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Multi-layer address lines for amorphous silicon liquid crystal display devices 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • G02F-001/13
출원번호 US-0442864 (1989-11-29)
발명자 / 주소
  • Whetten Nathan R. (Ballston Lake NY)
출원인 / 주소
  • General Electric Company (Schenectady NY 02)
인용정보 피인용 횟수 : 54  인용 특허 : 0

초록

Each scan line of a liquid crystal display (LCD) includes: a first layer of titanium disposed on the LCD substrate surface to promote adhesion of the scan line to the substratae surface; a layer of molybdenum or aluminum disposed on the first titanium layer to provide a low resistance address line;

대표청구항

An electrically conductive address line for fabrication upon a relatively large insulative substrate surface, comprising: a first layer of an electrically conductive, laser-weldable material disposed on said insulative substrate surface and selected to adhere thereto; and a second layer of an electr

이 특허를 인용한 특허 (54)

  1. Kim Jeong Hyun,KRX ; Hong Chan Hee,KRX, Active matrix LCD having a non-conductive light shield layer.
  2. Kubota Takeshi,JPX ; Hayashi Masami,JPX, Active matrix liquid crystal device including brush-clearable multiple layer electrodes and a method of manufacturing the same.
  3. Weng, Der-Chin, Backlight device.
  4. Weng,Der Chin, Backlight device.
  5. Donald A. Whitehurst ; Dennis D. Mattson ; Paul D. Wyatt ; Charles Ring ; Michael J. Dufresne ; Jose F. Brenes ; Bruce A. Finger ; David R. Zeipelt, Circuit manufacturing using etched tri-metal media.
  6. Jianqiang Liu ; Ching-Yeu Wei ; Robert Forrest Kwasnick, Corrosion resistant imager.
  7. Jianqiang Liu ; Ching-Yeu Wei ; Robert Forrest Kwasnick, Corrosion resistant imager.
  8. Jianqiang Liu ; Ching-Yeu Wei ; Robert Forrest Kwasnick, Corrosion resistant imager.
  9. Liu Jianqiang ; Wei Ching-Yeu ; Kwasnick Robert Forrest, Corrosion resistant imager.
  10. Liu Jianqiang ; Wei Ching-Yeu ; Kwasnick Robert Forrest, Corrosion resistant imager.
  11. Kondo, Toshikazu; Koyama, Jun; Yamazaki, Shunpei, Display device having an oxide semiconductor transistor.
  12. Kondo, Toshikazu; Koyama, Jun; Yamazaki, Shunpei, Display device having an oxide semiconductor transistor.
  13. Zhang,Hongyong; Kusumoto,Naoto, Electro-optical device and thin film transistor and method for forming the same.
  14. Jo,Gyoo Chul, Electronic device having a stacked wiring layer including Al and Ti.
  15. Park,Hong Scik; Kang,Sung Chul, Etchant for wires, a method for manufacturing the wires using the etchant, a thin film transistor array substrate and a method for manufacturing the same including the method.
  16. Donald A. Whitehurst ; Paul D. Wyatt ; Charles Ring ; Michael J. Dufresne ; Jose F. Brenes ; Bruce A. Finger ; Dave R. Zeipelt, Etching of metallic composite articles.
  17. Lai,Han Chung; Liao,Ta Wen, Flat panel display and fabrication method thereof.
  18. Lai,Han Chung; Liao,Ta Wen, Flat panel display and fabrication method thereof.
  19. Donald A. Whitehurst ; Paul D. Wyatt ; Jose F. Brenes ; Jeffrey M. Borning ; Bruce A. Finger, Lamination of circuit sub-elements while assuring registration.
  20. Lee, Gak Seok; Sung, Byoung-Hun; Suh, Duck Jong, Liquid crystal display.
  21. Eguchi, Shingo; Shionoiri, Yutaka, Liquid crystal display device.
  22. Hsiao,Kuan Cheng, Liquid crystal display panel having spacers wedged in three-layered conductive lines and manufacturing method thereof.
  23. Sakamoto Hirokazu (Hyogo JPX) Yokomizo Masayuki (Hyogo JPX) Hayama Masahiro (Hyogo JPX) Matsumoto Takao (Hyogo JPX) Nakagawa Naoki (Hyogo JPX) Ohtani Makoto (Hyogo JPX), Liquid crystal display unit manufacturing method including forming one of two gate line layers of display electrode mate.
  24. Jr-Hong Chen TW; Tinghui Huang TW, Method for fabricating TFT array and devices formed.
  25. Shen Chi-Cheong (Richardson TX) Hodson Lester L. (McKinney TX), Method for fabricating field emission device metallization.
  26. Ting-Hui Huang TW; Jr-Hong Chen TW, Method for fabricating high aperture ratio TFT's and devices formed.
  27. Hwang Kwang Jo,KRX, Method for manufacturing a liquid crystal display device.
  28. Yamazaki, Shunpei; Koyama, Jun, Method for manufacturing an electrooptical device.
  29. Gu Tieer (Troy MI) den Boer Willem (Troy MI), Method of making a TFT having a reduced channel length.
  30. Voutsas Apostolos T. ; Hibino Yoshi, Method of making gate and source lines in TFT LCD panels using pure aluminum metal.
  31. Jo,Gyoo Chul, Method of manufacturing a substrate for an electronic device by using etchant and electronic device having the substrate.
  32. Seiki Masahiro,JPX ; Kubo Akira,JPX, Method of manufacturing thin-film transistors.
  33. Colgan Evan G. ; Fryer Peter M. ; Harper James McKell Edwin ; Rodbell Kenneth P., Multi-layer metal sandwich with taper and reduced etch bias and method for forming same.
  34. Kanetsuki, Norio; Yamamoto, Tatsushi; Hirayama, Masaki; Ohmi, Tadahiro, Plasma processing method.
  35. Hirano Naoto,JPX, Reflective liquid crystal display apparatus with low manufacturing cost.
  36. Hirano Naoto,JPX, Reflective liquid crystal display apparatus with low manufacturing cost.
  37. Fan, Su Chen; Horak, David V.; Ponoth, Shom; Rath, David L.; Sankarapandian, Muthumanickam, Self-aligned contacts.
  38. Yamazaki, Shunpei; Arai, Yasuyuki; Koyama, Jun, Semiconductor device and fabrication method thereof.
  39. Yamazaki, Shunpei; Arai, Yasuyuki; Koyama, Jun, Semiconductor device and fabrication method thereof.
  40. Yamazaki, Shunpei; Arai, Yasuyuki; Koyama, Jun, Semiconductor device and fabrication method thereof.
  41. Yamazaki, Shunpei; Arai, Yasuyuki; Koyama, Jun, Semiconductor device and fabrication method thereof.
  42. Yamazaki, Shunpei; Arai, Yasuyuki; Koyama, Jun, Semiconductor device and fabrication method thereof.
  43. Yamazaki, Shunpei; Arai, Yasuyuki; Koyama, Jun, Semiconductor device comprising a pixel unit including an auxiliary capacitor.
  44. Yamazaki, Shunpei; Koyama, Jun, Semiconductor device having a gate wiring comprising laminated wirings.
  45. Sasaki, Makoto; Chae, Gee Sung, TFT wiring comprising copper layer coated by metal and metal oxide.
  46. Gu Tieer ; Boer Willem den, TFT with reduced channel length and parasitic capacitance.
  47. Shunpei Yamazaki JP, Thin film transister semiconductor devices.
  48. Kim Byeong-Koo,KRX, Thin film transistor array and method of manufacturing thereof.
  49. Kim,Hee Joon, Thin film transistor array panel and manufacturing method thereof.
  50. Yoo,Soon Sung; Cho,Heung Lyul, Thin film transistor array substrate and method of manufacturing the same.
  51. Lee, Jueng-gil; Lee, Jung-ho; Nam, Hyo-rak, Thin film transistor substrate.
  52. Yamazaki, Shunpei; Suzawa, Hideomi; Ono, Koji; Kusuyama, Yoshihiro, Wiring and method of manufacturing the same, and wiring board and method of manufacturing the same.
  53. Yamazaki,Shunpei; Suzawa,Hideomi; Ono,Koji; Kusuyama,Yoshihiro, Wiring and method of manufacturing the same, and wiring board and method of manufacturing the same.
  54. Sasaki, Makoto; Chae, Gee Sung, Wiring, TFT substrate using the same and LCD.
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