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The method for providing a cleaned doped polycrystalline silicon surface involves providing a polycrystalline silicon body. The body is uniformly doped with a phosphorous impurity from a phosphorous vapor source, such as phosphorous pentoxide. The silicon oxide surface layer is removed from the dope

The method for providing a cleaned doped polycrystalline silicon surface involves providing a polycrystalline silicon body. The body is uniformly doped with a phosphorous impurity from a phosphorous vapor source, such as phosphorous pentoxide. The silicon oxide surface layer is removed from the doped polycrystalline silicon surface formed during the doping with a hydrofluoric acid solution. An important cleaning step of the doped polycrystalline silicon surface is now accomplished with a basic solution of hydrogen peroxide. The highly dense integrated circuit device process can now proceed with any desired patterning of the polycrystalline body or layer without the yield problems of the past.

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Method for forming a high yielding anisotropically patterned thermally doped polycrystalline silicon surface comprising: providing a polycrystalline silicon body; doping said body by a thermal diffusion process uniformly with a phosphorous impurity from a phosphorous pentoxide vapor source; wherein

Method for forming a high yielding anisotropically patterned thermally doped polycrystalline silicon surface comprising: providing a polycrystalline silicon body; doping said body by a thermal diffusion process uniformly with a phosphorous impurity from a phosphorous pentoxide vapor source; wherein said doping forms a thin phosphorus silicon oxide layer on said surface of said polycrystalline silicon: removing said silicon oxide surface layer from said doped polycrystalline silicon surface formed during said doping with a hydrofluoric acid solution; cleaning said doped polycrystalline silicon surface with a basic solution of hydrogen peroxide; and patterning said polycrystalline silicon layer by lithography and anisotropic etching with a reactive ion etching gas.