초록 ▼

A method for electro-optic sampling measurement of electrical signals in integrated circuits, capable of improving the reproducibility of the measurements and calibrating the voltage accurately. The changes of beam intensity of a laser beam reflected from an electro-optic probe is measured by using

A method for electro-optic sampling measurement of electrical signals in integrated circuits, capable of improving the reproducibility of the measurements and calibrating the voltage accurately. The changes of beam intensity of a laser beam reflected from an electro-optic probe is measured by using a low frequency signal of a known voltage level to determine a relationship between the changes of beam intensity and gaps between the electro-optic probe and the integrated circuit, then a proportionality of the change of beam intensity and an absolute voltage level for a desired gap is determined according to the determined relationship. Then, the change of beam of intensity at a desired measurement position with a desired gap is measured by using a high frequency signal and the absolute voltage level of the high frequency signal is determined according to the measured change of beam intensity and the determined proportionality. The electro-optic probe is positioned by first bringing the electro-optic probe into a contact with the integrated circuit to detect a contact position, and then moving the electro-optic probe away from the integrated circuit to provide a desired gap with respect to the detected contact position regarded as a reference point.

대표청구항 ▼

A method of electro-optic sampling measurement of electrical signals in an integrated circuit, comprising the steps of: (a) measuring changes of beam intensity of a laser beam reflected from an electro-optic probe placed in an electric field produced from a conductor at a preliminary measurement pos

A method of electro-optic sampling measurement of electrical signals in an integrated circuit, comprising the steps of: (a) measuring changes of beam intensity of a laser beam reflected from an electro-optic probe placed in an electric field produced from a conductor at a preliminary measurement position on the integrated circuit while a low frequency signal of a known voltage level is applied to the conductor; (b) determining a relationship between the changes of beam intensity measured at step (a) and gap between the electro-optic probe and the integrated circuit with which the changes of beam intensity are measure at step (a), for said known voltage level; (c) determining a proportionality of the change of beam intensity and an absolute voltage level for a desired gap according to the relationship determined at step (b); (d) measuring a change of beam intensity of a laser beam reflected from the electro-optic probe placed in an electric field produced at a desired measurement position on the integrated circuit with the desired gap the between the electro-optic probe and the desired gap between the electro-optic probe and the integrated circuit, while a high frequency signal of unknown voltage level is applied to a conductor connected with the desired measurement position on the integrated circuit; and (e) determining the absolute voltage level of the high frequency signal at the desired measurement position according to the change of beam intensity measure at step (d) and the proportionality determined at step (c).