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Method of making backside illuminated image sensors 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-031/18
출원번호 US-0923674 (1992-08-03)
발명자 / 주소
  • Hawkins Gilbert A. (Mendon NY) Gluck Ronald M. (Rochester NY)
출원인 / 주소
  • Eastman Kodak Company (Rochester NY 02)
인용정보 피인용 횟수 : 80  인용 특허 : 0

초록

A method of making a backside illuminated image includes forming a device on the frontside of thin device layer provided on an oxide layer which is mounted on a sacrificial substrate and bonding the front side of the device layer to a permanent silicon support substrate. Thereafter, the oxide layer

대표청구항

In a method of making an image sensor which will be backside illuminated, comprising the steps of: (a) forming a first oxide layer on a thin epitaxial device layer grown on a first sacrificial silicon substrate; (b) forming a boron containing region at the interface of the backside of the device lay

이 특허를 인용한 특허 (80)

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  35. Hsu, Tzu-Hsuan; Yaung, Dun-Nian, Method for providing metal extension in backside illuminated sensor for wafer level testing.
  36. Faure, Bruce; Di Cioccio, Lea, Method of fabricating an epitaxially grown layer.
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  77. Letertre, Fabrice; Le Vaillant, Yves Mathieu; Jalaguier, Eric, Wafer and method of producing a substrate by transfer of a layer that includes foreign species.
  78. Letertre, Fabrice; Le Vaillant, Yves Mathieu; Jalaguier, Eric, Wafer and method of producing a substrate by transfer of a layer that includes foreign species.
  79. Brady, Frederick T., Wafer level processing for backside illuminated image sensors.
  80. Brady, Frederick T., Wafer level processing for backside illuminated sensors.
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