이 특허를 인용한 특허 (188)

1. Messner Robert P. ; Kessel Carl R. ; Moore George G., Abrasive articles comprising a fluorochemical agent for wafer surface modification.

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2. Rutherford Denise R. (Stillwater MN) Goetz Douglas P. (St. Paul MN) Thomas Cristina U. (Woodbury MN) Webb Richard J. (Inver Grove Heights MN) Bruxvoort Wesley J. (Woodbury MN) Buhler James D. (Shring, Abrasive construction for semiconductor wafer modification.

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3. Rutherford Denise R. ; Goetz Douglas P. ; Thomas Cristina U. ; Webb Richard J. ; Bruxvoort Wesley J. ; Buhler James D. ; Hollywood William J., Abrasive construction for semiconductor wafer modification.

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4. Birang, Manoocher; Gleason, Allan, Apparatus and method for in-situ endpoint detection for chemical mechanical polishing operations.

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5. Birang, Manoocher; Gleason, Allan, Apparatus and method for in-situ endpoint detection for chemical mechanical polishing operations.

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6. Birang, Manoocher; Johansson, Nils; Gleason, Allan, Apparatus and method for in-situ endpoint detection for chemical mechanical polishing operations.

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7. Birang, Manoocher; Johansson, Nils; Gleason, Allan, Apparatus and method for in-situ endpoint detection for chemical mechanical polishing operations.

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8. Birang, Manoocher; Johansson, Nils; Gleason, Allan, Apparatus and method for in-situ endpoint detection for chemical mechanical polishing operations.

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9. Birang, Manoocher; Johansson, Nils; Gleason, Allan, Apparatus and method for in-situ endpoint detection for semiconductor processing operations.

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10. Wright David Q., Apparatus and method for polishing a semiconductor wafer in an overhanging position.

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11. Wright David Q., Apparatus and method for polishing a semiconductor wafer in an overhanging position.

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12. Torii Kouji,JPX, Apparatus and method for polishing semiconductor device.

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13. Tjaden Kevin ; Urbina G. Hugo, Apparatus and method for semiconductor planarization.

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14. Tang, Wallace T. Y., Apparatus for detection of thin films during chemical/mechanical polishing planarization.

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15. Nakayoshi, Yuichi, Apparatus for polishing a semiconductor wafer.

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16. Bajaj, Rajeev; Chin, Barry Lee; Lee, Terrance Y., Apparatus for printing a chemical mechanical polishing pad.

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17. Bajaj, Rajeev; Chin, Barry Lee; Lee, Terrance Y., Apparatus for printing a chemical mechanical polishing pad.

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18. Cote William J. (Poughquag NY) Ryan James G. (Newtown CT) Okumura Katsuya (Poughkeepsie NY) Yano Hiroyuki (Wappingers Falls NY), Apparatus for processing semiconductor wafers.

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19. Tietz,James V.; Li,Shijian; Birang,Manoocher; White,John M.; Rosenberg, legal representative,Sandra L.; Scales,Marty; Emami,Ramin; Rosenberg, deceased,Lawrence M., Article for polishing semiconductor substrates.

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20. Li,Shijian; Chen,Llang Yuh; Duboust,Alain, Articles for polishing semiconductor substrates.

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21. Scott, Diane B.; Baker, III, Arthur Richard; Zhang, Tao, Base-pad for a polishing pad.

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22. Leach Michael A. (345 Sheridan #204 Palo Alto CA 94306), Block for polishing a wafer during manufacture of integrated circuits.

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23. Umbrell Richard, Buffer centering system.

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24. Dornfeld,David; Lee,Sunghoon, CMP pad with designed surface features.

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25. Tolles Robert D. ; Mear Steven T. ; Prabhu Gopalakrishna B. ; Zuniga Steven ; Chen Hung, CMP polishing pad.

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26. Tolles, Robert D.; Mear, Steven T.; Prabhu, Gopalakrishna B.; Zuniga, Steven; Chen, Hung, CMP polishing pad.

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27. Cheek Roger W. ; Cronin John E. ; Nadeau Douglas P. ; Rutten Matthew J. ; Wright Terrance M., CMP polishing pad backside modifications for advantageous polishing results.

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28. Desorcie Daniel D. ; Lebel Richard J. ; McKinney Charles A. ; Nadeau Rock ; Rickard ; Jr. Timothy J. ; Smith ; Jr. Paul H. ; Sturtevant Douglas K. ; Tiersch Matthew T., CMP wafer carrier for preferential polishing of a wafer.

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29. Umbrell Richard T., Centering system for buffing pad.

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30. Lacy, Michael S.; Boyd, John M., Chemical mechanical planarization belt assembly and method of assembly.

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31. Wang,Dapeng, Chemical mechanical polishing apparatus and methods for chemical mechanical polishing.

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32. Tran,Joe G.; Kaneshige,Chad J.; Kirkpatrick,Brian K., Chemical mechanical polishing method and apparatus.

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33. Donohue,Timothy James; Balagani,Venkata R.; Beau de Lomenie,Romain, Chemical mechanical polishing pad for controlling polishing slurry distribution.

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34. Jensen, Michelle; Nowland, John Gifford; Harding, Brenda; Corder, Carol, Chemical mechanical polishing pad manufacturing assembly.

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35. Wang, Dapeng, Chemical mechanical polishing pads.

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36. Case James R. ; Kiballa Gerald A. ; Shuman Michael A., Chemical planar head dampening system.

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37. Case, James R.; Kiballa, Gerald A.; Shuman, Michael A., Chemical planar head dampening system.

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38. Hsu, Oscar K.; Lefevre, Paul; Jin, Marc C.; Aldeborgh, John Erik; Wells, David Adam, Chemical-mechanical planarization pad.

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39. Misra, Sudhanshu; Roy, Pradip K., Composite polishing pads for chemical-mechanical polishing.

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40. Hardy, L. Charles; Kranz, Heather K.; Wood, Thomas E.; Kaisaki, David A.; Gagliardi, John J.; Clark, John C.; Savu, Patricia M.; Clark, Philip G., Compositions and methods for modifying a surface suited for semiconductor fabrication.

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41. Mavliev,Rashid A.; Wadensweiler,Ralph M., Conductive pad.

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42. Mavliev, Rashid A.; Karuppiah, Lakshmanan, Conductive pad design modification for better wafer-pad contact.

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43. Chen,Liang Yun; Wang,Yuchun; Wang,Yan; Duboust,Alain; Carl,Daniel A.; Wadensweiler,Ralph; Birang,Manoocher; Butterfield,Paul D.; Mavliev,Rashid A.; Tsai,Stan D.; Wang,You; Diao,Jie; Jia,Renhe; Karuppiah,Lakshmanan; Ewald,Robert, Conductive pad with ion exchange membrane for electrochemical mechanical polishing.

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44. Butterfield, Paul D.; Chen, Liang-Yuh; Hu, Yonqi; Manens, Antoine P.; Mavliev, Rashid; Tsai, Stan D.; Liu, Feng Q.; Wadensweiler, Ralph; Sun, Lizhong; Neo, Siew S.; Duboust, Alain, Conductive polishing article for electrochemical mechanical polishing.

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45. Butterfield,Paul D.; Chen,Liang Yuh; Hu,Yongqi; Manens,Antoine P.; Mavliev,Rashid; Tsai,Stan D.; Liu,Feng Q.; Wadensweiler,Ralph, Conductive polishing article for electrochemical mechanical polishing.

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46. Butterfield,Paul D.; Chen,Liang Yuh; Hu,Yonqi; Manens,Antoine P.; Mavliev,Rashid; Tsai,Stan D.; Liu,Feng Q.; Wadensweiler,Ralph; Sun,Lizhong; Neo,Siew S.; Duboust,Alain, Conductive polishing article for electrochemical mechanical polishing.

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47. Butterfield,Paul D.; Chen,Liang Yuh; Hu,Yonqi; Manens,Antoine P.; Mavliev,Rashid; Tsai,Stan D.; Liu,Feng Q.; Wadensweiler,Ralph; Sun,Lizhong; Neo,Siew S.; Duboust,Alain, Conductive polishing article for electrochemical mechanical polishing.

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48. Chen,Liang Yuh; Wang,Yuchun; Wang,Yan; Duboust,Alain; Carl,Daniel A.; Wadensweiler,Ralph; Birang,Manoocher; Butterfield,Paul D.; Mavliev,Rashid; Tsai,Stan D., Conductive polishing article for electrochemical mechanical polishing.

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49. Chen,Liang Yuh; Wang,Yuchun; Wang,Yan; Duboust,Alain; Carl,Daniel A.; Wadensweiler,Ralph; Birang,Manoocher; Butterfield,Paul D.; Mavliev,Rashid; Tsai,Stan D., Conductive polishing article for electrochemical mechanical polishing.

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50. Chen,Liang Yuh; Wang,Yuchun; Wang,Yan; Duboust,Alain; Carl,Daniel A.; Wadensweiler,Ralph; Birang,Manoocher; Butterfield,Paul D.; Mavliev,Rashid; Tsai,Stan D., Conductive polishing article for electrochemical mechanical polishing.

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51. Hu, Yongqi; Wang, Yan; Duboust, Alain; Liu, Feng Q.; Mavliev, Rashid; Chen, Liang-Yuh; Morad, Ratson; Somekh, Sasson, Conductive polishing article for electrochemical mechanical polishing.

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52. Hu,Yongqi; Wang,Yan; Duboust,Alain; Liu,Feng Q.; Manens,Antoine P.; Neo,Siew S.; Tsai,Stan D.; Chen,Liang Yuh; Butterfield,Paul D.; Tian,Yuan A.; Ko,Sen Hou, Conductive polishing article for electrochemical mechanical polishing.

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53. Hu,Yongqi; Wang,Yan; Duboust,Alain; Liu,Feng Q.; Manens,Antoine P.; Neo,Siew S.; Tsai,Stan D.; Chen,Liang Yuh; Butterfield,Paul D.; Tian,Yuan A.; Ko,Sen Hou, Conductive polishing article for electrochemical mechanical polishing.

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54. Liu, Feng Q.; Mavliev, Rashid, Contact assembly and method for electrochemical mechanical processing.

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55. Butterfield, Paul; Chen, Liang Yuh; Hu, Yongqi; Manens, Antoine; Mavliev, Rashid; Tsai, Stan, Contacts for electrochemical processing.

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56. Butterfield,Paul; Chen,Liang Yuh; Hu,Yongqi; Manens,Antoine; Mavliev,Rashid; Tsai,Stan, Contacts for electrochemical processing.

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57. Mavliev,Rashid; Tsai,Stan; Hu,Yongqi; Butterfield,Paul; Manens,Antoine; Chen,Liang Yuh, Contacts for electrochemical processing.

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58. Steckenrider,J. Scott; Snider,Gary W., Continuous contour polishing of a multi-material surface.

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59. Geha Sam ; Shan Ende, Controlled isotropic etch process and method of forming an opening in a dielectric layer.

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60. Duboust,Alain; Manens,Antoine P.; Chen,Liang Yuh, Edge bead removal by an electro polishing process.

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61. Wiswesser,Andreas Norbert; Schoenleber,Walter, Endpoint detection with multiple light beams.

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62. Lombardo, Brian, Foam semiconductor polishing belts and pads.

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63. Runnels Scott ; Toprac Anthony J., Forced-flow wafer polisher.

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64. Birang,Manoocher; Gleason,Allan; Guthrie,William L., Forming a transparent window in a polishing pad for a chemical mechanical polishing apparatus.

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65. Lombardo, Brian; Otto, Jeffrey P., Froth and method of producing froth.

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66. Liu,Feng Q.; Chen,Liang Yuh; Tsai,Stan D.; Hu,Yongqi, Full sequence metal and barrier layer electrochemical mechanical processing.

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67. Liu,Feng Q.; Chen,Liang Yuh; Tsai,Stan D.; Hu,Yongqi, Full sequence metal and barrier layer electrochemical mechanical processing.

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68. Petroski,Angela; Cooper,Richard D.; Fathauer,Paul; Perry,David, Gradient polishing pad made from paper-making fibers for use in chemical/mechanical planarization of wafers.

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69. Umbrell Richard T., Heat dissipating buffing pad.

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70. Tang, Wallace T. Y., In-situ real-time monitoring technique and apparatus for detection of thin films during chemical/mechanical polishing planarization.

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71. Tang,Wallace T. Y., In-situ real-time monitoring technique and apparatus for detection of thin films during chemical/mechanical polishing planarization.

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72. Tang, Wallace T. Y., In-situ real-time monitoring technique and apparatus for endpoint detection of thin films during chemical/mechanical polishing planarization.

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73. Tang,Wallace T. Y., In-situ real-time monitoring technique and apparatus for endpoint detection of thin films during chemical/mechanical polishing planarization.

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74. Shih, Wen Chang, Inlaid polishing pad.

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75. Huh,Hyun; Lee,Sang Mok; Song,Kee Cheon; Kim,Seung geun; Son,Do Kwon, Integral polishing pad and manufacturing method thereof.

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76. Hsu,Wei Yung; Chen,Liang Yuh; Morad,Ratson; Carl,Daniel A.; Somekh,Sasson, Integrated multi-step gap fill and all feature planarization for conductive materials.

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77. Pant Anil K. ; Jairath Rahul ; Mishra Kamal ; Chadda Saket ; Krusell Wilbur C., Integrated pad and belt for chemical mechanical polishing.

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78. Pant, Anil K.; Jairath, Rahul; Mishra, Kamal; Chadda, Saket; Krusell, Wilbur C., Integrated pad and belt for chemical mechanical polishing.

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79. Redeker,Fred C.; Birang,Manoocher; Li,Shijian; Somekh,Sasson, Linear polishing sheet with window.

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80. Tolles, Robert D., Material for use in carrier and polishing pads.

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81. Daniel F. Kennedy ; Victor Belitsky ; Arul Shanmugasundram, Method and apparatus for automatically changing a polishing pad in a chemical mechanical polishing system.

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82. Berman Michael J. ; Holland Karey L., Method and apparatus for concurrent pad conditioning and wafer buff in chemical mechanical polishing.

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83. Wang, Yan; Neo, Siew; Liu, Feng; Tsai, Stan D.; Hu, Yongqi; Duboust, Alain; Manens, Antoine; Wadensweiler, Ralph M.; Mavliev, Rashid; Chen, Liang-Yuh; Olgado, Donald J. K.; Butterfield, Paul D.; Tseng, Ming-Kuei; Chang, Shou-Sung; Sun, Lizhong, Method and apparatus for electrochemical mechanical processing.

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84. Boyd, John M.; Lacy, Michael S., Method and apparatus for fixed abrasive substrate preparation and use in a cluster CMP tool.

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85. Boyd, John M.; Lacy, Michael S., Method and apparatus for fixed abrasive substrate preparation and use in a cluster CMP tool.

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86. John M. Boyd ; Michael S. Lacy, Method and apparatus for fixed abrasive substrate preparation and use in a cluster CMP tool.

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87. Boyd, John M., Method and apparatus for fixed-abrasive substrate manufacturing and wafer polishing in a single process path.

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88. Pecen, Jiri; Chadda, Saket; Jairath, Rahul; Krusell, Wilbur C., Method and apparatus for in-situ monitoring of thickness during chemical-mechanical polishing.

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89. Edward T. Ferri, Jr. ; Randall L. Green ; Anil K. Pant, Method and apparatus for polishing semiconductor wafers.

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90. Erik H. Engdahl ; Edward T. Ferri, Jr. ; Wilbur C. Krusell ; Rahul Jairath ; Randall L. Green ; Anil Pant, Method and apparatus for polishing semiconductor wafers.

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91. Birang, Manoocher; Swedek, Boguslaw A.; Kim, Hyeong Cheol, Method and apparatus of eddy current monitoring for chemical mechanical polishing.

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92. Birang,Manoocher; Swedek,Boguslaw A.; Kim,Hyeong Cheol, Method and apparatus of eddy current monitoring for chemical mechanical polishing.

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93. Leach Michael A., Method and structure for polishing a wafer during manufacture of integrated circuits.

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94. Leach Michael A. (345 Sheridan #204 Palo Alto CA 94306), Method and structure for polishing a wafer during manufacture of integrated circuits.

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95. Tjaden Kevin ; Urbina G. Hugo, Method and system to increase delivery of slurry to the surface of large substrates during polishing operations.

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96. Jensen, Michelle; Qian, Bainian; Yeh, Fengji; DeGroot, Marty W.; Islam, Mohammad T.; Van Hanehem, Matthew Richard; String, Darrell; Murnane, James; Hendron, Jeffrey James; Nowland, John G., Method of chemical mechanical polishing a substrate.

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97. Swedek,Boguslaw A.; Birang,Manoocher, Method of forming a polishing pad for endpoint detection.

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98. Birang, Manoocher; Gleason, Allan; Guthrie, William L., Method of forming a transparent window in a polishing pad.

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99. Wiswesser, Andreas Norbert; Oshana, Ramiel; Hughes, Kerry F.; Rohde, Jay; Huo, David Datong; Benvegnu, Dominic J., Method of making and apparatus having polishing pad with window.

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100. Jensen, Michelle; Nowland, John Gifford; Harding, Brenda; Corder, Carol, Method of manufacturing a chemical mechanical polishing pad.

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101. Shih,Wen Chang; Chang,Yung Chung; Chu,Min Kuei; Wei,Lung Chen, Method of manufacturing polishing pad.

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102. Shih,Wen Chang; Chang,Yung Chung; Chu,Min Kuei; Wei,Lung Chen, Method of manufacturing polishing pad.

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103. Matsuda Tetsuo (Poughkeepsie NY) Okumura Katsuya (Poughkeepsie NY), Method of planarizing a semiconductor workpiece surface.

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104. Marmillion Patricia E. ; Palagonia Anthony M., Method of planarizing a workpiece.

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105. Schatz Kenneth D. ; Huff Brett, Method of planarizing by polishing a structure which is formed to promote planarization.

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106. Shih,Wen Chang, Method of producing inlaid polishing pad.

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107. Ono,Koichi; Shimomura,Tetsuo; Nakamori,Masahiko; Yamada,Takatoshi; Komai,Shigeru; Tsutsumi,Masayuki, Method of producing polishing pad.

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108. Engdahl, Erik H.; Ferri, Jr., Edward T.; Krusell, Wilbur C.; Jairath, Rahul, Method of transporting a semiconductor wafer in a wafer polishing system.

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109. Carpenter, Craig M., Microelectronic substrate assembly planarizing machines and methods of mechanical and chemical-mechanical planarization of microelectronic substrate assemblies.

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110. Tsai, Stan D.; Chang, Shou-Sung; Chen, Liang-Yuh, Multi-layer polishing pad.

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111. Mrzyglod, Brian; Nair, Jayakrishnan; Blake, Garrett, Multi-layer polishing pad for CMP.

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112. Duboust, Alain; Chang, Shou-Sung; Lu, Wei; Neo, Siew; Wang, Yan; Manens, Antoine P.; Moon, Yongsik, Multi-layer polishing pad for low-pressure polishing.

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113. Prasad, Abaneshwar; Sevilla, Roland K.; Lacy, Michael S., Multi-layer polishing pad material for CMP.

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114. Prasad,Abaneshwar; Lacy,Michael S., Multi-layer polishing pad material for CMP.

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115. Jensen, Michelle; Nowland, John Gifford; Harding, Brenda; Corder, Carol, Multilayer chemical mechanical polishing pad manufacturing process.

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116. Murnane, James; Qian, Bainian; Nowland, John G.; Jensen, Michelle K.; Hendron, Jeffrey James; DeGroot, Marty W.; James, David B.; Yeh, Fengji, Multilayer chemical mechanical polishing pad stack with soft and conditionable polishing layer.

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117. Tolles, Robert D., Multilayer polishing pad and method of making.

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118. Chang,Shou Sung; Tsai,Stan D.; Olgado,Donald J. K.; Chen,Liang Yuh; Duboust,Alain; Wadensweiler,Ralph M., Pad assembly for electrochemical mechanical polishing.

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119. Chang,Shou Sung; Tsai,Stan D.; Olgado,Donald J. K.; Chen,Liang Yuh; Duboust,Alain; Wadensweiler,Ralph M., Pad assembly for electrochemical mechanical processing.

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120. Chang,Shou Sung; Tsai,Stan D; Olgado,Donald J. K.; Chen,Liang Yuh; Duboust,Alain; Wadensweiler,Ralph M., Pad assembly for electrochemical mechanical processing.

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121. Hu,Yongqi; Tsai,Stan D.; Wang,Yan; Liu,Feng Q.; Chang,Shou Sung; Chen,Liang Yuh, Pad assembly for electrochemical mechanical processing.

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122. Hu,Yongqi; Tsai,Stan D.; Wang,Yan; Liu,Feng Q.; Chang,Shou Sung; Chen,Liang Yuh, Pad assembly for electrochemical mechanical processing.

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123. Zuniga, Steven M.; McReynolds, Peter; Rondum, Erik S.; Bonner, Benjamin A.; Au, Henry H.; Menk, Gregory E.; Prabhu, Gopalakrishna B.; Iyer, Anand N.; Leung, Garlen C., Polishing apparatus with grooved subpad.

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124. Bunyan,Michael H.; Clement,Thomas A.; Hannafin,John J.; LaRosee,Marc E.; Young,Kent M., Polishing article for electro-chemical mechanical polishing.

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125. Menk, Gregory E.; McReynolds, Peter; Rondum, Erik S.; Iyer, Anand N.; Prabhu, Gopalakrishna B.; Leung, Garlen C., Polishing article with integrated window stripe.

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126. Menk, Gregory E.; McReynolds, Peter; Rondum, Erik S.; Iyer, Anand N.; Prabhu, Gopalakrishna B.; Leung, Garlen C., Polishing article with integrated window stripe.

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127. Birang,Manoocher; Gleason,Allan; Guthrie,William L., Polishing assembly with a window.

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128. Anil K. Pant ; Douglas W. Young ; Glenn Travis ; Konstantin Volodarsky ; Andrew Nagengast, Polishing head for chemical mechanical polishing using linear planarization technology.

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129. Volodarsky, Konstantin, Polishing head with removable subcarrier.

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130. Allison,William C.; Swisher,Robert G.; Wang,Alan E., Polishing pad.

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131. Chiu, Allen; Chen, Shao-Yu; Jeng, Yu-Lung, Polishing pad.

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132. Ishii, Yu; Ito, Kenya; Takahashi, Shozo; Suzuki, Mika, Polishing pad and chemical mechanical polishing apparatus for polishing a workpiece, and method of polishing a workpiece using the chemical mechanical polishing apparatus.

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133. Ono, Koichi; Shimomura, Tetsuo; Nakamori, Masahiko; Yamada, Takatoshi; Komai, Shigeru; Tsutsumi, Masayuki, Polishing pad and cushion layer for polishing pad.

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134. Ono, Koichi; Shimomura, Tetsuo; Nakamori, Masahiko; Yamada, Takatoshi; Komai, Shigeru; Tsutsumi, Masayuki, Polishing pad and cushion layer for polishing pad.

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135. Shimomura,Tetsuo; Kazuno,Atsushi; Ogawa,Kazuyuki; Nakai,Yoshiyuki; Nakamori,Masahiko; Yamada,Takatoshi, Polishing pad and method for manufacture of semiconductor device using the same.

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136. Anjur Sriram P. ; Downing William C., Polishing pad for a semiconductor substrate.

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137. Sevilla Roland K. ; Kaufman Frank B. ; Anjur Sriram P., Polishing pad for a semiconductor substrate.

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138. Swedek, Boguslaw A.; Birang, Manoocher, Polishing pad for endpoint detection and related methods.

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139. Swedek, Boguslaw A.; Birang, Manoocher, Polishing pad for endpoint detection and related methods.

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140. Birang, Manoocher; Gleason, Allan, Polishing pad for in-situ endpoint detection.

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141. Cooper, Richard D.; Fathauer, Paul; Mroczek-Petroski, Angela; Perry, David; Petroski, James J., Polishing pad for use in chemical-mechanical planarization of semiconductor wafers and method of making same.

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142. Petroski,Angela; Cooper,Richard D.; Fathauer,Paul; Yesnik,Marc Andrew, Polishing pad for use in chemical-mechanical planarization of semiconductor wafers and method of making same.

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143. Petroski, Angela; Cooper, Richard D.; Fathauer, Paul; Yesnik, Marc Andrew, Polishing pad for use in chemical?mechanical planarization of semiconductor wafers and method of making same.

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144. Cheng Tsungnan ; Wilson Ethan C. ; Chang Shou-sung ; Lee Gregory C. ; Tzeng Huey M. ; Weldon David E. ; Can Linh X. ; Lau Luis ; Yang Siyuan, Polishing pad shaping and patterning.

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145. Prasad, Abaneshwar, Polishing pad with microporous regions.

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146. Prasad,Abaneshwar, Polishing pad with oriented pore structure.

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147. Joseph, William D., Polishing pad with porous elements and method of making and using the same.

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148. Wiswesser, Andreas Norbert; Swedek, Boguslaw A., Polishing pad with transparent window.

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149. Tolles, Robert D., Polishing pad with transparent window having reduced window leakage for a chemical mechanical polishing apparatus.

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150. Tolles, Robert D., Polishing pad with transparent window having reduced window leakage for a chemical mechanical polishing apparatus.

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151. Tolles,Robert D., Polishing pad with transparent window having reduced window leakage for a chemical mechanical polishing apparatus.

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152. Swedek, Boguslaw A.; Birang, Manoocher, Polishing pad with two-section window having recess.

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153. Wiswesser,Andreas Norbert, Polishing pad with window.

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154. Wiswesser,Andreas Norbert, Polishing pad with window.

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155. Wiswesser,Andreas Norbert; Oshana,Ramiel; Hughes,Kerry F.; Rohde,Jay; Huo,David Datong; Benvegnu,Dominic J., Polishing pad with window.

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156. Birang,Manoocher; Gleason,Allan; Guthrie,William L., Polishing pad with window and method of fabricating a window in a polishing pad.

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157. Tanaka Koichi,JPX ; Morita Koji,JPX ; Takaku Tsutomu,JPX, Polishing pad, method and apparatus for treating polishing pad and polishing method.

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158. Ono,Koichi; Shimomura,Tetsuo; Nakamori,Masahiko; Yamada,Takatoshi; Komai,Shigeru; Tsutsumi,Masayuki, Polishing pad, method of producing the same, and cushion layer for polishing pad.

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159. Sevilla Roland K. ; Kaufman Frank B. ; Anjur Sriram P., Polishing pads for a semiconductor substrate.

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160. Joseph, William D.; Palmgren, Gary M.; Loper, Stephen C.; Loesch, Christopher N., Polishing pads including phase-separated polymer blend and method of making and using the same.

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161. Birang,Manoocher; Swedek,Boguslaw A., Polishing pads useful for endpoint detection in chemical mechanical polishing.

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162. Dudovicz, Walter, Polishing silicon wafers.

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163. Dudovicz, Walter, Polishing silicon wafers.

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164. Swisher,Robert G.; Wang,Alan E.; Allison,William C., Polyurethane urea polishing pad.

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165. Bajaj, Rajeev; Chin, Barry Lee; Lee, Terrance Y., Printing a chemical mechanical polishing pad.

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166. Manens,Antoine P., Processing pad assembly with zone control.

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167. Roberts,John V. H.; Vesier,Laurent S., Resilient polishing pad for chemical mechanical polishing.

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168. Chao Mike ; Huynh Tim H. ; Guo Chi ; Tzeng Huey M., Robust belt tracking and control system for hostile environment.

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169. Shih,Wen Chang; Chang,Yung Chung; Chu,Min Kuei, Single-layer polishing pad and method producing the same.

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170. Murnane, James; Qian, Bainian; Nowland, John G.; Jensen, Michelle K.; Hendron, Jeffrey James; DeGroot, Marty W.; James, David B.; Yeh, Fengji, Soft and conditionable chemical mechanical polishing pad stack.

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171. Qian, Bainian; Jensen, Michelle K.; DeGroot, Marty W.; Repper, Angus; Murnane, James; Hendron, Jeffrey James; Nowland, John G.; James, David B.; Yeh, Fengji, Soft and conditionable chemical mechanical window polishing pad.

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172. Chen Shyng-Tsong ; Lofaro Michael F. ; Smith Woody Ray, Stacked polish pad.

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173. Renteln,Peter, Stacked polyurethane polishing pad and method of producing the same.

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174. Tolles, Robert D., Substrate polishing apparatus.

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175. Tolles Robert D., Substrate polishing article.

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176. Tolles, Robert D., Substrate polishing article.

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177. Tolles, Robert D., Substrate polishing article.

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178. Birang, Manoocher; Pyatigorsky, Grigory, Substrate polishing metrology using interference signals.

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179. Birang, Manoocher; Pyatigorsky, Grigory, Substrate polishing metrology using interference signals.

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180. Birang, Manoocher; Pyatigorsky, Grigory, Substrate polishing metrology using interference signals.

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181. Birang, Manoocher; Pyatigorsky, Grigory, Substrate polishing metrology using interference signals.

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182. Kido, Takanori; Kato, Tomohisa, Surface machining method for single crystal SiC substrate, manufacturing method thereof, and grinding plate for surface machining single crystal SiC substrate.

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183. Arai Hatsuyuki,JPX ; Wang Xu Jin,JPX, Surface polishing pad.

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184. Katrina Mikhaylich ; Michael Ravkin, System and method of defect optimization for chemical mechanical planarization of polysilicon.

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185. Swedek,Boguslaw A.; Birang,Manoocher, System for endpoint detection with polishing pad.

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186. Cangshan Xu ; Brian S. Lombardo, Unsupported chemical mechanical polishing belt.

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187. Travis, Glenn W., Wafer carrier head assembly.

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188. Hardy L. Charles ; Trice Jennifer L., Working liquids and methods for modifying structured wafers suited for semiconductor fabrication.

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