[특허]Electrical contact with diffusion barrier

Electrical contact with diffusion barrier 원문보기

IPC분류정보
국가/구분	United States(US) Patent 등록
국제특허분류(IPC7판)	H01L-021/283 H01L-023/54
출원번호	US-0618490 (1990-11-27)
발명자 / 주소	Grief Malcolm K. (2451 E. Woods End Ct. Boise ID 83706) Doan Trung (1574 Shenandoah Dr. Boise ID 83712)
인용정보	피인용 횟수 : 33 인용 특허 : 0

초록 ▼

A device is provided by forming a diffusion barrier at the interface between a metalized contact and the surface of a semiconductor substrate. A three-layer sandwich is formed over the contact region and then annealed in free nitrogen. The sandwich is made of a titanium nitride layer interposed between layers of titanium. During the anneal, material from the titanium layer adjacent to the substrate migrates thereinto to produce a highly conductive diffusion region of titanium silicide. Concurrently during the anneal the other layer of titanium, which is exposed to the nitrogen atmosphere, is converted into a backing layer of titanium nitride which enhances the barrier effect of the titanium nitride layer at the center of the sandwich structure. The conversion of titanium to titanium nitride causes a physical expansion in the layer involved. This serves to enhance the thickness of the barrier layer at all locations, but of particular significance at the corners of the contact well. A diffusion region of controlled depth and the deposition of minimal amounts of titanium remote from the contact side itself are advantageous results of the disclosed process.

대표청구항 ▼

A diffusion barrier for a semiconductor device to prevent the migration of silicon from the substrate in which the device is formed across an interface between an electrical contact formed in a contact well having a bottom and sides and a portion of the surface of the substrate electrically coupled thereto, said diffusion barrier comprising: (a) a diffusion region of titanium silicide in the portion of the surface of the substrate electrically coupled to the electrical contact; (b) a first composite strata of titanium nitride disposed at the bottom of said well between the surface of said diffusion region and the electrical contact, said composite strata of titanium nitride comprising a first base layer contacting the surface of the substrate and a first backing layer overlying said first base layer and annealed to form said first composite strata; (c) a peripheral layer of titanium formed on the sides of the contact well; and (d) a second composite strata of titanium nitride formed on the sides of said contact well over said peripheral layer of titanium, said second composite strata of titanium nitride comprising a second base layer contacting said peripheral layer of titanium and a second backing layer overlying said second base layer and annealed to form said second composite strata.

이 특허를 인용한 특허 (33)

Doan Trung T. ; Sandhu Gurtej Singh ; Prall Kirk ; Sharan Sujit, Apparatus having titanium silicide and titanium formed by chemical vapor deposition.
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Sandhu Gurtej Singh ; Westmoreland Donald L., Chemical vapor deposition of titanium.
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Sandhu Gurtej Singh ; Westmoreland Donald L., Chemical vapor deposition of titanium.
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Sandhu, Gurtej Singh; Westmoreland, Donald L., Chemical vapor deposition of titanium.
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Sandhu, Gurtej Singh; Westmoreland, Donald L., Chemical vapor deposition of titanium.
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Sandhu, Gurtej Singh; Westmoreland, Donald L., Chemical vapor deposition of titanium.
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Sandhu, Gurtej Singh; Westmoreland, Donald L., Chemical vapor deposition of titanium.
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Sandhu, Gurtej Singh; Westmoreland, Donald L., Chemical vapor deposition of titanium.
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Chung-Shi Liu TW; Shau-Lin Shue TW; Chen-Hua Yu TW, Effective diffusion barrier.
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Chen, Yuanning; Lippitt, III, Maxwell Walthour; Moller, William M., Integrated circuit with metal silicide regions.
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Sandhu,Gurtej Singh; Westmoreland,Donald L., Memory device with chemical vapor deposition of titanium for titanium silicide contacts.
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Chen,Yuanning; Lippitt, III,Maxwell Walthour; Moller,William M., Method for forming metal silicide regions in an integrated circuit.
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Hu Yongjun, Method for making a low resistivity electrode having a near noble metal.
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Yongjun Hu, Method for making a low resistivity electrode having a near noble metal.
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Schuele Paul J. ; Fazan Pierre C., Method of fabricating a contact structure having a composite barrier layer between a platinum layer and a polysilicon plug.
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Schuele, Paul J.; Fazan, Pierre C., Method of fabricating a contact structure having a composite barrier layer between a platinum layer and a polysilicon plug.
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Schuele, Paul J.; Fazan, Pierre C., Method of fabricating a contact structure having a composite barrier layer between a platinum layer and a polysilicon plug.
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Schuele Paul J. ; Fazan Pierre C., Method of fabricating a contract structure having a composite barrier layer between a platinum layer and a polysilicon plug.
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Shinmura Toshiki,JPX, Method of forming an interconnection in a contact hole in an insulation layer over a silicon substrate.
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Doan Trung T. ; Sandhu Gurtej Singh ; Prall Kirk ; Sharan Sujit, Method of forming titanium silicide and titanium by chemical vapor deposition.
상세보기
Trung T. Doan ; Gurtej Singh Sandhu ; Kirk Prall ; Sujit Sharan, Method of forming titanium silicide and titanium by chemical vapor deposition and resulting apparatus.
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Webster Marian N.,NLX ; Dirks Albertus G.,NLX, Method of manufacturing a semiconductor device with a multilayer wiring.
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Dobson Christopher David,GBX, Method of removing surface oxides found on a titanium oxynitride layer using a nitrogen containing plasma.
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Dobson Christopher David,GBX ; Harris Mark Graeme Martin,GBX ; Buchanan Keith Edward,GBX, Methods of forming a barrier layer.
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Doan Trung T. ; Sandhu Gurtej Singh ; Prall Kirk ; Sharan Sujit, Methods of forming a contact having titanium formed by chemical vapor deposition.
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Doan Trung T. ; Sandhu Gurtej Singh ; Prall Kirk ; Sharan Sujit, Methods of forming a contact having titanium silicide and titanium formed by chemical vapor deposition.
상세보기
Doan Trung T. ; Sandhu Gurtej Singh ; Prall Kirk ; Sharan Sujit, Methods of forming a contact having titanium silicide formed by chemical vapor deposition.
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Park,Cheolsoo, Methods of forming metal lines in semiconductor devices.
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Han,Jae Won; Jeon,Dong Ki, Methods of forming metal wiring of semiconductor devices including sintering the wiring layers and forming a via hole with a barrier metal.
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Trung T. Doan, Robust pressure aluminum fill process.
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Harada, Takeshi, Semiconductor device.
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Harada, Takeshi, Semiconductor device having a copper interconnect layer.
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Schuele Paul J. ; Fazan Pierre C., Sputter and CVD deposited titanium nitride barrier layer between a platinum layer and a polysilicon plug.
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IPC	Description
A	생활필수품
A62	인명구조; 소방(사다리 E06C)
A62B	인명구조용의 기구, 장치 또는 방법(특히 의료용에 사용되는 밸브 A61M 39/00; 특히 물에서 쓰이는 인명구조 장치 또는 방법 B63C 9/00; 잠수장비 B63C 11/00; 특히 항공기에 쓰는 것, 예. 낙하산, 투출좌석 B64D; 특히 광산에서 쓰이는 구조장치 E21F 11/00)
A62B-1/08	.. 윈치 또는 풀리에 제동기구가 있는 것

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Electrical contact with diffusion barrier 원문보기

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Electrical contact with diffusion barrier 원문보기

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