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Method for controlling a semiconductor (CMP) process by measuring a surface temperature and developing a thermal image o 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-021/66
출원번호 US-0817474 (1992-01-03)
발명자 / 주소
  • Sandhu Gurtej S. (Boise) Doan Trung T. (Boise ID)
출원인 / 주소
  • Micron Technology, Inc. (Boise ID 02)
인용정보 피인용 횟수 : 263  인용 특허 : 0

초록 ▼

A method and apparatus for controlling a chemical mechanical planarization (CMP) process in semiconductor manufacture includes an infrared camera for detecting and mapping a temperature of the wafer for developing a thermal image of the wafer. The thermal image can then be analyzed and used to contr

대표청구항 ▼

A method for controlling a chemical mechanical planarization (CMP) process for a semiconductor wafer comprising: detecting and mapping temperatures of the wafer during the (CMP) process to develop an infrared image of the wafer in real time; controlling process parameters of the (CMP) process using

이 특허를 인용한 특허 (263)

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