이 특허를 인용한 특허 (134)

1. Ootsuka, Fumio, 3D stacked multilayer semiconductor memory using doped select transistor channel.

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2. Marquardt, David; Shugrue, John, Apparatus and method for calculating a wafer position in a processing chamber under process conditions.

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3. Donohoe Kevin G., Apparatus and method for improving uniformity in batch processing of semiconductor wafers.

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4. Donohoe Kevin G., Apparatus and method for improving uniformity in batch processing of semiconductor wafers.

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5. Oosterlaken, Theodorus; de Ridder, Chris; Jdira, Lucian, Apparatus and method for manufacturing a semiconductor device.

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6. Kamiya, Tatsuo, Apparatus and method for transporting wafers between wafer carrier and process tool under vacuum.

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7. Yokomizo,Kenji, Apparatus and method of securing a workpiece during high-pressure processing.

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8. Yamaga Kenichi (Sagamihara JPX) Kobayashi Toshiki (Zama JPX), Apparatus for heat treating semiconductors at normal pressure and low pressure.

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9. Takao Fujikawa JP; Takahiko Ishii JP; Yutaka Narukawa JP; Makoto Kadoguchi JP, Apparatus for high-temperature and high-pressure treatment.

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10. Biberger, Maximilian Albert; Layman, Frederick Paul; Sutton, Thomas Robert, Apparatus for supercritical processing of a workpiece.

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11. Biberger, Maximilian Albert; Layman, Frederick Paul; Sutton, Thomas Robert, Apparatus for supercritical processing of multiple workpieces.

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12. den Hartog Besselink, Edwin; Garssen, Adriaan; Dirkmaat, Marco, Cassette holder assembly for a substrate cassette and holding member for use in such assembly.

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13. Halpin, Michael; Shero, Eric; White, Carl; Alokozai, Fred; Winkler, Jerry; Dunn, Todd, Chamber sealing member.

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14. Halpin, Michael; Shero, Eric; White, Carl; Alokozai, Fred; Winkler, Jerry; Dunn, Todd, Chamber sealing member.

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15. Kamikawa, Yuji, Cleaning and drying method and apparatus.

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16. Kim, Sang-Shin; Rivera, Manuel Scott; Hong, Suk-Dong, Computer readable medium for high pressure gas annealing.

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17. Zaitsu, Masaru; Fukazawa, Atsuki; Fukuda, Hideaki, Continuous process incorporating atomic layer etching.

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18. Jones,William Dale, Control of fluid flow in the processing of an object with a fluid.

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19. Raisanen, Petri; Shero, Eric; Haukka, Suvi; Milligan, Robert Brennan; Givens, Michael Eugene, Deposition of metal borides.

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20. Zhu, Chiyu; Shrestha, Kiran; Haukka, Suvi, Deposition of metal borides.

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21. Yednak, III, Andrew M.; Dunn, Todd; White, Carl; Manasco, Michael, Deposition valve assembly and method of heating the same.

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22. Milligan, Robert Brennan, Formation of boron-doped titanium metal films with high work function.

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23. Hawkins, Mark; Halleck, Bradley Leonard; Kirschenheiter, Tom; Hossa, Benjamin; Pottebaum, Clay; Miskys, Claudio, Gas distribution system, reactor including the system, and methods of using the same.

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24. Sheydayi,Alexei; Sutton,Thomas, Gate valve for plus-atmospheric pressure semiconductor process vessels.

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25. Yednak, III, Andrew M.; Pettinger, Jr., Frederick L., Heater jacket for a fluid line.

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26. Jones, William D., High pressure fourier transform infrared cell.

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27. Biberger, Maximilian A.; Layman, Frederick Paul; Sutton, Thomas Robert, High pressure processing chamber for semiconductor substrate.

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28. Biberger,Maximilian A.; Layman,Frederick Paul; Sutton,Thomas Robert, High pressure processing chamber for semiconductor substrate.

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29. Jones,William Dale, High-pressure processing chamber for a semiconductor wafer.

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30. Jones,William Dale, High-pressure processing chamber for a semiconductor wafer.

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31. Shugrue, John; Moen, Ron, Lockout tagout for semiconductor vacuum valve.

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32. Jung, Sung-Hoon, Metal oxide protective layer for a semiconductor device.

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33. Jung, Sung-Hoon, Metal oxide protective layer for a semiconductor device.

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34. Sheydayi,Alexei, Method and apparatus for clamping a substrate in a high pressure processing system.

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35. Goshi,Gentaro, Method and apparatus for cooling motor bearings of a high pressure pump.

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36. Brenninger, Georg, Method and apparatus for depositing a layer on a semiconductor wafer by vapor deposition in a process chamber.

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37. Pore, Viljami, Method and apparatus for filling a gap.

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38. Pore, Viljami; Knaepen, Werner; Jongbloed, Bert; Pierreux, Dieter; Van Aerde, Steven R. A.; Haukka, Suvi; Fukuzawa, Atsuki; Fukuda, Hideaki, Method and apparatus for filling a gap.

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39. Pore, Viljami; Knaepen, Werner; Jongbloed, Bert; Pierreux, Dieter; Van Der Star, Gido; Suzuki, Toshiya, Method and apparatus for filling a gap.

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40. Biberger, Maximilian Albert; Layman, Frederick Paul; Sutton, Thomas Robert, Method and apparatus for supercritical processing of multiple workpieces.

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41. Colpo Pascal,FRX ; Rossi Fran.cedilla.ois,ITX ; Daviet Jean-Fran.cedilla.ois,FRX ; Ernst Roland,FRX, Method and apparatus to produce large inductive plasma for plasma processing.

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42. Fujikawa Takao,JPX ; Narukawa Yutaka,JPX ; Masuda Tsuneharu,JPX ; Kadoguchi Makoto,JPX, Method and device for high-temperature, high-pressure treatment of semiconductor wafer.

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43. Parent,Wayne M.; Goshi,Gentaro, Method and system for cooling a pump.

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44. Parent,Wayne M., Method and system for determining flow conditions in a high pressure processing system.

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45. Tolle, John; Hill, Eric; Winkler, Jereld Lee, Method and system for in situ formation of gas-phase compounds.

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46. Parent, Wayne M.; Geshell, Dan R., Method and system for passivating a processing chamber.

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47. Hansen,Brandon; Lowe,Marie, Method and system for treating a substrate with a high pressure fluid using fluorosilicic acid.

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48. Jung, Sung-Hoon; Raisanen, Petri; Liu, Eric Jen Cheng; Schmotzer, Mike, Method and system to reduce outgassing in a reaction chamber.

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49. Jung, Sung-Hoon; Raisanen, Petri; Liu, Eric Jen Cheng; Schmotzer, Mike, Method and system to reduce outgassing in a reaction chamber.

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50. Winkler, Jereld Lee, Method and systems for in-situ formation of intermediate reactive species.

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51. Suemori, Hidemi, Method for depositing dielectric film in trenches by PEALD.

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52. Kang, DongSeok, Method for depositing thin film.

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53. Takamure, Noboru; Okabe, Tatsuhiro, Method for forming Ti-containing film by PEALD using TDMAT or TDEAT.

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54. Ong T. P., Method for forming a dielectric layer using high pressure.

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55. Shiba, Eiichiro, Method for forming aluminum nitride-based film by PEALD.

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56. Winkler, Jereld Lee, Method for forming conformal carbon films, structures conformal carbon film, and system of forming same.

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57. Fukazawa, Atsuki, Method for forming conformal nitrided, oxidized, or carbonized dielectric film by atomic layer deposition.

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58. Fukazawa, Atsuki; Fukuda, Hideaki; Takamure, Noboru; Zaitsu, Masaru, Method for forming dielectric film in trenches by PEALD using H-containing gas.

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59. Kimura, Yosuke; de Roest, David, Method for forming film having low resistance and shallow junction depth.

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60. Gardner Mark I. (Cedar Creek TX) Hause Fred N. (Austin TX) Wristers Derick J. (Austin TX) Kwong Dim-Lee (Austin TX), Method for forming metal silicide on a semiconductor surface with minimal effect on pre-existing implants.

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61. Ishikawa, Dai; Fukazawa, Atsuki, Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches.

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62. Namba, Kunitoshi, Method for forming silicon oxide cap layer for solid state diffusion process.

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63. Kim, Sang-Shin; Rivera, Manuel Scott; Hong, Suk-Dong, Method for high pressure gas annealing.

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64. Donohoe, Kevin G., Method for improving uniformity in batch processing of semiconductor wafers.

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65. Shiba, Eiichiro, Method for performing uniform processing in gas system-sharing multiple reaction chambers.

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66. Yamagishi, Takayuki; Suwada, Masaei; Tanaka, Hiroyuki, Method for positioning wafers in multiple wafer transport.

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67. Kato, Richika; Nakano, Ryu, Method for protecting layer by forming hydrocarbon-based extremely thin film.

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68. Kato, Richika; Okuro, Seiji; Namba, Kunitoshi; Nonaka, Yuya; Nakano, Akinori, Method for protecting layer by forming hydrocarbon-based extremely thin film.

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69. Kawamura,Kohei; Asano,Akira; Miyatani,Koutarou; Hillman,Joseph T.; Palmer,Bentley, Method for supercritical carbon dioxide processing of fluoro-carbon films.

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70. Biberger, Maximilian Albert; Layman, Frederick Paul; Sutton, Thomas Robert, Method for supercritical processing of multiple workpieces.

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71. Haukka, Suvi; Shero, Eric James; Alokozai, Fred; Li, Dong; Winkler, Jereld Lee; Chen, Xichong, Method for treatment of deposition reactor.

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72. Zaitsu, Masaru, Method of atomic layer etching using functional group-containing fluorocarbon.

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73. Zaitsu, Masaru; Kobayashi, Nobuyoshi; Kobayashi, Akiko; Hori, Masaru; Kondo, Hiroki; Tsutsumi, Takayoshi, Method of cyclic dry etching using etchant film.

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74. Knaepen, Werner; Maes, Jan Willem; Jongbloed, Bert; Kachel, Krzysztof Kamil; Pierreux, Dieter; De Roest, David Kurt, Method of forming a structure on a substrate.

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75. Lee, Choong Man; Yoo, Yong Min; Kim, Young Jae; Chun, Seung Ju; Kim, Sun Ja, Method of forming metal interconnection and method of fabricating semiconductor apparatus using the method.

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76. Chun, Seung Ju; Yoo, Yong Min; Choi, Jong Wan; Kim, Young Jae; Kim, Sun Ja; Lim, Wan Gyu; Min, Yoon Ki; Lee, Hae Jin; Yoo, Tae Hee, Method of processing a substrate and a device manufactured by using the method.

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77. Biberger,Maximilian Albert; Layman,Frederick Paul; Sutton,Thomas Robert, Method of supercritical processing of a workpiece.

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78. Kohen, David; Profijt, Harald Benjamin, Methods for depositing a doped germanium tin semiconductor and related semiconductor device structures.

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79. Raisanen, Petri; Givens, Michael Eugene, Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structures.

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80. Tolle, John, Methods of forming films including germanium tin and structures and devices including the films.

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81. Margetis, Joe; Tolle, John, Methods of forming highly p-type doped germanium tin films and structures and devices including the films.

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82. Margetis, Joe; Tolle, John, Methods of forming silicon germanium tin films and structures and devices including the films.

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83. Winkler, Jereld Lee; Shero, Eric James; Alokozai, Fred, Multi-step method and apparatus for etching compounds containing a metal.

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84. Zhu, Chiyu; Asikainen, Timo; Milligan, Robert Brennan, NbMC layers.

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85. Sheydayi,Alexei, Non-contact shuttle valve for flow diversion in high pressure systems.

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86. Milligan, Robert Brennan; Alokozai, Fred, Phase-stabilized thin films, structures and devices including the thin films, and methods of forming same.

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87. Fondurulia, Kyle; Shero, Eric; Verghese, Mohith E.; White, Carl L., Precursor delivery system.

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88. Sheydayi,Alexei, Pressure energized pressure vessel opening and closing device and method of providing therefor.

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89. Pettinger, Fred; White, Carl; Marquardt, Dave; Ibrani, Sokol; Shero, Eric; Dunn, Todd; Fondurulia, Kyle; Halpin, Mike, Process feed management for semiconductor substrate processing.

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90. Pettinger, Fred; White, Carl; Marquardt, Dave; Ibrani, Sokol; Shero, Eric; Dunn, Todd; Fondurulia, Kyle; Halpin, Mike, Process feed management for semiconductor substrate processing.

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91. Wuester,Christopher D., Process flow thermocouple.

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92. Margetis, Joe; Tolle, John; Bartlett, Gregory; Bhargava, Nupur, Process for forming a film on a substrate using multi-port injection assemblies.

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93. Wagner Rudolf,CHX ; Schmitt Jacques,FRX ; Perrin Jerome,FRX, Process for handling workpieces and apparatus therefor.

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94. Rudolf Wagner CH; Jacques Schmitt FR; Jerome Perrin FR, Process for vacuum treating workpieces, and corresponding process equipment.

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95. Alokozai, Fred; Milligan, Robert Brennan, Process gas management for an inductively-coupled plasma deposition reactor.

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96. Alokozai, Fred; Milligan, Robert Brennan, Process gas management for an inductively-coupled plasma deposition reactor.

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97. Alokozai, Fred; Milligan, Robert Brennan, Process gas management for an inductively-coupled plasma deposition reactor.

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98. Wagner, Rudolf; Schmitt, Jacques; Perrin, Jerome, Processes for vacuum treating workpieces, and corresponding process equipment.

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99. Winkler, Jereld Lee, Pulsed remote plasma method and system.

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100. Shero, Eric; Halpin, Michael; Winkler, Jerry, Radiation shielding for a substrate holder.

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101. Guhman Glenn F. (Chittenden VT) Joshi Madhukar L. (Chittenden VT), Reaction chamber having in situ oxygen generation.

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102. Mullee, William H., Removal of photoresist and photoresist residue from semiconductors using supercritical carbon dioxide process.

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103. Zhu, Chiyu, Selective film deposition method to form air gaps.

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104. Kim, Young Jae; Choi, Seung Woo; Yoo, Yong Min, Semiconductor device and manufacturing method thereof.

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105. Raisanen, Petri; Givens, Michael; Verghese, Mohith, Semiconductor device dielectric interface layer.

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106. Shero, Eric; Verghese, Mohith E.; White, Carl L.; Terhorst, Herbert; Maurice, Dan, Semiconductor processing reactor and components thereof.

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107. Milligan, Robert Brennan; Alokozai, Fred, Semiconductor reaction chamber with plasma capabilities.

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108. Milligan, Robert Brennan; Alokozai, Fred, Semiconductor reaction chamber with plasma capabilities.

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109. Xie, Qi; Machkaoutsan, Vladimir; Maes, Jan Willem, Semiconductor structure and device and methods of forming same using selective epitaxial process.

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110. Arai, Izumi, Single-and dual-chamber module-attachable wafer-handling chamber.

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111. Xie, Qi; de Roest, David; Woodruff, Jacob; Givens, Michael Eugene; Maes, Jan Willem; Blanquart, Timothee, Source/drain performance through conformal solid state doping.

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112. Weeks, Keith Doran, Structures and devices including a tensile-stressed silicon arsenic layer and methods of forming same.

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113. Tolle, John, Structures and devices including germanium-tin films and methods of forming same.

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114. Heiko D Moritz ; Jonathan A. Talbott ; Mohan Chandra ; James A. Tseronis ; Ijaz Jafri, Supercritical fluid drying system and method of use.

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115. Jeong, Sang Jin; Han, Jeung Hoon; Choi, Young Seok; Park, Ju Hyuk, Susceptor for semiconductor substrate processing apparatus.

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116. Dunn, Todd; Alokozai, Fred; Winkler, Jerry; Halpin, Michael, Susceptor heater and method of heating a substrate.

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117. Dunn, Todd; Alokozai, Fred; Winkler, Jerry; Halpin, Michael, Susceptor heater and method of heating a substrate.

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118. Dunn, Todd; White, Carl; Halpin, Michael; Shero, Eric; Winkler, Jerry, Susceptor heater shim.

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119. Tang, Fu; Givens, Michael Eugene; Xie, Qi; Raisanen, Petri, System and method for gas-phase sulfur passivation of a semiconductor surface.

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120. Gale,Glenn; Hillman,Joseph T.; Jacobson,Gunilla; Palmer,Bentley, System and method for processing a substrate using supercritical carbon dioxide processing.

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121. Johnsgard Kristian E. ; Mattson Brad S. ; McDiarmid James ; Zeitlin Vladimir J., System and method for thermal processing of a semiconductor substrate.

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122. Kristian E. Johnsgard ; Brad S. Mattson ; James McDiarmid ; Vladimir J. Zeitlin, System and method for thermal processing of a semiconductor substrate.

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123. Lawson, Keith R.; Givens, Michael E., Systems and methods for dynamic semiconductor process scheduling.

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124. Sarin, Michael Christopher; Mendez, Rafael; Bartlett, Gregory M.; Hill, Eric; Lawson, Keith R.; Rosser, Andy, Systems and methods for mass flow controller verification.

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125. Shero, Eric J.; Raisanen, Petri I.; Jung, Sung-Hoon; Wang, Chang-Gong, Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species.

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126. Shero, Eric; Raisanen, Petri I.; Jung, Sung Hoon; Wang, Chang-Gong, Systems and methods for thin-film deposition of metal oxides using excited nitrogen—oxygen species.

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127. Arena, Chantal; Werkhoven, Christiaan J.; Bertram, Jr., Ronald Thomas; Lindow, Ed, Thermalization of gaseous precursors in CVD reactors.

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128. Arena, Chantal; Werkhoven, Christiaan J.; Bertram, Jr., Ronald Thomas; Lindow, Ed, Thermalization of gaseous precursors in CVD reactors.

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129. Jacobson,Gunilla; Yellowaga,Deborah, Treatment of a dielectric layer using supercritical CO.

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130. Kevwitch, Robert, Treatment of substrate using functionalizing agent in supercritical carbon dioxide.

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131. Sheydayi,Alexei, Vacuum chuck utilizing sintered material and method of providing thereof.

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132. Coomer, Stephen Dale, Variable adjustment for precise matching of multiple chamber cavity housings.

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133. Shugrue, John Kevin, Variable conductance gas distribution apparatus and method.

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134. Schmotzer, Michael; Whaley, Shawn, Variable gap hard stop design.

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