[특허]Gas delivery for ion beam deposition and etching

[미국특허] Gas delivery for ion beam deposition and etching 원문보기

IPC분류정보
국가/구분	United States(US) Patent 등록
국제특허분류(IPC7판)	H01J-037/317
출원번호	US-0605601 (1990-10-29)
발명자 / 주소	Kirch Steven J. (Lagrangeville NY) Levin James P. (Jericho VT) Wagner Alfred (Brewster NY)
출원인 / 주소	International Business Machines Corporation (Armonk NY 02)
인용정보	피인용 횟수 : 31 인용 특허 : 0

초록 ▼

An ion beam structure includes a gas container, such as a cylindrical can having first and second apertures through the center of the top and bottom walls respectively of the container such that a narrow ion beam is passed through the apertures and the center axis of the can and onto a target specimen such as a mask or chip or other article of manufacture disposed closely below the bottom of the can. The can may further include deflection means for applying voltages and/or magnetic fields to locations on the can (i.e., top, bottom, sides) to direct secondary charged particles such as electrons emitted from the specimen onto an electron detection means such that the structure functions as an imaging system. The electric and/or magnetic fields may be employed to increase the collection efficiency of the detector and thereby improve the quality of the image by increasing the signal to noise ratio. When the collected image produced by the secondary charged particles indicates that a repair or other modification be performed, a gas is introduced into the can from a gas reservoir via a tube. The gas, which contains first type particles (i.e. gold atom, tungsten atom, etc.) leaves the can via the bottom aperture and is adsorbed onto the nearby target specimen surface. The ion beam, containing second type particles (i.e. gallium ions) passes through the gas with minimum interaction and strikes the target specimen surface to decompose the adsorbed gas and the decomposed first type particles to provide the modification such as repair to the specimen (mask or chip) surface.

대표청구항 ▼

An ion beam structure for specimen imaging and modification comprising: a gas container means disposed over a target specimen, said container means having an upper side with first aperture therein and a lower side with a second aperture therein co-linear with said first aperture, an ion beam generator for generating a focussed ion beam, said beam generator disposed over said gas container means wherein said ion beam passes through said first and second apertures onto said specimen, a gas supply means connected to said container for introducing into said gas container means a gas containing a species to be adsorbed onto said specimen surface, wherein said gas contains said species passes through said second aperture on said lower side of said container means and exits said container in order to be adsorbed onto said specimen surface and wherein said ion beam decomposes said adsorbed gas on said target specimen for deposition at very small local position.

이 특허를 인용한 특허 (31) 인용/피인용 타임라인 분석

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[미국특허] Gas delivery for ion beam deposition and etching 원문보기

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