$\require{mediawiki-texvc}$

연합인증

연합인증 가입 기관의 연구자들은 소속기관의 인증정보(ID와 암호)를 이용해 다른 대학, 연구기관, 서비스 공급자의 다양한 온라인 자원과 연구 데이터를 이용할 수 있습니다.

이는 여행자가 자국에서 발행 받은 여권으로 세계 각국을 자유롭게 여행할 수 있는 것과 같습니다.

연합인증으로 이용이 가능한 서비스는 NTIS, DataON, Edison, Kafe, Webinar 등이 있습니다.

한번의 인증절차만으로 연합인증 가입 서비스에 추가 로그인 없이 이용이 가능합니다.

다만, 연합인증을 위해서는 최초 1회만 인증 절차가 필요합니다. (회원이 아닐 경우 회원 가입이 필요합니다.)

연합인증 절차는 다음과 같습니다.

최초이용시에는
ScienceON에 로그인 → 연합인증 서비스 접속 → 로그인 (본인 확인 또는 회원가입) → 서비스 이용

그 이후에는
ScienceON 로그인 → 연합인증 서비스 접속 → 서비스 이용

연합인증을 활용하시면 KISTI가 제공하는 다양한 서비스를 편리하게 이용하실 수 있습니다.

Dense fluid photochemical process for liquid substrate treatment 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • C02F-001/32
  • C02F-001/78
출원번호 US-0646129 (1991-01-28)
발명자 / 주소
  • Jackson David P. (Saugus CA)
출원인 / 주소
  • Hughes Aircraft Company (Los Angeles CA 02)
인용정보 피인용 횟수 : 84  인용 특허 : 0

초록

A process for removing undesired material from a chosen substrate by exposing the substrate simultaneously to ultraviolet radiation and a selected dense fluid, wherein the radiation produces a photochemical reaction that removes the undesired material from the substrate and the dense fluid enhances

대표청구항

A process for removing undesired material from a chosen liquid substrate comprising the steps of: a) placing said liquid substrate containing said undesired material in a cleaning vessel; b) contacting said liquid substrate containing said undesired material with a chosen dense phase gas above the c

이 특허를 인용한 특허 (84)

  1. Coulter, Bruce Lee, Actinic radiation reactor.
  2. Biberger, Maximilian Albert; Layman, Frederick Paul; Sutton, Thomas Robert, Apparatus for supercritical processing of multiple workpieces.
  3. Yong, Zhee Min Jimmy; Stibitz, David; Coulter, Bruce Lee; Hoosier, Michael Scott, Baffle plates for an ultraviolet reactor.
  4. Butterbaugh Jeffery W. ; Gray David C., Cleaning method.
  5. Butterbaugh Jeffery W. ; Gray David C. ; Fayfield Robert T., Cleaning method.
  6. DeSimone Joseph M. ; Romack Timothy ; Betts Douglas E. ; McClain James B., Cleaning process using carbon dioxide as a solvent and employing molecularly engineered surfactants.
  7. DeSimone Joseph M. ; Romack Timothy ; Betts Douglas E. ; McClain James B., Cleaning process using carbon dioxide as a solvent and employing molecularly engineered surfactants.
  8. DeSimone Joseph M. ; Romack Timothy J. ; Betts Douglas E. ; McClain James B., Cleaning process using carbon dioxide as a solvent and employing molecularly engineered surfactants.
  9. Clark, Shan C.; Ramachandrarao, Vijayakumar S.; Turkot, Jr., Robert B., Cleaning residues from semiconductor structures.
  10. Jones,William Dale, Control of fluid flow in the processing of an object with a fluid.
  11. Arena Foster,Chantal J.; Awtrey,Allan Wendell; Ryza,Nicholas Alan; Schilling,Paul, Developing photoresist with supercritical fluid and developer.
  12. Arena-Foster, Chantal J.; Awtrey, Allan Wendell; Ryza, Nicholas Alan; Schilling, Paul, Developing photoresist with supercritical fluid and developer.
  13. Colburn, Matthew E.; Shneyder, Dmitriy; Siddiqui, Shahab, Development or removal of block copolymer or PMMA-b-S-based resist using polar supercritical solvent.
  14. Colburn,Matthew E.; Shneyder,Dmitriy; Siddiqui,Shahab, Development or removal of block copolymer or PMMA-b-S-based resist using polar supercritical solvent.
  15. Arena-Foster, Chantal J.; Awtrey, Allan Wendell; Ryza, Nicholas Alan; Schilling, Paul, Drying resist with a solvent bath and supercritical CO2.
  16. Martin,Roy, Enhanced air and water purification using continuous breakpoint halogenation with free oxygen radicals.
  17. Martin,Roy, Enhanced air and water purification using continuous breakpoint halogenation with free oxygen radicals.
  18. Martin, Roy, Free radical generator and method.
  19. Martin,Roy, Free radical generator and method.
  20. Biberger, Maximilian A.; Layman, Frederick Paul; Sutton, Thomas Robert, High pressure processing chamber for semiconductor substrate.
  21. Biberger,Maximilian A.; Layman,Frederick Paul; Sutton,Thomas Robert, High pressure processing chamber for semiconductor substrate.
  22. Sheydayi,Alexei, Method and apparatus for clamping a substrate in a high pressure processing system.
  23. Biberger, Maximilian Albert; Layman, Frederick Paul; Sutton, Thomas Robert, Method and apparatus for supercritical processing of multiple workpieces.
  24. Dietze, Uwe; Dress, Peter; Singh, Sherjang, Method and apparatus for treating substrates.
  25. Hill David J. (Lincoln Park MI) Hoitash Frederick J. (Ypsilanti MI), Method and apparatus for using ozone in a pressure vessel to treat stream of pollutants.
  26. Sichel, Cosima, Method and arrangement for a water treatment.
  27. Parent,Wayne M.; Goshi,Gentaro, Method and system for cooling a pump.
  28. Parent,Wayne M., Method and system for determining flow conditions in a high pressure processing system.
  29. Parent, Wayne M.; Geshell, Dan R., Method and system for passivating a processing chamber.
  30. Coulter, Bruce Lee, Method and system for providing ultrapure water.
  31. Coulter, Bruce Lee, Method and system for providing ultrapure water.
  32. Stucker John F., Method and system for rejuvenating pressurized fluid solvents used in cleaning substrates.
  33. Hansen,Brandon; Lowe,Marie, Method and system for treating a substrate with a high pressure fluid using fluorosilicic acid.
  34. Hendrix Walter A. ; Montero Gerardo A. ; Smith C. Brent ; Butcher Donald L., Method for introducing dyes and other chemicals into a textile treatment system.
  35. Hendrix, Walter A.; Montero, Gerardo A.; Smith, C. Brent; Butcher, Donald L., Method for introducing dyes and other chemicals into a textile treatment system.
  36. Coulter, Bruce Lee, Method for measuring a concentration of a compound in a liquid stream.
  37. DeSimone Joseph M. ; Romack Timothy J., Method for olefin oxidation.
  38. Stucker John F., Method for rejuvenating pressurized fluid solvent used in cleaning a fabric article.
  39. McDermott,Wayne Thomas; Parris,Gene Everad; Roth,Dean Van John; Subawalla,Hoshang, Method for removal of flux and other residue in dense fluid systems.
  40. Kawamura,Kohei; Asano,Akira; Miyatani,Koutarou; Hillman,Joseph T.; Palmer,Bentley, Method for supercritical carbon dioxide processing of fluoro-carbon films.
  41. Biberger, Maximilian Albert; Layman, Frederick Paul; Sutton, Thomas Robert, Method for supercritical processing of multiple workpieces.
  42. Biberger, Maximilian A.; Schilling, Paul E., Method of depositing metal film and metal deposition cluster tool including supercritical drying/cleaning module.
  43. Biberger,Maximilian A.; Schilling,Paul E., Method of depositing metal film and metal deposition cluster tool including supercritical drying/cleaning module.
  44. Smith Carl Brent ; Montero Gerardo A. ; Hendrix Walter A., Method of dyeing hydrophobic textile fibers with colorant materials in supercritical fluid carbon dioxide.
  45. DeSimone Joseph M. ; Romack Timothy ; Betts Douglas E. ; McClain James B., Method of entraining solid particulates in carbon dioxide fluids.
  46. Hillman,Joseph, Method of inhibiting copper corrosion during supercritical COcleaning.
  47. Coulter, Bruce Lee, Method of irradiating a liquid.
  48. Toma,Dorel Ioan; Schilling,Paul, Method of passivating of low dielectric materials in wafer processing.
  49. Berry, Ivan; Rounds, Stuart; Hallock, John; Owens, Michael; Dahimene, Mahmoud, Method of photoresist ash residue removal.
  50. Biberger,Maximilian Albert; Layman,Frederick Paul; Sutton,Thomas Robert, Method of supercritical processing of a workpiece.
  51. Schilling,Paul, Method of treating a composite spin-on glass/anti-reflective material prior to cleaning.
  52. Schilling,Paul, Method of treatment of porous dielectric films to reduce damage during cleaning.
  53. McCullough,Kenneth J; Moreau,Wayne M; Pope,Keith R; Purtell,Robert J; Simons,John P; Syverson,William A; Taft,Charles J, Method to build a microfilter.
  54. Masashi Okada JP, Methods and apparatus for removing particulate foreign matter from the surface of a sample.
  55. Sheydayi,Alexei, Non-contact shuttle valve for flow diversion in high pressure systems.
  56. Sauer Richard A. ; Hubert Jean-Luc ; Connors Robert W., Pressure-swing absorption based cleaning methods and systems.
  57. Chao Sidney C. ; Beach Robert W. ; Sorbo Nelson W. ; Purer Edna M., Process for cleaning, disinfecting, and sterilizing materials using the combination of dense phase gas and ultraviolet radiation.
  58. Smith, Carl Brent; Hendrix, Walter A.; Butcher, Donald L., Process for treating textile substrates.
  59. McDermott,Wayne Thomas; Subawalla,Hoshang; Johnson,Andrew David; Schwarz,Alexander, Processing of semiconductor components with dense processing fluids and ultrasonic energy.
  60. Subawalla,Hoshang; Parris,Gene Everad; Rao,Madhukar Bhaskara; Kretz,Christine Peck, Processing of substrates with dense fluids comprising acetylenic diols and/or alcohols.
  61. Gracias, David H.; Kloster, Grant, Protecting metal conductors with sacrificial organic monolayers.
  62. Mullee,William H.; de Leeuwe,Marc; Roberson, Jr.,Glenn A.; Palmer,Bentley J., Removal of CMP and post-CMP residue from semiconductors using supercritical carbon dioxide process.
  63. Mullee, William H.; de Leeuwe, Marc; Roberson, Jr., Glenn A., Removal of CMP residue from semiconductor substrate using supercritical carbon dioxide process.
  64. Mullee William H. ; de Leeuwe Marc ; Roberson ; Jr. Glenn A., Removal of CMP residue from semiconductors using supercritical carbon dioxide process.
  65. Bertram, Ronald Thomas; Scott, Douglas Michael, Removal of contaminants from a fluid.
  66. McCullough Kenneth John ; Purtell Robert Joseph ; Rothman Laura Beth ; Wu Jin-Jwang, Removal of fluorine or chlorine residue by liquid CO.sub.2.
  67. Mullee, William H., Removal of photoresist and photoresist residue from semiconductors using supercritical carbon dioxide process.
  68. Mullee, William H., Removal of photoresist and photoresist residue from semiconductors using supercritical carbon dioxide process.
  69. William H. Mullee ; Maximilian A. Biberger ; Paul E. Schilling, Removal of photoresist and residue from substrate using supercritical carbon dioxide process.
  70. Koch Robert, Removal of polishing residue from substrate using supercritical fluid process.
  71. Mullee William H., Removal of resist or residue from semiconductors using supercritical carbon dioxide.
  72. McCullough Kenneth John ; Purtell Robert Joseph ; Rothman Laura Beth ; Wu Jin-Jwang, Residue removal by supercritical fluids.
  73. Gilton, Terry L.; Li, Li, Semiconductor fabrication apparatus.
  74. Malchesky, Paul S., Sub-critical fluid cleaning and antimicrobial decontamination system and process.
  75. Ching, Gil; Perrut, Vincent; Ruch, Vincent; Fresquet, Gilles, Substrate processing apparatus for processing substrates using dense phase gas and sonic waves.
  76. Joyce, Patrick C.; Tipton, Adrianne; Shrinivasan, Krishnan; Hess, Dennis W.; Myneni, Satyanarayana; Levitin, Galit, Supercritical solutions for cleaning photoresist and post-etch residue from low-k materials.
  77. Meder Martin G., System and method for flash photolysis cleaning of a semiconductor processing chamber.
  78. Coulter, Bruce Lee, System and method for measuring and treating a liquid stream.
  79. Gale,Glenn; Hillman,Joseph T.; Jacobson,Gunilla; Palmer,Bentley, System and method for processing a substrate using supercritical carbon dioxide processing.
  80. Coulter, Bruce Lee, System for controlling introduction of a reducing agent to a liquid stream.
  81. Stucker John F., System for rejuvenating pressurized fluid solvents used in cleaning substrates.
  82. Jacobson,Gunilla; Yellowaga,Deborah, Treatment of a dielectric layer using supercritical CO.
  83. Kevwitch, Robert, Treatment of substrate using functionalizing agent in supercritical carbon dioxide.
  84. Sitkiewitz, Steve Donald; Carmignani, Gary Michael; Fredrick, Lee William, Ultraviolet light activated oxidation process for the reduction of organic carbon in semiconductor process water.
섹션별 컨텐츠 바로가기

AI-Helper ※ AI-Helper는 오픈소스 모델을 사용합니다.

AI-Helper 아이콘
AI-Helper
안녕하세요, AI-Helper입니다. 좌측 "선택된 텍스트"에서 텍스트를 선택하여 요약, 번역, 용어설명을 실행하세요.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.

선택된 텍스트

맨위로