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method of powering corona discharge in ozone generators 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • C01B-013/10
출원번호 US-0538205 (1990-06-14)
발명자 / 주소
  • Conrad Richard H. (950 Idylberry Rd. San Rafael CA 94903)
인용정보 피인용 횟수 : 53  인용 특허 : 0

초록

A method of supplying electrical power to and controlling corona discharge cells used for the generation of ozone employs a single-cycle discontinuous waveform which is characterized by a fixed pulse width and a variable repetition rate. Discrete bipolar pulses are composed of a pair of unipolar pul

대표청구항

A method of powering corona discharge in ozone generators having a power supply including a high-voltage transformer, and having a corona discharge cell, said method comprising the steps of: providing said corona discharge cell with a single-cycle waveform input including bipolar pulses each compris

이 특허를 인용한 특허 (53)

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  2. Oosterlaken, Theodorus; de Ridder, Chris; Jdira, Lucian, Apparatus and method for manufacturing a semiconductor device.
  3. Han, Seung Hee; Lee, Yeon Hee; Ha, Gyu Jin; Jung, In Bae; Kim, Jang Seop, Apparatus for generating ozone in high concentration.
  4. Hogarth,Derek J.; Fu,Jun, Apparatus for ozone production, employing line and grooved electrodes.
  5. den Hartog Besselink, Edwin; Garssen, Adriaan; Dirkmaat, Marco, Cassette holder assembly for a substrate cassette and holding member for use in such assembly.
  6. Burrows, John Antony, Concurrent method for resonant frequency detection in corona ignition systems.
  7. Raisanen, Petri; Shero, Eric; Haukka, Suvi; Milligan, Robert Brennan; Givens, Michael Eugene, Deposition of metal borides.
  8. Zhu, Chiyu; Shrestha, Kiran; Haukka, Suvi, Deposition of metal borides.
  9. Milligan, Robert Brennan, Formation of boron-doped titanium metal films with high work function.
  10. Chen,Xing; Holber,William M.; Cowe,Andrew Barnett; Georgelis,Eric; Bystyak,Ilya M.; Bortkiewicz,Andrzej, Inductively-coupled torodial plasma source.
  11. Chen, Xing; Holber, William M.; Cowe, Andrew Barnett; Georgelis, Eric; Bystyak, Ilya M.; Bortkiewicz, Andrzej, Inductively-coupled toroidal plasma source.
  12. Smith, Donald K.; Chen, Xing; Holber, William M.; Georgelis, Eric, Inductively-coupled toroidal plasma source.
  13. Chen, Xing; Smith, Donald K.; Holber, William M., Integrated plasma chamber and inductively-coupled toroidal plasma source.
  14. Pore, Viljami, Method and apparatus for filling a gap.
  15. Pore, Viljami; Knaepen, Werner; Jongbloed, Bert; Pierreux, Dieter; Van Aerde, Steven R. A.; Haukka, Suvi; Fukuzawa, Atsuki; Fukuda, Hideaki, Method and apparatus for filling a gap.
  16. Pore, Viljami; Knaepen, Werner; Jongbloed, Bert; Pierreux, Dieter; Van Der Star, Gido; Suzuki, Toshiya, Method and apparatus for filling a gap.
  17. Holber, William M.; Smith, John A.; Chen, Xing; Smith, Donald K., Method and apparatus for processing metal bearing gases.
  18. Holber, William M.; Smith, John A.; Chen, Xing; Smith, Donald K., Method and apparatus for processing metal bearing gases.
  19. Holber, William M.; Smith, John A.; Chen, Xing; Smith, Donald K., Method and apparatus for processing metal bearing gases.
  20. Jung, Sung-Hoon; Raisanen, Petri; Liu, Eric Jen Cheng; Schmotzer, Mike, Method and system to reduce outgassing in a reaction chamber.
  21. Winkler, Jereld Lee, Method and systems for in-situ formation of intermediate reactive species.
  22. Kang, DongSeok, Method for depositing thin film.
  23. Winkler, Jereld Lee, Method for forming conformal carbon films, structures conformal carbon film, and system of forming same.
  24. Kato, Richika; Nakano, Ryu, Method for protecting layer by forming hydrocarbon-based extremely thin film.
  25. Zaitsu, Masaru; Kobayashi, Nobuyoshi; Kobayashi, Akiko; Hori, Masaru; Kondo, Hiroki; Tsutsumi, Takayoshi, Method of cyclic dry etching using etchant film.
  26. Knaepen, Werner; Maes, Jan Willem; Jongbloed, Bert; Kachel, Krzysztof Kamil; Pierreux, Dieter; De Roest, David Kurt, Method of forming a structure on a substrate.
  27. Lee, Choong Man; Yoo, Yong Min; Kim, Young Jae; Chun, Seung Ju; Kim, Sun Ja, Method of forming metal interconnection and method of fabricating semiconductor apparatus using the method.
  28. Chun, Seung Ju; Yoo, Yong Min; Choi, Jong Wan; Kim, Young Jae; Kim, Sun Ja; Lim, Wan Gyu; Min, Yoon Ki; Lee, Hae Jin; Yoo, Tae Hee, Method of processing a substrate and a device manufactured by using the method.
  29. Kohen, David; Profijt, Harald Benjamin, Methods for depositing a doped germanium tin semiconductor and related semiconductor device structures.
  30. Raisanen, Petri; Givens, Michael Eugene, Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structures.
  31. Zhu, Chiyu; Asikainen, Timo; Milligan, Robert Brennan, NbMC layers.
  32. Conrad Wayne Ernest,CAX ; Phillips Richard Stanley,CAX ; Phillips Andrew Richard Henry,CAX ; Bowman Raymond Earl,CAX ; Conrad Helmut Gerhard,CAX, Ozone generator.
  33. Conrad Wayne E. (Hampton CAX) Phillips Richard S. (Courtice CAX) Phillips Andrew R. H. (Oshawa CAX) Bowman Raymond E. (Bowmanville CAX) Conrad Helmut G. (Oshawa CAX), Ozone generator with releasable connector and grounded current collector.
  34. Kim Soo-In,KRX ; Lisin Vladimir Nikolaevich,RUX ; German Bekker,RUX ; Sergei Malivanov,RUX, Plasma generator for generating unipolar plasma.
  35. Soll, Joachim; Zobawa, Klaus; Trinh, Buu Son; Soring, Holger, Plasma generator for radio frequency surgery.
  36. Conrad, Wayne Ernest; Phillips, Richard Stanley; Phillips, Andrew Richard Henry; Conrad, Helmut Gerhard, Process and apparatus for chemical conversion.
  37. Conrad,Wayne Ernest; Phillips,Richard Stanley; Phillips,Andrew Richard Henry; Conrad,Helmut Gerhard, Process and apparatus for chemical conversion.
  38. Wayne Ernest Conrad CA; Richard Stanley Phillips CA; Andrew Richard Henry Phillips CA; Helmut Gerhard Conrad CA, Process and apparatus for chemical conversion.
  39. Conrad Wayne Ernest,CAX ; Phillips Richard Stanley,CAX ; Phillips Andrew Richard Henry,CAX ; Conrad Helmut Gerhard,CAX, Process for breaking chemical bonds.
  40. Margetis, Joe; Tolle, John; Bartlett, Gregory; Bhargava, Nupur, Process for forming a film on a substrate using multi-port injection assemblies.
  41. Alokozai, Fred; Milligan, Robert Brennan, Process gas management for an inductively-coupled plasma deposition reactor.
  42. Scholl Richard A. ; Christie David J., Pulsed direct current power supply configurations for generating plasmas.
  43. Winkler, Jereld Lee, Pulsed remote plasma method and system.
  44. Zhu, Chiyu, Selective film deposition method to form air gaps.
  45. Kim, Young Jae; Choi, Seung Woo; Yoo, Yong Min, Semiconductor device and manufacturing method thereof.
  46. Xie, Qi; de Roest, David; Woodruff, Jacob; Givens, Michael Eugene; Maes, Jan Willem; Blanquart, Timothee, Source/drain performance through conformal solid state doping.
  47. Tolle, John, Structures and devices including germanium-tin films and methods of forming same.
  48. Ui, Akio; Hayashi, Hisataka; Kikutani, Keisuke, Substrate processing apparatus and substrate processing method.
  49. Jeong, Sang Jin; Han, Jeung Hoon; Choi, Young Seok; Park, Ju Hyuk, Susceptor for semiconductor substrate processing apparatus.
  50. Lawson, Keith R.; Givens, Michael E., Systems and methods for dynamic semiconductor process scheduling.
  51. Smith,Donald K.; Chen,Xing; Holber,William M.; Georgelis,Eric, Toroidal low-field reactive gas source.
  52. Shugrue, John Kevin, Variable conductance gas distribution apparatus and method.
  53. Lando, Jean-Louis; Valin-Saunal, Pierre, Voltage-controlled DC link for variable frequency generator excitation.
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