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Machining oxide thin-films with an atomic force microscope: pattern and object formation on the nanometer scale 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • G21K-005/10
출원번호 US-0916215 (1992-07-17)
발명자 / 주소
  • Lieber Charles M. (Lexington MA) Kim Yun (Cambridge MA)
출원인 / 주소
  • President and Trustees of Harvard College (Cambridge MA 02)
인용정보 피인용 횟수 : 151  인용 특허 : 0

초록 ▼

An atomic force microscope (AFM) has been used to machine complex patterns and to form free structural objects in thin layers of MoO3 grown on the surface of MoS2. The AFM tip can pattern lines with ≤10 nm resolution and then image the resulting structure without perturbation by controlling the appl

대표청구항

A method for machining oxide thin-films, comprising the steps of: a) employing an atomic force microscope to pattern lines on the oxide thin film; and b) imaging a resulting structure by controlling an applied load of a tip of the atomic force microscope.

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