초록 ▼

A power MOS transistor and a current sensing MOS transistor have a common drain electrode connected to a load. The gates of these MOS transistors are commonly controlled in response to an input control signal. A load current sensing resistor element is connected between the source electrodes of thes

A power MOS transistor and a current sensing MOS transistor have a common drain electrode connected to a load. The gates of these MOS transistors are commonly controlled in response to an input control signal. A load current sensing resistor element is connected between the source electrodes of these transistors. A voltage signal sensed by the load sensing resistor element is amplified by a differential amplifier constituted by a pair of depletion type MOS transistors. The amplified output controls the MOS transistors, and the MOS transistors variably control a voltage of the input control signal to be supplied to the power and current sensing MOS transistors. The power MOS transistor, the current sensing MOS transistor, the depletion MOS transistor, the current control MOS transistor, and the like have the same conductivity type.

대표청구항 ▼

A power semiconductor apparatus comprising: a control element comprising a first insulated gate type transistor ON/OFF-controlled in response to an input control signal; a load sensing resistor element for generating a voltage signal corresponding to an amount of current to be supplied to said contr

A power semiconductor apparatus comprising: a control element comprising a first insulated gate type transistor ON/OFF-controlled in response to an input control signal; a load sensing resistor element for generating a voltage signal corresponding to an amount of current to be supplied to said control element; a differential amplifier constituted by a pair of depletion type MOS transistors, for constituting an input stage of a control amplifier, said control amplifier including said differential amplifier being formed together with said control element on a single semiconductor chip; current amount limiting means for controlling said control element in response to an output signal from said control amplifier including said differential amplifier to control the amount of current supplied to a load through said control element; and a second insulated gate type transistor including a drain and a gate respectively connected to a drain and a gate of said first insulated gate type transistor constituting said control element to connect said load to a common drain electrode, said second insulated gate type transistor constituting a current sensing circuit together with said first insulated gate type transistor, said second insulated gate type transistor constituting a load current sensing circuit upon connection of said load current sensing resistor element between source electrodes of said first and second insulated gate type transistors, said first and second insulating gate type transistors and said pair of depletion type MOS transistors each being of a same conductivity type.