초록 ▼

A multi-switch processing methodology and a multi-channel time-division plasma chopping device (10) for in-situ plasma-assisted semiconductor wafer processing associated with a plasma and/or photochemical processing equipment. The device (10) comprises a main transfer channel (72) associated with th

A multi-switch processing methodology and a multi-channel time-division plasma chopping device (10) for in-situ plasma-assisted semiconductor wafer processing associated with a plasma and/or photochemical processing equipment. The device (10) comprises a main transfer channel (72) associated with the processing reactor for transferring process gas and activated plasma mixtures into the reactor. A plurality of gas discharge channels (18, 22, 26, and 30) associate with the main transfer channel (72) for independently directing various gases and activated plasma combinations to main transfer channel (72). Process excitation sources (16, 20, 24 and 28) associate with at least one of said gas discharge or activation channels to independently and selectively activate process gases and to control gas activation and flow from the discharge channels to the main transfer channel (72). The method of the present invention performs multi-channel time-division plasma chopping by independently and selectively generating plasma or activated species using a plurality of remote plasma generation process energy sources (16, 20, 24, and 28) associated with the semiconductor wafer fabrication reactor.

대표청구항 ▼

A device for multi-switch wafer processing and time-division plasma chopping in a multi-channel wafer processing equipment, said device comprising: a main transfer channel for transferring mixture of process gases and activated plasma streams into said reactor; a plurality of discharge or activation

A device for multi-switch wafer processing and time-division plasma chopping in a multi-channel wafer processing equipment, said device comprising: a main transfer channel for transferring mixture of process gases and activated plasma streams into said reactor; a plurality of discharge or activation channels interconnected together and associated with said main transfer channel for directing various process gas and selectively-produced plasma mixtures to said main transfer channel; and a plurality of process energy or excitation sources, at least some of said excitation sources associated with said gas discharge channels for independently controlling plasma generation within the associated discharge channels wherein said excitation sources generate energy at more than two discrete levels.