[특허]Device and method for detecting an end point in polishing operation

Device and method for detecting an end point in polishing operation 원문보기

IPC분류정보
국가/구분	United States(US) Patent 등록
국제특허분류(IPC7판)	H01L-021/00
출원번호	US-0844439 (1992-03-02)
발명자 / 주소	Leach Michael A. (South Burlington VT) Machesney Brian J. (Burlington VT) Nowak Edward J. (Essex Junction VT)
출원인 / 주소	International Business Machines Corporation (Armonk NY 02)
인용정보	피인용 횟수 : 77 인용 특허 : 0

초록 ▼

The present invention relates to a method and apparatus for remotely detecting impedance. It is specifically adapted for use on a polishing machine wherein the end point of polishing for removing a surface layer during the processing of semiconductor substrates is detected. A first, or stationary coil having a high permeability core is wound having an air gap and an AC voltage is applied to the stationary coil to provide a magnetic flux in the air gap. A second coil is mounted for rotation on the polishing table, in a position to periodically pass through the air gap of the stationary coil as the table rotates. The second coil is connected at its opposite ends to contacts which are embedded in the surface of the polishing wheel. The contacts are positioned to engage the surface of the substrate which is being polished and provide a load on the second or rotating coil. The rotating coil, when it is in the air gap of the stationary coil, will perturb the flux field therein as a function of the resistance of the load caused by the contacts contacting either a conducting surface or a non-conducting surface. This perturbance of the flux field is measured as a change in the induced voltage in the stationary coil which in turn is converted to a signal which is processed to indicate the end point of polishing, the end point being when a metallic layer has been removed to expose a dielectric layer therebeneath or, conversely, when a dielectric layer has been removed to expose a metallic layer therebeneath.

대표청구항 ▼

A method of determining the end point of a process for polishing a surface film on a substrate, wherein the surface film is progressively removed to reveal at least a portion of the substrate, comprising the steps of: providing a first circuit including a first core having ends which oppose each other and which are separated by an air gap, a first coil wound around said first core, and a current source connected electrically in parallel across said first coil to energize said first coil and induce a magnetic flux density within said air gap; providing a rotatable platform having a polishing device thereon, said polishing device being disposed to contact the surface of the material being polished, said rotatable platform carrying a second circuit including (i) a second core, (ii) a second coil wound around said second core, and (iii) a pair of electrical contacts connected electrically in parallel across said second coil and positioned so as to contact the surface of the material to be polished; contacting said material to be polished with said polishing device; rotating said platform to polish the material so as to selectively and periodically dispose said second coil within and outside of said air gap, thereby gradually removing the material until said substrate contacts said electrical contacts; sensing the resulting change in said magnetic flux density within said air gap when said substrate contacts said electrical contacts and providing an electrical signal in response thereto; and terminating the polishing process in response to said electrical signal.

이 특허를 인용한 특허 (77)

Labunsky Michael ; Nagengast Andrew ; Pant Anil, Apparatus and method for film thickness measurement integrated into a wafer load/unload unit.
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Birang, Manoocher; Gleason, Allan, Apparatus and method for in-situ endpoint detection for chemical mechanical polishing operations.
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Birang, Manoocher; Gleason, Allan, Apparatus and method for in-situ endpoint detection for chemical mechanical polishing operations.
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Birang, Manoocher; Johansson, Nils; Gleason, Allan, Apparatus and method for in-situ endpoint detection for chemical mechanical polishing operations.
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Birang, Manoocher; Johansson, Nils; Gleason, Allan, Apparatus and method for in-situ endpoint detection for semiconductor processing operations.
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Birang Manoocher ; Pyatigorsky Grigory, Apparatus and method for in-situ monitoring of chemical mechanical polishing operations.
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Nikolenko, Yury; Fauss, Matthew, Apparatus and method of using impedance resonance sensor for thickness measurement.
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Inaba Takao,JPX ; Numoto Minoru,JPX, Apparatus for determining removed amount of wafer.
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Hanawa, Hiroji; Johansson, Nils; Swedek, Bogusla W; Birang, Manoocher, Apparatus for monitoring a metal layer during chemical mechanical polishing using a phase difference signal.
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Leach Michael A. (345 Sheridan #204 Palo Alto CA 94306), Block for polishing a wafer during manufacture of integrated circuits.
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Redeker, Fred C.; Bajaj, Rajeev, Chemical mechanical polishing of a metal layer with polishing rate monitoring.
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Redeker, Fred C.; Bajaj, Rajeev, Chemical mechanical polishing of a metal layer with polishing rate monitoring.
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Johansson, Nils; Swedek, Boguslaw A.; Birang, Manoocher, Combined eddy current sensing and optical monitoring for chemical mechanical polishing.
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Hanawa, Hiroji; Johansson, Nils; Swedek, Boguslaw; Birang, Manoocher, Eddy current sensing of metal removal for chemical mechanical polishing.
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Iravani, Hassan G.; Carlsson, Ingemar; Swedek, Boguslaw A., Eddy current sensor with enhanced edge resolution.
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Miller,G. Laurie; Swedek,Boguslaw A.; Birang,Manoocher, Eddy current system for in-situ profile measurement.
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Miller, G. Laurie; Swedek, Boguslaw A.; Birang, Manoocher, Eddy current system having an elongated core for in-situ profile measurement.
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Yi, Jingang; Xu, Cangshan, End point detection with imaging matching in semiconductor processing.
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Li Leping ; Barbee Steven George ; Lee Eric James ; Martin Francisco A. ; Wei Cong, Endpoint detection in chemical-mechanical polishing of cloisonne structures.
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Nikolenko, Yury, Impedance resonance sensor for real time monitoring of different processes and methods of using same.
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Kesil, Boris; Nikolenko, Yury, Impedance sensing systems and methods for use in measuring constituents in solid and fluid objects.
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Li Leping ; Barbee Steven George ; Halperin Arnold ; Heinz Tony Frederick, In-situ monitoring and control of conductive films by detecting changes in induced eddy currents.
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Tang, Wallace T. Y., In-situ real-time monitoring technique and apparatus for endpoint detection of thin films during chemical/mechanical polishing planarization.
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Tang,Wallace T. Y., In-situ real-time monitoring technique and apparatus for endpoint detection of thin films during chemical/mechanical polishing planarization.
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Swedek, Boguslaw A.; Birang, Manoocher; Johansson, Nils, Integrated endpoint detection system with optical and eddy current monitoring.
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Swedek, Boguslaw A; Birang, Manoocher; Johansson, Nils, Integrated endpoint detection system with optical and eddy current monitoring.
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Swedek,Boguslaw A.; Birang,Manoocher; Johansson,Nils, Integrated endpoint detection system with optical and eddy current monitoring.
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Lustig Naftali Eliahu ; Guthrie William L. ; Sandwick Thomas E., Method and apparatus for in-line oxide thickness determination in chemical-mechanical polishing.
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Jairath Rahul ; Pecen Jiri ; Chadda Saket ; Krusell Wilbur C. ; Cutini Jerauld J. ; Engdahl Erik H., Method and apparatus for in-situ end-point detection and optimization of a chemical-mechanical polishing process using a linear polisher.
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Jairath Rahul ; Pecen Jiri ; Chadda Saket ; Krusell Wilbur C. ; Cutini Jerauld J. ; Engdahl Erik H., Method and apparatus for in-situ end-point detection and optimization of a chemical-mechanical polishing process using a linear polisher.
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Pecen Jiri ; Chadda Saket ; Jairath Rahul ; Krusell Wilbur C., Method and apparatus for in-situ monitoring of thickness during chemical-mechanical polishing.
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Pecen, Jiri; Chadda, Saket; Jairath, Rahul; Krusell, Wilbur C., Method and apparatus for in-situ monitoring of thickness during chemical-mechanical polishing.
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Pecen Jiri ; Fielden John ; Chadda Saket ; LaComb ; Jr. Lloyd J. ; Jairath Rahul ; Krusell Wilbur C., Method and apparatus for in-situ monitoring of thickness using a multi-wavelength spectrometer during chemical-mechanical polishing.
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Hanawa, Hiroji; Johansson, Nils; Swedek, Boguslaw; Birang, Manoocher, Method and apparatus for monitoring a metal layer during chemical mechanical polishing.
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Hanawa,Hiroji; Johansson,Nils; Swedek,Boguslaw; Birang,Manoocher, Method and apparatus for monitoring a metal layer during chemical mechanical polishing.
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Moore, Scott E., Method and apparatus for wireless transfer of chemical-mechanical planarization measurements.
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Moore, Scott E., Method and apparatus for wireless transfer of chemical-mechanical planarization measurements.
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Moore, Scott E., Method and apparatus for wireless transfer of chemical-mechanical planarization measurements.
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Moore, Scott E., Method and apparatus for wireless transfer of chemical-mechanical planarization measurements.
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Birang, Manoocher; Swedek, Boguslaw A.; Kim, Hyeong Cheol, Method and apparatus of eddy current monitoring for chemical mechanical polishing.
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Birang,Manoocher; Swedek,Boguslaw A.; Kim,Hyeong Cheol, Method and apparatus of eddy current monitoring for chemical mechanical polishing.
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Leach Michael A., Method and structure for polishing a wafer during manufacture of integrated circuits.
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Leach Michael A. (345 Sheridan #204 Palo Alto CA 94306), Method and structure for polishing a wafer during manufacture of integrated circuits.
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Birang, Manoocher; Johansson, Nils; Gleason, Allan, Method for in-situ endpoint detection for chemical mechanical polishing operations.
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Hanawa, Hiroji; Johansson, Nils; Swedek, Boguslaw; Birang, Manoocher, Method for monitoring a metal layer during chemical mechanical polishing using a phase difference signal.
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Hanawa,Hiroji; Johansson,Nils; Swedek,Boguslaw; Birang,Manoocher, Monitoring a metal layer during chemical mechanical polishing.
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Nikolenko, Yury, NMR spectroscopy device based on resonance type impedance (IR) sensor and method of NMR spectra acquisition.
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Kimura, Norio; Isobe, Hideji; Shimizu, Kazuo; Osawa, Hiroyuki, Polishing apparatus.
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Kimura, Norio; Isobe, Hideji; Shimizu, Kazuo; Osawa, Hiroyuki, Polishing apparatus.
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Kimura,Norio; Isobe,Hideji; Shimizu,Kazuo; Osawa,Hiroyuki, Polishing apparatus.
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Kodera Masako,JPX ; Yano Hiroyuki ; Shigeta Atsushi,JPX ; Aoki Riichirou,JPX ; Yajima Hiromi,JPX ; Okano Haruo,JPX, Polishing apparatus and method for planarizing layer on a semiconductor wafer.
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Kodera Masako,JPX ; Yano Hiroyuki ; Shigeta Atsushi,JPX ; Aoki Riichirou,JPX ; Yajima Hiromi,JPX ; Okano Haruo,JPX, Polishing apparatus and method for planarizing layer on a semiconductor wafer.
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Birang,Manoocher; Gleason,Allan; Guthrie,William L., Polishing assembly with a window.
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Swedek, Boguslaw A.; Birang, Manoocher, Polishing pad for endpoint detection and related methods.
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Birang, Manoocher; Gleason, Allan, Polishing pad for in-situ endpoint detection.
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Birang,Manoocher; Gleason,Allan; Guthrie,William L., Polishing pad with window and method of fabricating a window in a polishing pad.
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Birang,Manoocher; Swedek,Boguslaw A., Polishing pads useful for endpoint detection in chemical mechanical polishing.
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Pant Anil K. ; Breivogel Joseph R. ; Young Douglas W. ; Jairath Rahul ; Engdahl Erik H., Sensors for a linear polisher.
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Swedek,Boguslaw A.; Birang,Manoocher, Signal improvement in eddy current sensing.
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Birang, Manoocher; Pyatigorsky, Grigory, Substrate polishing metrology using interference signals.
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Birang, Manoocher; Pyatigorsky, Grigory, Substrate polishing metrology using interference signals.
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Birang, Manoocher; Pyatigorsky, Grigory, Substrate polishing metrology using interference signals.
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Birang, Manoocher; Pyatigorsky, Grigory, Substrate polishing metrology using interference signals.
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Swedek, Boguslaw A; Johansson, Nils; Wiswesser, Andreas Norbert; Birang, Manoocher, System and method for in-line metal profile measurement.
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Swedek,Boguslaw A; Johansson,Nils; Wiswesser,Andreas Norbert; Birang,Manoocher, System and method for in-line metal profile measurement.
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Palou-Rivera, Ignasi; Swedek, Boguslaw A.; Karuppiah, Lakshmanan, Wafer edge characterization by successive radius measurements.
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Cote, William J.; Leach, Michael A., Wafer polishing and endpoint detection.
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Bajaj Rajeev ; Litvak Herbert E. ; Surana Rahul K. ; Jew Stephen C. ; Pecen Jiri, Wafer polishing device with movable window.
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Bajaj Rajeev ; Litvak Herbert E. ; Surana Rahul K. ; Jew Stephen C. ; Pecen Jiri, Wafer polishing device with movable window.
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IPC	Description
A	생활필수품
A62	인명구조; 소방(사다리 E06C)
A62B	인명구조용의 기구, 장치 또는 방법(특히 의료용에 사용되는 밸브 A61M 39/00; 특히 물에서 쓰이는 인명구조 장치 또는 방법 B63C 9/00; 잠수장비 B63C 11/00; 특히 항공기에 쓰는 것, 예. 낙하산, 투출좌석 B64D; 특히 광산에서 쓰이는 구조장치 E21F 11/00)
A62B-1/08	.. 윈치 또는 풀리에 제동기구가 있는 것

내보내기 구분	파일저장 인쇄 메일전송
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연합인증

Device and method for detecting an end point in polishing operation 원문보기

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Device and method for detecting an end point in polishing operation 원문보기

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연구과제 타임라인

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이 특허를 인용한 특허 (77)

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