[특허]Device for detecting an end point in polishing operations

[미국특허] Device for detecting an end point in polishing operations 원문보기

IPC분류정보
국가/구분	United States(US) Patent 등록
국제특허분류(IPC7판)	H01L-021/00
출원번호	US-0012056 (1993-02-01)
발명자 / 주소	Leach Michael A. (South Burlington VT) Machesney Brian J. (Burlington VT) Nowak Edward J. (Essex Junction VT)
출원인 / 주소	International Business Machines Corporation (Armonk NY 02)
인용정보	피인용 횟수 : 51 인용 특허 : 0

초록 ▼

The present invention relates to an apparatus for remotely detecting impedance adapted for use on a polishing machine wherein the end point of polishing for removing a surface layer during the processing of semiconductor substrates is detected. A first stationary coil having a high permeability core is wound having an air gap and an AC voltage is applied to the stationary coil to provide a magnetic flux in the air gap. A second coil is mounted for rotation on the polishing table, in a position to periodically pass through the air gap of the stationary coil as the table rotates. The second coil is connected at its opposite ends to contacts which are embedded in the surface of the polishing wheel. The contacts are positioned to engage the surface of the substrate being polished and provide a load on the second rotating coil when it is in the air gap of the stationary coil, will perturb the flux field therein as a function of the resistance of the load caused by the contacts contacting either a conducting surface or a non-conducting surface. This perturbance of the flux field is measured as a change in the induced voltage in the stationary coil which is converted to a signal processed to indicate the end point of polishing, the end point being when a metallic layer has been removed to expose a dielectric layer or when a dielectric layer has been removed to expose a metallic layer.

대표청구항 ▼

A device for determining the end point of a process for polishing a surface film on a substrate, wherein the surface film is progressively removed to reveal at least a portion of the substrate, comprising: a first circuit including a first core having ends which oppose each other and which are separated by an air gap, a first coil wound around said first core, and a current source connected electrically in parallel across said first coil to energize said first coil and induce a magnetic flux density within said air gap; a rotatably platform having a polishing device thereon, said polishing device being disposed to contact the surface of the material being polished when placed thereon, said rotatable platform supporting a second circuit including (i) a second core, (ii) a second coil wound around said second core, and (iii) a pair of electrical contacts connected electrically in parallel across said second coil and positioned so as to contact the surface of a material being polished; a device for rotating said platform to polish the material, whereby said second coil is selectively and periodically disposed within and out of said air gap and said material is gradually removed until said substrate contacts said electrical contacts; and circuitry for (i) sensing the resulting change in said magnetic flux density within said air gap when said substrate contacts said electrical contacts and (ii) providing an electrical signal in response to said changed magnetic flux density.

이 특허를 인용한 특허 (51) 인용/피인용 타임라인 분석

Birang, Manoocher; Gleason, Allan, Apparatus and method for in-situ endpoint detection for chemical mechanical polishing operations.
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Birang, Manoocher; Gleason, Allan, Apparatus and method for in-situ endpoint detection for chemical mechanical polishing operations.
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Birang, Manoocher; Johansson, Nils; Gleason, Allan, Apparatus and method for in-situ endpoint detection for chemical mechanical polishing operations.
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Birang, Manoocher; Johansson, Nils; Gleason, Allan, Apparatus and method for in-situ endpoint detection for semiconductor processing operations.
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Birang Manoocher ; Pyatigorsky Grigory, Apparatus and method for in-situ monitoring of chemical mechanical polishing operations.
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Daniel David W. ; Gregory John W. ; Allman Derryl D. J., Apparatus and method of detecting a polishing endpoint layer of a semiconductor wafer which includes a metallic reporting substance.
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Nikolenko, Yury; Fauss, Matthew, Apparatus and method of using impedance resonance sensor for thickness measurement.
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Tang, Wallace T. Y., Apparatus for detection of thin films during chemical/mechanical polishing planarization.
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Leach Michael A. (345 Sheridan #204 Palo Alto CA 94306), Block for polishing a wafer during manufacture of integrated circuits.
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Willis, Stephen L., Chemical mechanical planarization of conductive material.
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Willis,Stephen L., Chemical mechanical planarization of conductive material.
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Racanelli,Marco; Hu,Chun; Sherman,Phil N., Double-implant high performance varactor and method for manufacturing same.
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Gonzales David B. ; Bartlett Aaron T., Endpoint stabilization for polishing process.
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Gonzales, David B.; Bartlett, Aaron T., Endpoint stabilization for polishing process.
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Nikolenko, Yury, Impedance resonance sensor for real time monitoring of different processes and methods of using same.
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Kesil, Boris; Nikolenko, Yury, Impedance sensing systems and methods for use in measuring constituents in solid and fluid objects.
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Lehman, Kurt R.; Lee, Shing M.; Johnson, III, Walter Halmer; Fielden, John; Zhao, Guoheng; Nikoonahad, Mehrdad, In-situ metalization monitoring using eddy current and optical measurements.
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Kurt R. Lehman ; Shing M. Lee ; Walter Halmer Johnson, III ; John Fielden, In-situ metalization monitoring using eddy current measurements during the process for removing the film.
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Lehman, Kurt R.; Lee, Shing M.; Johnson, III, Walter Halmer; Fielden, John, In-situ metalization monitoring using eddy current measurements during the process for removing the film.
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Lehman, Kurt R.; Lee, Shing M.; Johnson, III, Walter Halmer; Fielden, John, In-situ metalization monitoring using eddy current measurements during the process for removing the film.
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Lehman,Kurt R.; Lee,Shing M.; Johnson, III,Walter Halmer; Fielden,John, In-situ metalization monitoring using eddy current measurements during the process for removing the film.
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Li Leping ; Barbee Steven George ; Halperin Arnold ; Heinz Tony Frederick, In-situ monitoring and control of conductive films by detecting changes in induced eddy currents.
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Li Leping ; Barbee Steven George ; Halperin Arnold ; Heinz Tony Frederick, In-situ monitoring of the change in thickness of films.
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Tang, Wallace T. Y., In-situ real-time monitoring technique and apparatus for detection of thin films during chemical/mechanical polishing planarization.
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Tang,Wallace T. Y., In-situ real-time monitoring technique and apparatus for detection of thin films during chemical/mechanical polishing planarization.
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Tang, Wallace T. Y., In-situ real-time monitoring technique and apparatus for endpoint detection of thin films during chemical/mechanical polishing planarization.
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Tang,Wallace T. Y., In-situ real-time monitoring technique and apparatus for endpoint detection of thin films during chemical/mechanical polishing planarization.
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Fukuroi, Osamu, Lapping sensor used in fabrication of magnetic head with magnetoresistive effect element and lapping control method using the sensor.
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Crevasse Annette M. ; Easter William G. ; Maze John A., Magnetic frictionless gimbal for a polishing apparatus.
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Gitis Norm ; Vinogradov Michael, Method and apparatus for controlled polishing.
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Lustig Naftali Eliahu ; Guthrie William L. ; Sandwick Thomas E., Method and apparatus for in-line oxide thickness determination in chemical-mechanical polishing.
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Robert S. Okojie, Method and apparatus for obtaining a precision thickness in semiconductor and other wafers.
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Birang, Manoocher; Swedek, Boguslaw A.; Kim, Hyeong Cheol, Method and apparatus of eddy current monitoring for chemical mechanical polishing.
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Birang,Manoocher; Swedek,Boguslaw A.; Kim,Hyeong Cheol, Method and apparatus of eddy current monitoring for chemical mechanical polishing.
상세보기
Leach Michael A., Method and structure for polishing a wafer during manufacture of integrated circuits.
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Leach Michael A. (345 Sheridan #204 Palo Alto CA 94306), Method and structure for polishing a wafer during manufacture of integrated circuits.
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Packard Edward L. (908 Noreen Ct. San Marcos CA 92069), Method for accurately setting the gap in an inductive magnetic head.
상세보기
Birang, Manoocher; Johansson, Nils; Gleason, Allan, Method for in-situ endpoint detection for chemical mechanical polishing operations.
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Wu,I Wen; Tseng,Chen Chiu, Method of fabricating semiconductor integrated circuits.
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Torek Kevin J., Method of making an oxide structure having a finely calibrated thickness.
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Nikolenko, Yury, NMR spectroscopy device based on resonance type impedance (IR) sensor and method of NMR spectra acquisition.
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Kevin J. Torek, Oxide structure having a finely calibrated thickness.
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Birang,Manoocher; Gleason,Allan; Guthrie,William L., Polishing assembly with a window.
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Kitajima,Tomohiko; Yasuhara,Gen, Polishing method and apparatus.
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Birang, Manoocher; Gleason, Allan, Polishing pad for in-situ endpoint detection.
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Birang,Manoocher; Gleason,Allan; Guthrie,William L., Polishing pad with window and method of fabricating a window in a polishing pad.
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Birang, Manoocher; Pyatigorsky, Grigory, Substrate polishing metrology using interference signals.
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Birang, Manoocher; Pyatigorsky, Grigory, Substrate polishing metrology using interference signals.
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Birang, Manoocher; Pyatigorsky, Grigory, Substrate polishing metrology using interference signals.
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Birang, Manoocher; Pyatigorsky, Grigory, Substrate polishing metrology using interference signals.
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Murarka Shyam P. (Clifton Park NY) Gutmann Ronald J. (Troy NY) Duquette David J. (Loudonville NY) Steigerwald Joseph M. (Aloha OR), Systems for performing chemical mechanical planarization and process for conducting same.
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IPC	Description
A	생활필수품
A62	인명구조; 소방(사다리 E06C)
A62B	인명구조용의 기구, 장치 또는 방법(특히 의료용에 사용되는 밸브 A61M 39/00; 특히 물에서 쓰이는 인명구조 장치 또는 방법 B63C 9/00; 잠수장비 B63C 11/00; 특히 항공기에 쓰는 것, 예. 낙하산, 투출좌석 B64D; 특히 광산에서 쓰이는 구조장치 E21F 11/00)
A62B-1/08	.. 윈치 또는 풀리에 제동기구가 있는 것

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[미국특허] Device for detecting an end point in polishing operations 원문보기