[특허]Crystal growth apparatus and process

Crystal growth apparatus and process 원문보기

IPC분류정보
국가/구분	United States(US) Patent 등록
국제특허분류(IPC7판)	C30B-011/00
출원번호	US-0665468 (1991-03-06)
발명자 / 주소	Young Morris S. S. (Danville CA) Zhang Shanxiang (Santa Clara CA)
출원인 / 주소	Bestal Corporation (Dublin CA 02)
인용정보	피인용 횟수 : 41 인용 특허 : 0

초록

A circular crucible for use in VGF and VB methods of crystal growth includes: a seed well, a first transition region, a first stable growth region, a second transition region, and a major growth region.

대표청구항 ▼

A method of growing single crystal structures in circular crucibles in VGF and VB processes comprising the following steps: growing a crystal form a small diameter seed crystal to an intermediate larger diameter in a first transition region of growth; growing the crystal in length at said intermediate diameter in an essentially stable growth region. growing the crystal from said intermediate diameter to a substantially larger target end product diameter in a second transition region of growth; growing the crystal to a target end product length in a stable major growth region. A circular crucible for growing single crystal structures having a target diameter for use in VGF and VB methods of crystal growth comprising: at least first and second circular transition growth regions; said transition growth regions each comprising a truncated cone comprising a small open end and a large open end; the diameter of the large open end of said second transition region corresponding to said target diameter; a tubular seed well closed on one end and open on the other end, said open end of said seed well being mechanically aligned with and attached to the small open end of said first transition region; the diameters of said large open end of said first transition region and of the small open end of said second transition being equal to one and another and having a value substantially smaller than said target diameter; at least one stable tubular intermediate sized growth region open on both ends; one end of said intermediate sized growth region being mechanically aligned with and attached to said large open end of said first transition region; and the other end of said intermediate sized growth region being mechanically aligned with and connected to said small end of said second transition region; and a terminal tubular major growth region being mechanically aligned with and connected to said large open end of said second transition growth region.

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IPC	Description
A	생활필수품
A62	인명구조; 소방(사다리 E06C)
A62B	인명구조용의 기구, 장치 또는 방법(특히 의료용에 사용되는 밸브 A61M 39/00; 특히 물에서 쓰이는 인명구조 장치 또는 방법 B63C 9/00; 잠수장비 B63C 11/00; 특히 항공기에 쓰는 것, 예. 낙하산, 투출좌석 B64D; 특히 광산에서 쓰이는 구조장치 E21F 11/00)
A62B-1/08	.. 윈치 또는 풀리에 제동기구가 있는 것

내보내기 구분	파일저장 인쇄 메일전송
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메일정보	받는사람 (필수) @ 보내는사람 (선택) @ 제목 내용 KISTI 검색결과 이메일 서비스
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Crystal growth apparatus and process 원문보기

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Crystal growth apparatus and process 원문보기

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이 특허를 인용한 특허 (41)

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