이 특허를 인용한 특허 (110)

1. Chen, Chen-An; Gelatos, Avgerinos; Yang, Michael X.; Xi, Ming; Hytros, Mark M., Apparatus and method for plasma assisted deposition.

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2. Chen,Chen An; Gelatos,Avgerinos; Yang,Michael X.; Xi,Ming; Hytros,Mark M., Apparatus and method for plasma assisted deposition.

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3. Kim, Sam H.; Hosokawa, Akihiro; Suh, Dong Choon, Apparatus and method for uniform substrate heating and contaminate collection.

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4. Chung,Hua; Chen,Ling; Yu,Jick; Chang,Mei, Apparatus for integration of barrier layer and seed layer.

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5. Chin,Barry L.; Mak,Alfred W.; Lei,Lawrence Chung Lai; Xi,Ming; Chung,Hua; Lai,Ken Kaung; Byun,Jeong Soo, Atomic layer deposition apparatus.

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6. Chung, Hua; Wang, Rongjun; Maity, Nirmalya, Atomic layer deposition of barrier materials.

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7. Wei X. Yang ; Thomas E. Nohava ; Scott A. McPherson ; Robert C. Torreano ; Subash Krishnankutty ; Holly A. Marsh, Back-illuminated heterojunction photodiode.

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8. Cole, Barrett E.; Marta, Terry, Beam intensity detection in a cavity ring down sensor.

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9. Kori, Moris; Mak, Alfred W.; Byun, Jeong Soo; Lei, Lawrence Chung-Lai; Chung, Hua; Sinha, Ashok; Xi, Ming, Bifurcated deposition process for depositing refractory metal layers employing atomic layer deposition and chemical vapor deposition techniques.

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10. Tischler, Michael A.; Kuech, Thomas F.; Vaudo, Robert P., Bulk single crystal gallium nitride and method of making same.

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11. Tischler, Michael A.; Kuech, Thomas F.; Vaudo, Robert P., Bulk single crystal gallium nitride and method of making same.

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12. Tischler,Michael A.; Kuech,Thomas F.; Vaudo,Robert P., Bulk single crystal gallium nitride and method of making same.

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13. Cole, Barrett E., CRDS mirror for normal incidence fiber optic coupling.

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14. Cole, Barrett E., Cavity enhanced photo acoustic gas sensor.

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15. Cole, Barrett E., Cavity ring-down spectrometer having mirror isolation.

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16. Inagawa,Makoto; Hosokawa,Akihiro, Chamber for uniform substrate heating.

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17. Shang, Quanyuan; Kardokus, Janine; Hosokawa, Akihiro, Chamber for uniform substrate heating.

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18. Shang,Quanyuan; Kardokus,Janine; Hosokawa,Akihiro, Chamber for uniform substrate heating.

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19. Cox, James Allen; Cole, Barrett E., Compact gas sensor using high reflectance terahertz mirror and related system and method.

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20. Itaya Kazuhiko,JPX ; Fujimoto Hidetoshi,JPX ; Nishio Johji,JPX ; Suzuki Mariko,JPX ; Sugiura Lisa,JPX, Compound semiconductor device formed of nitrogen-containing gallium compound such as GaN, AlGaN or InGaN.

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21. Itaya Kazuhiko,JPX ; Fujimoto Hidetoshi,JPX ; Nishio Johji,JPX ; Suzuki Mariko,JPX ; Sugiura Lisa,JPX, Compound semiconductor device formed of nitrogen-containing gallium compound such as gan, algan or ingan.

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22. Yang, Michael X.; Xi, Ming, Cyclical deposition of a variable content titanium silicon nitride layer.

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23. Wang, Shulin; Kroemer, Ulrich; Luo, Lee; Chen, Aihua; Li, Ming, Cyclical deposition of tungsten nitride for metal oxide gate electrode.

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24. Wang,Shulin; Kroemer,Ulrich; Luo,Lee; Chen,Aihua; Li,Ming, Cyclical deposition of tungsten nitride for metal oxide gate electrode.

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25. Law, Kam; Shang, Quanyuan; Harshbarger, William Reid; Maydan, Dan, Deposition of passivation layers for active matrix liquid crystal display (AMLCD) applications.

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26. Law,Kam; Shang,Quanyuan; Harshbarger,William Reid; Maydan,Dan, Deposition of silicon layers for active matrix liquid crystal display (AMLCD) applications.

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27. Yoon, Hyungsuk A.; Fang, Hongbin; Yang, Michael X., Deposition of tungsten films.

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28. Lei, Lawrence C.; Kori, Moris, Dual robot processing system.

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29. Fritz, Bernard, Enhanced cavity for a photoacoustic gas sensor.

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30. Chen,Ling; Chang,Mei, Enhancement of copper line reliability using thin ALD tan film to cap the copper line.

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31. Seutter, Sean M.; Yang, Michael X.; Xi, Ming, Formation of a tantalum-nitride layer.

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32. Seutter, Sean M.; Yang, Michael X.; Xi, Ming, Formation of a tantalum-nitride layer.

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33. Seutter, Sean M.; Yang, Michael X.; Xi, Ming, Formation of a tantalum-nitride layer.

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34. Seutter, Sean M.; Yang, Michael X.; Xi, Ming, Formation of a tantalum-nitride layer.

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35. Seutter,Sean M.; Yang,Michael X.; Xi,Ming, Formation of a tantalum-nitride layer.

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36. Byun, Jeong Soo; Mak, Alfred, Formation of boride barrier layers using chemisorption techniques.

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37. Byun,Jeong Soo; Mak,Alfred, Formation of boride barrier layers using chemisorption techniques.

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38. Byun,Jeong Soo; Mak,Alfred, Formation of boride barrier layers using chemisorption techniques.

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39. Byun,Jeong Soo; Mak,Alfred, Formation of boride barrier layers using chemisorption techniques.

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40. Chen, Ling; Ku, Vincent; Wu, Dien-Yeh; Chung, Hua; Ouye, Alan; Nakashima, Norman, Gas delivery apparatus and method for atomic layer deposition.

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41. Chen, Ling; Ku, Vincent; Wu, Dien-Yeh; Chung, Hua; Ouye, Alan; Nakashima, Norman, Gas delivery apparatus and method for atomic layer deposition.

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42. Chen, Ling; Ku, Vincent; Wu, Dien-Yeh; Chung, Hua; Ouye, Alan; Nakashima, Norman, Gas delivery apparatus for atomic layer deposition.

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43. Yuri Masaaki,JPX ; Ueda Tetsuzo ; Baba Takaaki, Growth of GaN on a substrate using a ZnO buffer layer.

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44. Barany Barbara G. (Falcon Heights MN) Reimer Scott T. (Fagan MN) Ulmer Robert P. (Hopkins MN) Zook J. David (Minneapolis MN), High gain ultraviolet photoconductor based on wide bandgap nitrides.

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45. Cox, James Allen; Higashi, Robert, High reflectance terahertz mirror and related method.

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46. Ruden P. Paul ; Krishnankutty Subash, Hybrid ultraviolet detector.

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47. Khare, Reena; Goetz, Werner K.; Camras, Michael D., Increasing the brightness of III-nitride light emitting devices.

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48. Higashi, Robert E.; Newstrom-Peitso, Karen M.; Ridley, Jeffrey A., Integral topside vacuum package.

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49. Chung,Hua; Maity,Nirmalya; Yu,Jick; Mosely,Roderick Craig; Chang,Mei, Integration of ALD tantalum nitride for copper metallization.

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50. Chung, Hua; Chen, Ling; Yu, Jick; Chang, Mei, Integration of barrier layer and seed layer.

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51. Chung,Hua; Chen,Ling; Yu,Jick; Chang,Mei, Integration of barrier layer and seed layer.

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52. Yang, Michael X.; Itoh, Toshio; Xi, Ming, Integration of titanium and titanium nitride layers.

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53. Yang,Michael X.; Itoh,Toshio; Xi,Ming, Integration of titanium and titanium nitride layers.

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54. Nguyen, Anh N.; Yang, Michael X.; Xi, Ming; Chung, Hua; Chang, Anzhong; Yuan, Xiaoxiong; Lu, Siqing, Lid assembly for a processing system to facilitate sequential deposition techniques.

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55. Tzu, Gwo-Chuan; Umotoy, Salvador P., Lid assembly for a processing system to facilitate sequential deposition techniques.

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56. Tzu, Gwo-Chuan; Umotoy, Salvador P., Lid assembly for a processing system to facilitate sequential deposition techniques.

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57. Xi,Ming; Sinha,Ashok; Kori,Moris; Mak,Alfred W.; Lu,Xinliang; Lai,Ken Kaung; Littau,Karl A., Method and apparatus for depositing refractory metal layers employing sequential deposition techniques to form a nucleation layer.

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58. Kneissl, Michael A.; Bour, David P.; Johnson, Noble M.; Walker, Jack, Method and structure for nitride based laser diode arrays on a conducting substrate.

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59. Kori, Moris; Mak, Alfred W.; Byun, Jeong Soo; Lei, Lawrence Chung-Lai; Chung, Hua, Method and system for controlling the presence of fluorine in refractory metal layers.

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60. Kori,Moris; Mak,Alfred W.; Byun,Jeong Soo; Lei,Lawrence Chung Lai; Chung,Hua; Sinha,Ashok; Xi,Ming, Method and system for controlling the presence of fluorine in refractory metal layers.

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61. Sinha,Ashok; Xi,Ming; Kori,Moris; Mak,Alfred W.; Byun,Jeong Soo; Lei,Lawrence Chung Lai; Chung,Hua, Method and system for controlling the presence of fluorine in refractory metal layers.

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62. Kori, Moris; Mak, Alfred W.; Byun, Jeong Soo; Lei, Lawrence Chung-Lai; Chung, Hua, Method for forming tungsten materials during vapor deposition processes.

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63. Kori, Moris; Mak, Alfred W.; Byun, Jeong Soo; Lei, Lawrence Chung-Lai; Chung, Hua; Sinha, Ashok; Xi, Ming, Method for forming tungsten materials during vapor deposition processes.

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64. Kori,Moris; Mak,Alfred W.; Byun,Jeong Soo; Lei,Lawrence Chung Lai; Chung,Hua; Sinha,Ashok; Xi,Ming, Method for forming tungsten materials during vapor deposition processes.

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65. Kori,Moris; Mak,Alfred W.; Byun,Jeong Soo; Lei,Lawrence Chung Lai; Chung,Hua; Sinha,Ashok; Xi,Ming, Method for forming tungsten materials during vapor deposition processes.

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66. Takahashi Kunimasa,JPX ; Kitabatake Makoto,JPX ; Uchida Masao,JPX ; Yokogawa Toshiya,JPX, Method for growing semiconductor film and method for fabricating semiconductor device.

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67. Chen, Ling; Cao, Wei, Method for growing thin films by catalytic enhancement.

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68. Razeghi Manijeh, Method for making III-Nitride laser and detection device.

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69. Wang, Tao, Method for significant reduction of dislocations for a very high A1 composition A1GaN layer.

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70. Sverdlov Boris N. ; Major ; Jr. Jo Stephen, Method of doping gan layers p-type for device fabrication.

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71. Sasaoka Chiaki,JPX, Method of growing nitride crystal of group III element.

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72. Lai, Ken Kaung; Rajagopalan, Ravi; Khandelwal, Amit; Moorthy, Madhu; Gandikota, Srinivas; Castro, Joseph; Gelatos, Avgerinos V.; Knepfler, Cheryl; Jian, Ping; Fang, Hongbin; Huang, Chao-Ming; Xi, Ming; Yang, Michael X.; Chung, Hua; Byun, Jeong Soo, Methods for depositing tungsten layers employing atomic layer deposition techniques.

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73. Lai,Ken Kaung; Rajagopalan,Ravi; Khandelwal,Amit; Moorthy,Madhu; Gandikota,Srinivas; Castro,Joseph; Gelatos,Averginos V.; Knepfler,Cheryl; Jian,Ping; Fang,Hongbin; Huang,Chao Ming; Xi,Ming; Yang,Michael X.; Chung,Hua; Byun,Jeong Soo, Methods for depositing tungsten layers employing atomic layer deposition techniques.

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74. Kim, Jong Su; Park, Hyung Sang; Yoo, Yong Min; Kwon, Hak Yong; Yoon, Tae Ho, Methods of forming an amorphous silicon thin film.

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75. Cole,Barrett E.; Higashi,Robert E.; Zins,Christopher J.; Krishnankutty,Subash, Multi-substrate package assembly.

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76. Cole,Barrett E.; Higashi,Robert E.; Zins,Christopher J.; Krishnankutty,Subash, Multi-substrate package assembly.

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77. Yang, Michael Xi; Yoon, Hyungsuk Alexander; Zhang, Hui; Fang, Hongbin; Xi, Ming, Multiple precursor cyclical deposition system.

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78. Cole, Barrett E.; Marta, Terry; Cox, James Allen; Nusseibeh, Fouad, Multiple wavelength cavity ring down gas sensor.

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79. Cole,Barrett E., Multiple wavelength spectrometer.

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80. Cole, Barrett E.; Cox, James A.; Zook, J. David, Optical cavity system having an orthogonal input.

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81. La Forgia, Domenico; De Risi, Arturo Antonio; De Vittorio, Massimo; Cingolani, Roberto; Passaseo, Adriana; Lomascolo, Mauro, Optical system for detecting the concentration of combustion products.

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82. Cole, Barrett E.; Gu, Yuandong, Particle detection using fluorescence.

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83. Nihashi, Tokuaki, Photocathode.

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84. Yang, Michael X.; Itoh, Toshio; Xi, Ming, Plasma-enhanced cyclic layer deposition process for barrier layers.

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85. Yang,Michael X.; Itoh,Toshio; Xi,Ming, Plasma-enhanced cyclic layer deposition process for barrier layers.

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86. Raisanen, Petri; Marcus, Steven, Plasma-enhanced deposition process for forming a metal oxide thin film and related structures.

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87. Goldenberg Barany Barbara ; McPherson Scott A. ; Reimer Scott T. ; Ulmer Robert P. ; Zook J. David ; Hitchell ; deceased Maurice L., Process for forming a high gain, wide bandgap gallium nitride photoconductor having particular sensitivity to ultraviol.

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88. Lu, Xinliang; Jian, Ping; Yoo, Jong Hyun; Lai, Ken Kaung; Mak, Alfred W.; Jackson, Robert L.; Xi, Ming, Pulsed deposition process for tungsten nucleation.

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89. Lu,Xinliang; Jian,Ping; Yoo,Jong Hyun; Lai,Ken Kaung; Mak,Alfred W.; Jackson,Robert L.; Xi,Ming, Pulsed nucleation deposition of tungsten layers.

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90. Manabe Katsuhide (Aichi-ken JPX) Koike Masayoshi (Aichi-ken JPX) Kato Hisaki (Aichi-ken JPX) Koide Norikatsu (Aichi-ken JPX) Akasaki Isamu (Aichi-ken JPX) Amano Hiroshi (Aichi-ken JPX), Sapphireless group III nitride semiconductor and method for making same.

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91. Chen Qisheng, Schottky barrier detectors for visible-blind ultraviolet detection.

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92. Yagi, Shigeru, Semiconductor device and method and apparatus for manufacturing semiconductor device.

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93. Arthur Sherman, Sequential chemical vapor deposition.

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94. Sherman, Arthur, Sequential chemical vapor deposition.

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95. Sherman, Arthur, Sequential chemical vapor deposition.

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96. Sherman, Arthur, Sequential chemical vapor deposition.

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97. Sherman, Arthur, Sequential chemical vapor deposition.

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98. Sherman,Arthur, Sequential chemical vapor deposition.

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99. Glenn, W. Benjamin; Verplancken, Donald J., Simultaneous cyclical deposition in different processing regions.

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100. Cole,Barrett E.; Higashi,Robert E.; Subramanian,Arunkumar; Krishnankutty,Subash, Spectrally tunable detector.

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101. Cole,Barrett E.; Higashi,Robert E.; Subramanian,Arunkumar; Krishnankutty,Subash, Spectrally tunable detector.

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102. Yukinori Nakamura JP; Tomohiko Shibata JP, Surface acoustic wave device, substrate therefor and method of manufacturing the substrate.

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103. Xi, Ming; Yang, Michael; Zhang, Hui, System and method for forming an integrated barrier layer.

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104. Mak, Alfred W.; Chang, Mei; Byun, Jeong Soo; Chung, Hua; Sinha, Ashok; Kori, Moris, System and method to form a composite film stack utilizing sequential deposition techniques.

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105. Cox,James A.; Cole,Barrett E., Tunable laser fluid sensor.

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106. Wang, Shulin; Kroemer, Ulrich; Luo, Lee; Chen, Aihua; Li, Ming, Tungsten nitride atomic layer deposition processes.

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107. Wang,Shulin; Kroemer,Ulrich; Luo,Lee; Chen,Aihua; Li,Ming, Tungsten nitride atomic layer deposition processes.

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108. Lu, Siqing; Chang, Yu; Sun, Dongxi; Dang, Vinh; Yang, Michael X.; Chang, Anzhong; Nguyen, Anh N.; Xi, Ming, Valve control system for atomic layer deposition chamber.

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109. Lu,Siqing; Chang,Yu; Sun,Dongxi; Dang,Vinh; Yang,Michael X.; Chang,Anzhong (Andrew); Nguyen,Anh N.; Xi,Ming, Valve control system for atomic layer deposition chamber.

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110. Lee, Sang-Hyeob; Gelatos, Avgerinos V.; Wu, Kai; Khandelwal, Amit; Marshall, Ross; Renuart, Emily; Lai, Wing-Cheong Gilbert; Lin, Jing, Vapor deposition of tungsten materials.

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