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Low temperature crystallization and patterning of amorphous silicon films on electrically insulating substrates 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-021/324
  • B05D-003/06
출원번호 US-0025710 (1993-03-03)
발명자 / 주소
  • Fonash Stephen J. (State College PA) Liu Gang (Sunnyvale CA)
출원인 / 주소
  • The Penn State Research Foundation (University Park PA 02)
인용정보 피인용 횟수 : 350  인용 특허 : 0

초록 ▼

A fabrication process polycrystalline silicon thin film transistors commences with the deposition of an ultra-thin nucleating-site forming layer onto the surface of an insulating substrate (e.g., 7059 glass). Next, an amorphous silicon film is deposited thereover and the combined films are annealed

대표청구항 ▼

A method for producing a polycrystalline silicon film on an electrically insulating substrate, comprising the steps of: (a) depositing on said electrically insulating substrate a thin discontinuous film of a nucleating site forming material; (b) depositing an amorphous silicon film on said discontin

이 특허를 인용한 특허 (350)

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  128. Park, Seung-Kyu; Lee, Ki-Yong; Seo, Jin-Wook; Jeong, Min-Jae; Chung, Yun-Mo; Son, Yong-Duck; So, Byung-Soo; Park, Byoung-Keon; Lee, Kil-Won; Lee, Dong-Hyun; Park, Jong-Ryuk; Lee, Tak-Young; Jung, Jae-Wan, Method of forming a polycrystalline silicon layer and method of manufacturing thin film transistor.
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  129. Nakajima, Setsuo; Ohtani, Hisashi, Method of forming a semiconductor device using a group XV element for gettering by means of infrared light.
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  130. Zhang Hongyong (Kanagawa JPX) Uochi Hideki (Kanagawa JPX) Takayama Toru (Kanagawa JPX) Takemura Yasuhiko (Kanagawa JPX) Yamamoto Mutsuo (Kanagawa JPX), Method of forming a thin film transistor.
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  131. Zhang, Hongyong; Uochi, Hideki; Miyanaga, Akira; Ohtani, Hisashi, Method of forming semiconductor device by crystallizing amorphous silicon and forming crystallization promoting material in the same chamber.
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  132. Shunpei Yamazaki JP; Mitsunori Sakama JP; Yasuhiko Takemura JP, Method of making crystal silicon semiconductor and thin film transistor.
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  133. Takemura Yasuhiko (Kanagawa JPX), Method of making thin film transistor using lateral crystallization.
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  134. Hisashi Ohtani JP; Akiharu Miyanaga JP; Junichi Takeyama JP, Method of manufacturing a semiconductor device.
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  135. Isobe,Atsuo; Arao,Tatsuya, Method of manufacturing a semiconductor device.
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  136. Ohtani Hisashi,JPX ; Miyanaga Akiharu,JPX ; Takeyama Junichi,JPX, Method of manufacturing a semiconductor device.
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  137. Ohtani Hisashi,JPX ; Miyanaga Akiharu,JPX ; Takeyama Junichi,JPX, Method of manufacturing a semiconductor device.
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  138. Takemura, Yasuhiko; Zhang, Hongyong; Teramoto, Satoshi, Method of manufacturing a semiconductor device.
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  139. Yamamoto Yoshitaka,JPX ; Suzawa Hideomi,JPX ; Awane Katunobu,JPX ; Funada Fumiaki,JPX ; Yamazaki Shunpei,JPX, Method of manufacturing a semiconductor device.
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  140. Yamazaki,Shunpei; Ohtani,Hisashi; Hamatani,Toshiji, Method of manufacturing a semiconductor device.
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  141. Zhang Hongyong,JPX ; Takayama Toru,JPX ; Takemura Yasuhiko,JPX, Method of manufacturing a semiconductor device.
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  142. Zhang, Hongyong; Kusumoto, Naoto, Method of manufacturing a semiconductor device.
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  143. Yamazaki, Shunpei; Teramoto, Satoshi; Kusumoto, Naoto; Ohnuma, Hideto, Method of manufacturing a semiconductor device and manufacturing system thereof.
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  144. Yamazaki, Shunpei; Teramoto, Satoshi; Kusumoto, Naoto; Ohnuma, Hideto, Method of manufacturing a semiconductor device and manufacturing system thereof.
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  145. Mitsuki, Toru; Shichi, Takeshi; Maekawa, Shinji; Shibata, Hiroshi; Miyanaga, Akiharu, Method of manufacturing a semiconductor device having a crystallized semiconductor film.
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  146. Zhang, Hongyong; Takemura, Yasuhiko; Konuma, Toshimitsu; Ohnuma, Hideto; Yamaguchi, Naoaki; Suzawa, Hideomi; Uochi, Hideki, Method of manufacturing a semiconductor device having lightly-doped drain (LDD) regions.
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  147. Zhang, Hongyong; Takayama, Toru; Takemura, Yasuhiko, Method of manufacturing a semiconductor device that includes heating the gate insulating film.
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  148. Yamazaki,Shunpei; Shibata,Hiroshi; Tanaka,Koichiro; Hiroki,Masaaki; Akiba,Mai, Method of manufacturing a semiconductor device that includes patterning sub-islands.
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  149. Isobe, Atsuo; Arao, Tatsuya, Method of manufacturing a semiconductor device, utilizing a laser beam for crystallization.
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  150. Shunpei Yamazaki JP, Method of manufacturing a semiconductor film and method of manufacturing a semiconductor device.
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  151. Yamazaki, Shunpei, Method of manufacturing a semiconductor film and method of manufacturing a semiconductor device.
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  152. Yamazaki,Shunpei, Method of manufacturing a semiconductor film and method of manufacturing a semiconductor device by transferring crystallization promoting material in the first semiconductor film to the second semico.
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  153. Zhang, Hongyong; Uochi, Hideki; Takayama, Toru; Fukunaga, Takeshi; Takemura, Yasuhiko, Method of manufacturing a thin film transistor device.
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  154. Murley, Darren T.; Trainor, Michael J., Method of manufacturing a transistor.
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  155. Hiroki, Masamitsu; Takemura, Yasuhiko; Yamamoto, Mutsuo; Yamaguchi, Naoaki; Teramoto, Satoshi, Method of manufacturing an active matrix type device.
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  156. Ohtani Hisashi,JPX, Method of manufacturing semiconductor device.
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  157. Zhang Hongyong,JPX ; Takayama Toru,JPX ; Takemura Yasuhiko,JPX ; Miyanaga Akiharu,JPX ; Ohtani Hisashi,JPX ; Takeyama Junichi,JPX, Method of preparing a semiconductor having a controlled crystal orientation.
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  158. Zhang, Hongyong; Takayama, Toru; Takemura, Yasuhiko; Miyanaga, Akiharu; Ohtani, Hisashi; Takeyama, Junichi, Method of preparing a semiconductor having controlled crystal orientation.
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  159. Shunpei Yamazaki JP; Hisashi Ohtani JP, Method of producing crystalline semiconductor.
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  160. Zhang Hongyong,JPX ; Uochi Hideki,JPX ; Miyanaga Akira,JPX ; Ohtani Hisashi,JPX, Method of promoting crystallization of an amorphous semiconductor film using organic metal CVD.
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  161. Fonash Stephen J. ; Kalkan A. Kaan, Nanostructure tailoring of material properties using controlled crystallization.
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  162. Asami, Yoshinobu, Nonvolatile semiconductor storage device with floating gate electrode and control gate electrode.
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  163. Naoaki Yamaguchi JP; Koichiro Tanaka JP; Satoshi Teramoto JP, Optical processing apparatus and optical processing method.
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  164. Yamaguchi, Naoaki; Tanaka, Koichiro; Teramoto, Satoshi, Optical processing apparatus and optical processing method.
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  165. Yamaguchi,Naoaki; Tanaka,Koichiro; Teramoto,Satoshi, Optical processing apparatus and optical processing method.
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  166. Yamaguchi Naoaki,JPX ; Tanaka Koichiro,JPX ; Teramoto Satoshi,JPX, Optical processing method with control of the illumination energy of laser light.
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  167. Lee, Won-Kyu; Yang, Tae-Hoon; Choi, Bo-Kyung; Choo, Byoung-Kwon; Cho, Kyu-Sik; Park, Yong-Hwan; Moon, Sang-Ho; Shin, Min-Chul; Lee, Yun-Gyu; Choi, Joon-Hoo, Organic light emitting display and method of fabricating the same.
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  168. Yamazaki Shunpei,JPX, Photoelectric conversion device and method manufacturing same.
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  169. Seong Moh Seo KR, Polysilicon thin film transistor and method of manufacturing the same.
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  170. Ohtani Hisashi,JPX ; Adachi Hiroki,JPX, Process for crystallizing an amorphous silicon film and apparatus for fabricating the same.
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  171. Takemura Yasuhiko,JPX ; Adachi Hiroki,JPX, Process for fabricating a thin film transistor.
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  172. Zhang Hongyong,JPX ; Uochi Hideki,JPX ; Takayama Toru,JPX ; Yamazaki Shunpei,JPX ; Takemura Yasuhiko,JPX, Process for fabricating a thin film transistor semiconductor device.
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  173. Takayama, Toru; Zhang, Hongyong; Yamazaki, Shunpei; Takemura, Yasuhiko, Process for fabricating semiconductor and process for fabricating semiconductor device.
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  174. Ohtani Hisashi,JPX ; Fukunaga Takeshi,JPX ; Miyanaga Akiharu,JPX, Process for fabricating semiconductor device.
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  175. Ohtani Hisashi,JPX ; Fukunaga Takeshi,JPX ; Miyanaga Akiharu,JPX, Process for fabricating semiconductor device.
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  176. Ohtani Hisashi,JPX ; Fukunaga Takeshi,JPX ; Miyanaga Akiharu,JPX, Process for fabricating semiconductor device.
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  177. Ohtani, Hisashi; Fukunaga, Takeshi; Miyanaga, Akiharu, Process for fabricating semiconductor device.
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  178. Ohtani, Hisashi; Fukunaga, Takeshi; Miyanaga, Akiharu, Process for fabricating semiconductor device.
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  179. Ohtani,Hisashi; Fukunaga,Takeshi; Miyanaga,Akiharu, Process for fabricating semiconductor device.
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  180. Takemura Yasuhiko,JPX, Process for fabricating semiconductor device.
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  181. Ohtani, Hisashi; Fukunaga, Takeshi; Miyanaga, Akiharu, Process for fabricating thin film transistors.
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  182. Takayama Toru (Kanagawa JPX) Zhang Hongyong (Kanagawa JPX) Takemura Yasuhiko (Kanagawa JPX), Process of fabricating a semiconductor device in which one portion of an amorphous silicon film is thermally crystallize.
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  183. Kusumoto Naoto,JPX ; Takemura Yasuhiko,JPX ; Ohtani Hisashi,JPX, Production method for a thin film semiconductor device with an alignment marker made out of the same layer as the active.
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  184. Miyanaga, Akiharu; Mukao, Kyouichi, Program for controlling laser apparatus and recording medium for recording program for controlling laser apparatus and capable of being read out by computer.
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  185. Miyanaga, Akiharu; Mukao, Kyouichi, Program for controlling laser apparatus and recording medium for recording program for controlling laser apparatus and capable of being read out by computer.
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  186. Miyanaga,Akiharu; Mukao,Kyouichi, Program for controlling laser apparatus and recording medium for recording program for controlling laser apparatus and capable of being read out by computer.
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  187. Maekawa Masashi ; Nakata Yukihiko, Selected site, metal-induced, continuous crystallization method.
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  188. Maekawa Masashi, Selective silicide thin-film transistor and method for same.
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  189. Maekawa Masashi, Selective silicide thin-film transistor having polysilicon active layers with crystallizing metal agent introduced only in the source/drain regions.
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  190. Koyama Jun,JPX ; Takemura Yasuhiko,JPX ; Hayakawa Masahiko,JPX ; Yamazaki Shunpei,JPX ; Miyanaga Akiharu,JPX ; Ohtani Hisashi,JPX, Semiconductor active matrix circuit.
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  191. Yamazaki, Shunpei; Teramoto, Satoshi; Koyama, Jun; Ogata, Yasushi; Hayakawa, Masahiko; Osame, Mitsuaki; Ohtani, Hisashi; Hamatani, Toshiji, Semiconductor active region of TFTs having radial crystal grains through the whole area of the region.
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  192. Hongyong Zhang JP; Hideki Uochi JP; Toru Takayama JP; Shunpei Yamazaki JP; Yasuhiko Takemura JP, Semiconductor and process for fabricating the same.
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  193. Zhang Hongyong,JPX ; Uochi Hideki,JPX ; Takayama Toru,JPX ; Yamazaki Shunpei,JPX ; Takemura Yasuhiko,JPX, Semiconductor and process for fabricating the same.
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  194. Zhang Hongyong,JPX ; Takayama Toru,JPX ; Takemura Yasuhiko,JPX, Semiconductor circuit and method of fabricating the same.
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  195. Zhang, Hongyong; Takayama, Toru; Takemura, Yasuhiko, Semiconductor circuit and method of fabricating the same.
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  196. Yamazaki Shunpei,JPX ; Teramoto Satoshi,JPX, Semiconductor circuit for electro-optical device and method of manufacturing the same.
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  197. Akiharu Mitanaga JP; Hisashi Ohtani JP; Satoshi Teramoto JP, Semiconductor device.
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  198. Mitanaga Akiharu,JPX ; Ohtani Hisashi,JPX ; Teramoto Satoshi,JPX, Semiconductor device.
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  199. Yamazaki, Shunpei; Yamaguchi, Naoaki; Nakajima, Setsuo, Semiconductor device.
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  200. Zhang, Hongyong; Takayama, Toru; Takemura, Yasuhiko; Miyanaga, Akiharu, Semiconductor device and fabrication method of the same.
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  201. Yamazaki Shunpei,JPX ; Teramoto Satoshi,JPX ; Koyama Jun,JPX ; Ogata Yasushi,JPX ; Hayakawa Masahiko,JPX ; Osame Mitsuaki,JPX, Semiconductor device and fabrication method thereof.
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  202. Yamazaki, Shunpei; Teramoto, Satoshi, Semiconductor device and fabrication method thereof.
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  203. Yamazaki, Shunpei; Teramoto, Satoshi; Koyama, Jun; Ogata, Yasushi; Hayakawa, Masahiko; Osame, Mitsuaki, Semiconductor device and fabrication method thereof.
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  204. Shunpei Yamazaki JP, Semiconductor device and its manufacturing method.
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  205. Shunpei Yamazaki JP; Satoshi Teramoto JP; Jun Koyama JP; Yasushi Ogata JP; Masahiko Hayakawa JP; Mitsuaki Osame JP; Hisashi Ohtani JP; Toshiji Hamatani JP, Semiconductor device and its manufacturing method.
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  206. Yamazaki Shunpei,JPX, Semiconductor device and its manufacturing method.
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  207. Yamazaki, Shunpei; Teramoto, Satoshi; Koyama, Jun; Ogata, Yasushi; Hayakawa, Masahiko; Osame, Mitsuaki; Ohtani, Hisashi; Hamatani, Toshiji, Semiconductor device and its manufacturing method.
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  208. Yamazaki, Shunpei; Teramoto, Satoshi; Koyama, Jun; Ogata, Yasushi; Hayakawa, Masahiko; Osame, Mitsuaki; Ohtani, Hisashi; Hamatani, Toshiji, Semiconductor device and its manufacturing method.
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  209. Yamazaki,Shunpei; Teramoto,Satoshi; Koyama,Jun; Ogata,Yasushi; Hayakawa,Masahiko; Osame,Mitsuaki; Ohtani,Hisashi; Hamatani,Toshiji, Semiconductor device and its manufacturing method.
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  210. Kokubo, Chiho; Shiga, Aiko; Tanada, Yoshifumi; Yamazaki, Shunpei, Semiconductor device and manufacturing method therefor.
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  211. Tanaka, Koichiro; Ohnuma, Hideto, Semiconductor device and manufacturing method thereof.
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  212. Zhang, Hongyong, Semiconductor device and manufacturing method thereof.
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  213. Yamazaki, Shunpei; Teramoto, Satoshi; Koyama, Jun; Ogata, Yasushi; Hayakawa, Masahiko; Osame, Mitsuaki; Ohtani, Hisashi; Hamatani, Toshiji, Semiconductor device and method for fabricating the same.
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  214. Yamazaki, Shunpei; Teramoto, Satoshi; Koyama, Jun; Ogata, Yasushi; Hayakawa, Masahiko; Osame, Mitsuaki; Ohtani, Hisashi; Hamatani, Toshiji, Semiconductor device and method for fabricating the same.
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  215. Yamazaki,Shunpei; Teramoto,Satoshi; Koyama,Jun; Ogata,Yasushi; Hayakawa,Masahiko; Osame,Mitsuaki; Ohtani,Hisashi; Hamatani,Toshiji, Semiconductor device and method for fabricating the same.
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  216. Satoshi Teramoto JP, Semiconductor device and method for forming the same.
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  217. Takemura, Yasuhiko; Zhang, Hongyong; Teramoto, Satoshi, Semiconductor device and method for forming the same.
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  218. Takemura, Yasuhiko; Zhang, Hongyong; Teramoto, Satoshi, Semiconductor device and method for forming the same.
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  219. Takemura, Yasuhiko; Zhang, Hongyong; Teramoto, Satoshi, Semiconductor device and method for forming the same.
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  220. Teramoto, Satoshi, Semiconductor device and method for forming the same.
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  221. Yamazaki Shunpei,JPX ; Zhang Hongyong,JPX, Semiconductor device and method for forming the same.
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  222. Yamazaki, Shunpei; Zhang, Hongyong; Takemura, Yasuhiko, Semiconductor device and method for forming the same.
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  223. Yamazaki,Shunpei; Zhang,Hongyong, Semiconductor device and method for forming the same.
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  224. Yamazaki,Shunpei; Zhang,Hongyong, Semiconductor device and method for forming the same.
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  225. Koyama Jun,JPX ; Suzawa Hideomi,JPX ; Teramoto Satoshi,JPX, Semiconductor device and method for its fabrication.
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  226. Zhang Hongyong,JPX ; Takemura Yasuhiko,JPX ; Takayama Toru,JPX ; Miyanaga Akiharu,JPX ; Ohtani Hisashi,JPX ; Takeyama Junichi,JPX, Semiconductor device and method for its preparation.
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  227. Zhang, Hongyong; Takayama, Toru; Takemura, Yasuhiko; Miyanaga, Akiharu; Ohtani, Hisashi; Takeyama, Junichi, Semiconductor device and method for its preparation.
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  228. Zhang,Hongyong; Takayama,Toru; Takemura,Yasuhiko; Miyanaga,Akiharu; Ohtani,Hisashi; Takeyama,Junichi, Semiconductor device and method for its preparation.
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  229. Adachi Hiroki,JPX ; Takenouchi Akira,JPX ; Fukada Takeshi,JPX ; Uehara Hiroshi,JPX ; Takemura Yasuhiko,JPX, Semiconductor device and method for manufacturing the same.
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  230. Adachi Hiroki,JPX ; Takenouchi Akira,JPX ; Fukada Takeshi,JPX ; Uehara Hiroshi,JPX ; Takemura Yasuhiko,JPX, Semiconductor device and method for manufacturing the same.
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  231. Akiharu Miyanaga JP; Hisashi Ohtani JP; Satoshi Teramoto JP, Semiconductor device and method for manufacturing the same.
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  232. Hiroki Adachi JP; Akira Takenouchi JP; Takeshi Fukada JP; Hiroshi Uehara JP; Yasuhiko Takemura JP, Semiconductor device and method for manufacturing the same.
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  233. Hongyong Zhang JP; Hideki Uochi JP; Toru Takayama JP; Takeshi Fukunaga JP; Yasuhiko Takemura JP, Semiconductor device and method for manufacturing the same.
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  234. Miyanaga, Akiharu; Ohtani, Hisashi; Takemura, Yasuhiko, Semiconductor device and method for manufacturing the same.
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  235. Miyanaga, Akiharu; Ohtani, Hisashi; Takemura, Yasuhiko, Semiconductor device and method for manufacturing the same.
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  236. Miyanaga,Akiharu; Ohtani,Hisashi; Takemura,Yasuhiko, Semiconductor device and method for manufacturing the same.
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  237. Takemura Yasuhiko,JPX, Semiconductor device and method for manufacturing the same.
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  238. Takemura, Yasuhiko, Semiconductor device and method for manufacturing the same.
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  239. Takemura, Yasuhiko, Semiconductor device and method for manufacturing the same.
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  240. Takemura, Yasuhiko; Zhang, Hongyong; Konuma, Toshimitsu, Semiconductor device and method for manufacturing the same.
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  241. Takemura,Yasuhiko, Semiconductor device and method for manufacturing the same.
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  242. Takemura,Yasuhiro, Semiconductor device and method for manufacturing the same.
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  243. Zhang Hongyong,JPX ; Uochi Hideki,JPX ; Takayama Toru,JPX ; Fukunaga Takeshi,JPX ; Takemura Yasuhiko,JPX, Semiconductor device and method for manufacturing the same.
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  244. Zhang, Hongyong; Uochi, Hideki; Takayama, Toru; Fukunaga, Takeshi; Takemura, Yasuhiko, Semiconductor device and method for manufacturing the same.
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  245. Zhang, Hongyong; Uochi, Hideki; Takayama, Toru; Fukunaga, Takeshi; Takemura, Yasuhiko, Semiconductor device and method for manufacturing the same.
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  246. Yamazaki, Shunpei; Yamaguchi, Naoaki; Nakajima, Setsuo, Semiconductor device and method for producing it.
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  247. Ohtani Hisashi,JPX ; Takemura Yasuhiko,JPX ; Miyanaga Akiharu,JPX ; Yamazaki Shunpei,JPX, Semiconductor device and method for producing the same.
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  248. Yamazaki Shunpei,JPX ; Ohtani Hisashi,JPX ; Miyanaga Akiharu,JPX ; Teramoto Satoshi,JPX, Semiconductor device and method for producing the same.
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  249. Yamazaki Shunpei,JPX ; Ohtani Hisashi,JPX ; Miyanaga Akiharu,JPX ; Teramoto Satoshi,JPX, Semiconductor device and method for producing the same.
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  250. Yamazaki, Shunpei; Teramoto, Satoshi; Koyama, Jun; Ogata, Yasushi; Hayakawa, Masahiko; Osame, Mitsuaki; Ohtani, Hisashi; Hamatani, Toshiji, Semiconductor device and method of fabricating same.
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  251. Yamazaki,Shunpei; Teramoto,Satoshi; Koyama,Jun; Ogata,Yasushi; Hayakawa,Masahiko; Osame,Mitsuaki; Ohtani,Hisashi; Hamatani,Toshiji, Semiconductor device and method of fabricating same.
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  252. Shunpei Yamazaki JP; Yasuhiko Takemura JP; Hongyong Zhang JP, Semiconductor device and method of fabricating the same.
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  253. Takemura, Yasuhiko, Semiconductor device and method of fabricating the same.
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  254. Takemura,Yasuhiko, Semiconductor device and method of fabricating the same.
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  255. Yamazaki Shunpei,JPX ; Takemura Yasuhiko,JPX ; Zhang Hongyong,JPX, Semiconductor device and method of fabricating the same.
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  256. Yamazaki Shunpei,JPX ; Takemura Yasuhiko,JPX ; Zhang Hongyong,JPX, Semiconductor device and method of fabricating the same.
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  257. Yamazaki Shunpei,JPX ; Zhang Hongyong,JPX ; Takemura Yasuhiko,JPX, Semiconductor device and method of fabricating the same.
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  258. Zhang, Hongyong; Takemura, Yasuhiko; Konuma, Toshimitsu; Ohnuma, Hideto; Yamaguchi, Naoaki; Suzawa, Hideomi; Uochi, Hideki, Semiconductor device and method of manufacture thereof.
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  259. Zhang, Hongyong; Takemura, Yasuhiko; Konuma, Toshimitsu; Ohnuma, Hideto; Yamaguchi, Naoaki; Suzawa, Hideomi; Uochi, Hideki, Semiconductor device and method of manufacture thereof.
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  260. Zhang, Hongyong; Takemura, Yasuhiko; Konuma, Toshimitsu; Ohnuma, Hideto; Yamaguchi, Naoaki; Suzawa, Hideomi; Uochi, Hideki, Semiconductor device and method of manufacture thereof.
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  261. Zhang,Hongyong; Takemura,Yasuhiko; Konuma,Toshimitsu; Ohnuma,Hideto; Yamaguchi,Naoaki; Suzawa,Hideomi; Uochi,Hideki, Semiconductor device and method of manufacture thereof.
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  262. Miyanaga, Akiharu; Ohtani, Hisashi; Takemura, Yasuhiko, Semiconductor device and method of manufacturing the same.
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  263. Yamazaki, Shunpei, Semiconductor device and method of manufacturing the same.
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  264. Yamazaki, Shunpei; Hayakawa, Masahiko, Semiconductor device and method of manufacturing the same.
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  265. Zhang Hongyong,JPX, Semiconductor device and method of manufacturing the same.
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  266. Zhang Hongyong,JPX, Semiconductor device and method of manufacturing the same.
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  267. Zhang, Hongyong, Semiconductor device and method of manufacturing the same.
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  268. Zhang,Hongyong, Semiconductor device and method of manufacturing the same.
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  269. Takemura, Yasuhiko; Adachi, Hiroki, Semiconductor device and process for fabricating the same.
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  270. Takemura, Yasuhiko; Adachi, Hiroki, Semiconductor device and process for fabricating the same.
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  271. Takemura,Yasuhiko; Adachi,Hiroki, Semiconductor device and process for fabricating the same.
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  272. Zhang Hongyong,JPX ; Ohnuma Hideto,JPX ; Takemura Yasuhiko,JPX, Semiconductor device and process for fabricating the same.
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  300. Yamazaki, Shunpei, Semiconductor device including semiconductor circuit made from semiconductor element and manufacturing method thereof.
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  317. Maekawa, Masashi; Nakata, Yukihiko, Single crystal TFT from continuous transition metal delivery method.
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  318. Masashi Maekawa JP; Yukihiko Nakata, Single crystal TFT from continuous transition metal delivery method.
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  319. Konuma,Toshimitsu, Solution applying apparatus and method.
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  320. Konuma Toshimitsu,JPX, Solution applying method.
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  327. Seo, Jin-Wook; Lee, Ki-Yong; Yang, Tae-Hoon; Park, Byoung-Keon, Thin film transistor and method of fabricating the same.
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  328. Yasuhiko Takemura JP; Hongyong Zhang JP; Satoshi Teramoto JP, Thin film transistor having enhanced field mobility.
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  329. Uochi Hideki,JPX ; Takemura Yasuhiko,JPX, Thin film transistor including a catalytic element for promoting crystallization of a semiconductor film.
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  330. Zhang Hongyong,JPX ; Takayama Toru,JPX ; Takemura Yasuhiko,JPX, Thin film transistor using a semiconductor film.
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  331. Yamazaki Shunpei,JPX ; Teramoto Satoshi,JPX, Thin film type monolithic semiconductor device.
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  334. Yamazaki Shunpei,JPX ; Arai Yasuyuki,JPX, Thin-film photoelectric conversion device and a method of manufacturing the same.
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  335. Yamazaki,Shunpei; Arai,Yasuyuki, Thin-film photoelectric conversion device and a method of manufacturing the same.
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  336. Zhang Hongyong,JPX ; Takayama Toru,JPX ; Takemura Yasuhiko,JPX, Thin-film transistor and fabrication method for same.
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  337. Ohnuma Hideto,JPX ; Yamazaki Shunpei,JPX, Thin-film transistor and semiconductor device using thin-film transistors.
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  338. Ohnuma, Hideto; Yamazaki, Shunpei, Thin-film transistor and semiconductor device using thin-film transistors.
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  340. Maekawa Masashi, Thin-film transistor polycrystalline film formation by nickel induced, rapid thermal annealing method.
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  341. Uochi Hideki,JPX ; Takemura Yasuhiko,JPX, Transistor and method of forming the same.
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  342. Zhang Hongyong (Kanagawa JPX) Takayama Toru (Kanagawa JPX) Takemura Yasuhiko (Kanagawa JPX), Transistor and process for fabricating the same.
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  343. Zhang Hongyong,JPX ; Takayama Toru,JPX ; Takemura Yasuhiko,JPX, Transistor and process for fabricating the same.
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  344. Zhang Hongyong,JPX ; Takayama Toru,JPX ; Takemura Yasuhiko,JPX, Transistor and process for fabricating the same.
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  345. Zhang, Hongyong; Takayama, Toru; Takemura, Yasuhiko, Transistor and process for fabricating the same.
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  347. Zhang Hongyong,JPX ; Takayama Toru,JPX ; Takemura Yasuhiko,JPX ; Miyanaga Akiharu,JPX ; Ohtani Hisashi,JPX, Transistor and semiconductor device having columnar crystals.
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  348. Zhang, Hongyong; Takayama, Toru; Takemura, Yasuhiko; Miyanaga, Akiharu; Ohtani, Hisashi, Transistor and semiconductor device having columnar crystals.
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  349. Hideki Uochi JP; Yasuhiko Takemura JP, Transistor device and method of forming the same.
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  350. Nanba Norihiro,JPX, Zoom lens and optical apparatus having the same.
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