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[미국특허] Atomic layer epitaxy of compound semiconductor 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-021/20
출원번호 US-0910766 (1992-07-08)
우선권정보 JP-0172013 (1991-07-12)
발명자 / 주소
  • Sakuma Yoshiki (Kawasaki JPX) Ozeki Masashi (Kawasaki JPX) Ohtuka Nobuyuki (Kawasaki JPX) Kodama Kunihiko (Takarazuka JPX)
출원인 / 주소
  • Fujitsu Limited (Kawasaki JPX 03)
인용정보 피인용 횟수 : 133  인용 특허 : 4

초록 ▼

A heterojunction between In-containing compound semiconductors in which the interface thereof is controlled at an atom level is provided by a process of atomic layer epitaxy (ALE) in which hydrogen gas is utilized as a carrier gas and as a purge gas for a separation of source gases. The time for whi

대표청구항 ▼

A process for growing a crystalline compound semiconductor, comprising the steps of: heating a crystalline substrate to a predetermined temperature in a vacuum chamber, and at said predetermined temperature of the crystalline substrate and in the following sequence: supplying a first source gas for

이 특허에 인용된 특허 (4) 인용/피인용 타임라인 분석

  1. Arimoto Satoshi (Itami JPX), Crystal growth method.
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  2. Matsumoto Fumio (Miyagi JPX), Method for epitaxial growth of compound semiconductor using MOCVD with molecular layer epitaxy.
    상세보기
  3. Ban Yuzaburo (Osaka JPX) Manno Masaya (Kadoma JPX) Kubo Minoru (Katano JPX) Morisaki Mototsugu (Osaka JPX) Ogura Mototsugu (Takaichi JPX), Method of laser enhanced vapor phase growth for compound semiconductor.
    상세보기
  4. Akasaki Isamu (Nagoya JPX) Sawaki Nobuhiko (Nagoya JPX), Process for growing III-V compound semiconductors on sapphire using a buffer layer.
    상세보기

이 특허를 인용한 특허 (133) 인용/피인용 타임라인 분석

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해당 특허가 속한 카테고리에서 활용도가 높은 상위 5개 콘텐츠를 보여줍니다.
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