[특허]Multi-channel plasma discharge endpoint detection method

[미국특허] Multi-channel plasma discharge endpoint detection method 원문보기

IPC분류정보
국가/구분	United States(US) Patent 등록
국제특허분류(IPC7판)	H01L-021/00
출원번호	US-0528297 (1990-05-24)
발명자 / 주소	Cheng David (San Jose CA)
출원인 / 주소	Applied Materials, Inc. (Santa Clara CA 02)
인용정보	피인용 횟수 : 33 인용 특허 : 0

초록 ▼

A plasma discharge endpoint detection system and method characterized by a plurality of individual data channels which are combined to create a composite function representative of the conditions within a plasma etch chamber. Preferably, a number of the channels are representative of spectral components within the optical spectrum caused by the plasma discharge within the etch chamber. A multi-channel sensor assembly is provided for this purpose including a number of light-guides for guiding light from the plasma discharge to filters and photosensors associated with the multiple channels. Other channels can detect various conditions such as the D.C. bias on a cathode within the plasma etch chamber. The various channels are digitized, weighted and summed within a digital computer to create the composite function from which endpoint and other conditions within the chamber can be determined. The method is characterized by the weighting and summing of a plurality of data channels carrying information about the conditions within a plasma etch chamber to develop a composite function and then analyzing the composite function to determine endpoint and other conditions. The endpoint detection method compares the slope of the composite function to a predetermined maximum slope value and identifies endpoint when the maximum slope value is exceeded a predetermined number of times.

대표청구항 ▼

A method of monitoring a plasma process which comprises (a) optically monitoring a plurality of preselected emission spectra developed by a plasma in a plasma chamber, (b) amplifying and digitizing a plurality of spectra signals of said spectra, (c) weighting and summing said signals to form a composite function, and (d) comparing the slope of the composite function to a predetermined value to determine preselected conditions within said plasma.

이 특허를 인용한 특허 (33) 인용/피인용 타임라인 분석

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Johnson,David; Westerman,Russell, Envelope follower end point detection in time division multiplexed processes.
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Robinett Christopher T., Fitted endpoint system.
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Winniczek, Jaroslaw W., Full spectrum endpoint detection.
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Voisin, Ronald D., Imprint alignment method, system and template.
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Voisin, Ronald D., Imprint alignment method, system, and template.
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Reza Golzarian, Liquid etch endpoint detection and process metrology.
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Oluseyi, Hakeem; Sarfaty, Moshe, Method and apparatus employing optical emission spectroscopy to detect a fault in process conditions of a semiconductor processing system.
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Liu Alexander F., Method and apparatus for detecting optimal endpoints in plasma etch processes.
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Liu Alexander F., Method and apparatus for detecting optimal endpoints in plasma etch processes.
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Blonigan, Wendell T.; Gardner, James T., Method and apparatus for detecting the endpoint of a chamber cleaning.
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Buie, Melisa J.; Poslavsky, Leonid; Lewis, Jennifer, Method and apparatus for measuring etch uniformity of a semiconductor wafer.
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Smith ; Jr. Michael Lane ; Stevenson Joel O'Don ; Ward Pamela Peardon Denise, Method and apparatus for monitoring plasma processing operations.
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Smith ; Jr. Michael Lane ; Stevenson Joel O'Don ; Ward Pamela Peardon Denise, Method and apparatus for monitoring plasma processing operations.
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Smith ; Jr. Michael Lane ; Stevenson Joel O'Don ; Ward Pamela Peardon Denise, Method and apparatus for monitoring plasma processing operations.
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Chen, Charles, Method and apparatus for optical endpoint detection during chemical mechanical polishing.
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Powell, Gary, Method and device utilizing real-time gas sampling.
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Entley,William R.; Langan,John G.; Murali,Amith; Bennett,Kathleen, Method for endpointing CVD chamber cleans following ultra low-k film treatments.
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Edward Alois Reitman, Method for extracting process determinant conditions from a plurality of process signals.
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Sreenivasan, Sidlgata V.; Watts, Michael P. C., Method to arrange features on a substrate to replicate features having minimal dimensional variability.
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Wongsenakhum, Panya; Manohar, Abhishek, Methods and apparatus for cleaning deposition reactors.
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Choi, Byung J.; Colburn, Matthew; Sreenivasan, S. V.; Willson, C. Grant; Bailey, Todd; Ekerdt, John, Methods for high-precision gap and orientation sensing between a transparent template and substrate for imprint lithography.
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Le Minh ; Chen Kuang Han ; Smith Taber H. ; Boning Duane S. ; Sawin Herbert H., Monitor of plasma processes with multivariate statistical analysis of plasma emission spectra.
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Oluseyi, Hakeem; Sarfaty, Moshe, Monitoring of film characteristics during plasma-based semi-conductor processing using optical emission spectroscopy.
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Sui, Zhifeng; Shan, Hongqing; Johansson, Nils; Noorbakhsh, Hamid; Guan, Yu, Monitoring substrate processing using reflected radiation.
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Fang, Zhiyuan; Subramonium, Pramod; Henri, Jon; Fox, Keith, Plasma clean method for deposition chamber.
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Satoh, Kiyoshi; Kano, Yoshinobu, Semiconductor-processing apparatus provided with self-cleaning device.
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Harvey, Kenneth C.; Hosch, Jimmy W.; Gallagher, Neal B.; Wise, Barry M., System and method for determining endpoint in etch processes using partial least squares discriminant analysis in the time domain of optical emission spectra.
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Johnson, Wayne; Parsons, Richard, System and method for monitoring and controlling gas plasma processes.
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Wayne Johnson ; Richard Parsons, System and method for monitoring and controlling gas plasma processes.
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IPC	Description
A	생활필수품
A62	인명구조; 소방(사다리 E06C)
A62B	인명구조용의 기구, 장치 또는 방법(특히 의료용에 사용되는 밸브 A61M 39/00; 특히 물에서 쓰이는 인명구조 장치 또는 방법 B63C 9/00; 잠수장비 B63C 11/00; 특히 항공기에 쓰는 것, 예. 낙하산, 투출좌석 B64D; 특히 광산에서 쓰이는 구조장치 E21F 11/00)
A62B-1/08	.. 윈치 또는 풀리에 제동기구가 있는 것

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[미국특허] Multi-channel plasma discharge endpoint detection method 원문보기