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Cleaning process for removal of deposits from the susceptor of a chemical vapor deposition apparatus 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • B08B-003/00
출원번호 US-0894180 (1992-06-03)
발명자 / 주소
  • Chang Mei (Cupertino CA)
출원인 / 주소
  • Applied Materials, Inc. (Santa Clara CA 02)
인용정보 피인용 횟수 : 57  인용 특허 : 0

초록 ▼

An improved process is disclosed for the removal of deposits such as tungsten or tungsten silicide from a susceptor in a vacuum deposition chamber without leaving fluorine residues by first flowing a gaseous source of fluorine into a vacuum deposition chamber and igniting a plasma in the chamber whi

대표청구항 ▼

An improved process for removing deposits of tungsten and/or tungsten silicide from a vacuum deposition chamber after processing of a semiconductor wafer therein which comprises: (a) flowing into said vacuum deposition chamber a gaseous source of fluorine capable of reacting with said deposits of tu

이 특허를 인용한 특허 (57)

  1. Shamouil Shamouilian ; Mehran Moalem ; Tony S. Kaushal, Abatement of fluorine gas from effluent.
    상세보기
  2. Shamouilian, Shamouil; Kaushal, Tony S., Abatement of hazardous gases in effluent.
    상세보기
  3. Ferron, Shawn; Kelly, John; Vermeulen, Robbert, Apparatus and method for controlled combustion of gaseous pollutants.
    상세보기
  4. Trussell David ; Koemtzopoulos C. Robert ; Kozakevich Felix, Chemical vapor deposition system with a plasma chamber having separate process gas and cleaning gas injection ports.
    상세보기
  5. Trussell, David; Koemtzopoulos, C. Robert; Kozakevich, Felix, Chemical vapor deposition system with a plasma chamber having separate process gas and cleaning gas injection ports.
    상세보기
  6. Lau, Wesley George, Cleaning process residues from substrate processing chamber components.
    상세보기
  7. Collins, Alan W.; Gao, Feng; Ishikawa, Tetsuya; Krishnaraj, Padmanaban; Wang, Yaxin, Cleaning residues from surfaces in a chamber by sputtering sacrificial substrates.
    상세보기
  8. Anand Vasudev ; Toshio Itoh ; Ramamujapuram A. Srinivas ; Frederick Wu ; Li Wu ; Brian Boyle ; Mei Chang, Computer readable medium for controlling a method of cleaning a process chamber.
    상세보기
  9. Dalton,Timothy J.; Fuller,Nicholas C. M.; Kumar,Kaushik A.; Labelle,Catherine, De-fluorination of wafer surface and related structure.
    상세보기
  10. Ye Yan (Campbell CA) Rhoades Charles Steven (Los Gatos CA) Yin Gerald Z. (Cupertino CA), Dry cleaning of semiconductor processing chambers.
    상세보기
  11. Goto, Haruhiro Harry; Harshbarger, William R.; Shang, Quanyuan; Law, Kam S., Fluorine process for cleaning semiconductor process chamber.
    상세보기
  12. Seamons Martin ; Ching Cary ; Imaoka Kou,JPX ; Sato Tatsuya,JPX ; Ravi Tirunelveli S. ; Triplett Michael C., Gas chemistry for improved in-situ cleaning of residue for a CVD apparatus.
    상세보기
  13. Entley, William R.; Langan, John G.; Hall, Randy, In situ plasma process to remove fluorine residues from the interior surfaces of a CVD reactor.
    상세보기
  14. Lo Chi-Hsin,CNX ; Cheu Hsing-Yuan,CNX, In-sit chamber cleaning method.
    상세보기
  15. Watatani Hirofumi (Kawasaki JPX) Doki Masahiko (Kawasaki JPX) Okuda Shoji (Kasugai JPX) Nakahira Junya (Kawasaki JPX) Kikuchi Hideaki (Kawasaki JPX), In-situ cleaning of plasma treatment chamber.
    상세보기
  16. Yamazaki Shunpei,JPX, Layer member forming method.
    상세보기
  17. Yamazaki,Shunpei, Layer member forming method.
    상세보기
  18. Xia Li-Qun ; Sivaramakrishnan Visweswaren ; Nemani Srinivas ; Yieh Ellie ; Fong Gary, Method and apparatus for gettering fluorine from chamber material surfaces.
    상세보기
  19. Khurana Nitin ; Burkhart Vince ; Sansoni Steve ; Parkhe Vijay ; Tzou Eugene, Method and apparatus for sputter etch conditioning a ceramic body.
    상세보기
  20. Vasudev Anand ; Itoh Toshio ; Srinivas Ramanujapuram A. ; Wu Frederick ; Wu Li ; Boyle Brian ; Chang Mei, Method for cleaning a process chamber.
    상세보기
  21. Zheng, Yi; Singh, Vinita; Nemani, Srinivas D.; Chen, Chen-An; Lee, Ju-Hyung; Venkataraman, Shankar, Method for cleaning a process chamber.
    상세보기
  22. Yu-Chang Chow TW; W. H. Cheng TW; Chia-Fu Yeh TW; C. M. Chi TW; Cobby Lee TW, Method for cleaning interior of etching chamber.
    상세보기
  23. Nakamura, Hiroshi; Iijima, Kiyohito, Method for cleaning substrate processing apparatus, substrate processing apparatus, program and recording medium having program recorded therein.
    상세보기
  24. Layadi, Nace; Merchant, Sailesh Mansinh; Molloy, Simon John, Method for cleaning tungsten from deposition wall chambers.
    상세보기
  25. Hines Cynthia Marie ; Pinto James Nicholas, Method for deposition tool cleaning.
    상세보기
  26. Liaw Yung-Haw,TWX ; Chu May-Ling,TWX, Method for enhancing sheet resistance uniformity of chemical vapor deposited (CVD) tungsten silicide layers.
    상세보기
  27. Barnes,Michael; Nguyen,Huong Thanh, Method for performing fluorocarbon chamber cleaning to eliminate fluorine memory effect.
    상세보기
  28. Buley Todd W. (Boise ID) Sandhu Gurtej S. (Boise ID), Method of chamber cleaning in MOCVD application.
    상세보기
  29. Comita Paul B. ; Forstner Hali J. L. ; Ranganathan Rekha, Method of cleaning CVD cold-wall chamber and exhaust lines.
    상세보기
  30. Brett C. Richardson ; Duane Outka, Method of cleaning and conditioning plasma reaction chamber.
    상세보기
  31. Demos, Alex; Shufflebotham, Paul Kevin; Barnes, Michael; Nguyen, Huong; McMillin, Brian; Ben-Dor, Monique, Method of depositing a silicon containing layer on a semiconductor substrate.
    상세보기
  32. Denison Dean ; Harshbarger William ; Husain Anwar ; Koemtzopoulos C. Robert ; Kozakevich Felix ; Trussell David, Method of in-situ cleaning of a chuck within a plasma chamber.
    상세보기
  33. Lee Chii-Chang, Method of manufacturing a semiconductor device with improved control of deposition layer thickness.
    상세보기
  34. Outka, Duane; Kim, Yousun; Chen, Anthony; Daugherty, John, Method of reducing aluminum fluoride deposits in plasma etch reactor.
    상세보기
  35. Smith,Bradley C.; James,David, Method of removing PECVD residues of fluorinated plasma using in-situ Hplasma.
    상세보기
  36. Li-Qun Xia ; Visweswaren Sivaramakrishnan ; Srinivas Nemani ; Ellie Yieh ; Gary Fong, Methods and apparatus for gettering fluorine from chamber material surfaces.
    상세보기
  37. Clark, Daniel O.; Raoux, Sebastien; Vermeulen, Robert M.; Crawford, Shaun W., Methods and apparatus for sensing characteristics of the contents of a process abatement reactor.
    상세보기
  38. Ghanayem Steve ; Kori Moris ; Mahajani Maitreyee ; Rajagopalan Ravi, Non-plasma halogenated gas flow prevent metal residues.
    상세보기
  39. Ghanayem Steve ; Kori Moris ; Mahajani Maitreyee ; Rajagopalan Ravi, Non-plasma halogenated gas flow to prevent metal residues.
    상세보기
  40. Shang, Quanyuan; Yadav, Sanjay; Harshbarger, William R.; Law, Kam S., On-site cleaning gas generation for process chamber cleaning.
    상세보기
  41. Shang,Quanyuan; Yadav,Sanjay; Harshbarger,William R.; Law,Kam S., On-site cleaning gas generation for process chamber cleaning.
    상세보기
  42. Kohno, Masayuki; Nishita, Tatsuo; Nakanishi, Toshio, Plasma cleaning method and plasma CVD method.
    상세보기
  43. Ye Yan (Campbell CA) Rhoades Charles Steven (Los Gatos CA) Yin Gerald Z. (Cupertino CA), Plasma dry cleaning of semiconductor processing chambers.
    상세보기
  44. Yamazaki, Shunpei, Plasma processing apparatus.
    상세보기
  45. Leung Cissy S. ; Lei Lawrence Chung-Lai ; Somekh Sasson, Plasma-inert cover and plasma cleaning process and apparatus employing same.
    상세보기
  46. Telford Susan Weiher,DEX ; Aruga Michio,JPX ; Chang Mei, Preconditioning process for treating deposition chamber prior to deposition of tungsten silicide coating on active substrates therein.
    상세보기
  47. Koemtzopoulos C. Robert ; Kozakevich Felix, Process for precoating plasma CVD reactors.
    상세보기
  48. Mizuno Shigeru,JPX ; Yoshimura Takanori,JPX ; Katsumata Yoshihiro,JPX ; Takahashi Nobuyoki,JPX, Process for preventing deposition on inner surfaces of CVD reactor.
    상세보기
  49. Hidenori Kawata ; Asad Haider, Process for using a high nitrogen concentration plasma for fluorine removal from a reactor.
    상세보기
  50. Chiu, Ho-Man Rodney; Clark, Daniel O.; Crawford, Shaun W.; Jung, Jay J.; Todd, Leonard B.; Vermeulen, Robbert, Reactor design to reduce particle deposition during process abatement.
    상세보기
  51. Brownfield, Terri J.; Halderman, Jonathan D., Removing flux residue from reflow furnace using active gaseous solvent.
    상세보기
  52. Ray Mark A. ; McGuire Gary E., Selective plasma deposition.
    상세보기
  53. Shen, Meihua; Jiang, Wei-nan; Yauw, Oranna; Chinn, Jeffrey, Self-cleaning process for etching silicon-containing material.
    상세보기
  54. Chin, Kyoung-Hwan; Kim, Kyoung-In; Jung, Hak-Su; An, Kyoung-Min, Semiconductor device fabrication equipment for performing PEOX process and method including cleaning the equipment with remotely produced plasma.
    상세보기
  55. Gerald Zheyao Yin ; Xue-Yu Qian ; Patrick L. Leahey ; Jonathan D. Mohn ; Waiching Chow ; Arthur Y. Chen ; Zhi-Wen Sun ; Brian K. Hatcher, Treatment of etching chambers using activated cleaning gas.
    상세보기
  56. Shrotriya Ashish V., Two step process for cleaning a substrate processing chamber.
    상세보기
  57. Aitchison, Kenneth Allen, Use of spectroscopic techniques to monitor and control reactant gas input into a pre-pump reactive gas injection system.
    상세보기

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