells intercepts incident radiation and converts radiation energy to light energy of a wavelength to which the silicon cells are responsive. A read-out device, positioned proximate to each detector element in an array allows each such element to be interrogated independently to determine whether radiation has been detected in that cell. The energy conversion material may be a layer of luminescent material having a columnar structure. In one embodiment a column of luminescent material detects the passage therethrough of radiation to be detected and directs a light beam signal to an adjacent a-Si:H film so that detection may be confined to one or more such cells in the array. One or both electrodes may have a comb structure, and the teeth of each electrode comb may be interdigitated for capacitance reduction. The amorphous Si:H film may be replaced by an amorphous Si:Ge:H film in which up to 40 percent of the amorphous material is Ge. Two dimensional arrays may be used in X-ray imaging, CT scanning, crystallography, high energy physics beam tracking, nuclear medicine cameras and autoradiography.

대표청구항 ▼

Detector elements in an array of such elements for high energy particles or photons that move through the detector, with each detector element comprising: first and second electrodes lying in approximately parallel planes and being spaced apart from each other; an amorphous film including a mixture of at least 60 percent Si:H and at most 40 percent Ge:H, deposited approximately in a plane positioned between and adjacent to the first and second electrodes, the film having at least three contiguous regions, a first region of first electrical conductivity type adjacent to the first electrode, a second region of second electrical conductivity type opposite to the first conductivity type adjacent to the second electrode, and an intrinsic region positioned between the first and second regions where the first and second regions have smaller thickness than the thickness of the intrinsic region; bias means, electrically connected to the first and second electrodes, for impressing an electrical field between the first and second electrodes; and readout means, positioned adjacent to the first and second electrodes and electrically connected thereto, for selectively reading the voltage or current developed across the amorphous film.

이 특허를 인용한 특허 (66)

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IPC	Description
A	생활필수품
A62	인명구조; 소방(사다리 E06C)
A62B	인명구조용의 기구, 장치 또는 방법(특히 의료용에 사용되는 밸브 A61M 39/00; 특히 물에서 쓰이는 인명구조 장치 또는 방법 B63C 9/00; 잠수장비 B63C 11/00; 특히 항공기에 쓰는 것, 예. 낙하산, 투출좌석 B64D; 특히 광산에서 쓰이는 구조장치 E21F 11/00)
A62B-1/08	.. 윈치 또는 풀리에 제동기구가 있는 것

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연합인증

High resolution amorphous silicon radiation detectors 원문보기

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High resolution amorphous silicon radiation detectors 원문보기

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