이 특허를 인용한 특허 (165)

1. Ishikawa, Norio, Alkaline aqueous solution composition used for washing or etching substrates.

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2. Lee, Wai Mun, Alkanolamine semiconductor process residue removal composition and process.

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3. Wai Mun Lee, Alkanolamine semiconductor process residue removal process.

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4. Cheung Robin ; Sinha Ashok ; Tepman Avi ; Carl Dan, Apparatus for electro-chemical deposition with thermal anneal chamber.

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5. Ritzdorf, Thomas L.; Stevens, E. Henry; Chen, LinLin; Graham, Lyndon W.; Dundas, Curt, Apparatus for low-temperature annealing of metallization microstructures in the production of a microelectronic device.

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6. Biberger, Maximilian Albert; Layman, Frederick Paul; Sutton, Thomas Robert, Apparatus for supercritical processing of multiple workpieces.

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7. Martin Andreas,DEX ; Hub Walter,DEX ; Kolbesen Bernd,DEX, Aqueous solution for cleaning a semiconductor substrate.

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8. Lovetro,David C.; Bonislawski,David J.; Webb,Laural C., Chemical composition and method.

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9. Mertens, Paul; Loewenstein, Lee; Vereecke, Guy, Chemical solution and method for reducing the metal contamination on the surface of a semiconductor substrate.

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10. Asher,Vikram; Ebbeler,Robert E., Cleaners containing peroxide bleaching agents for cleaning paper making equipment and method.

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11. Kakizawa Masahiko,JPX ; Ichikawa Osamu,JPX ; Hayashida Ichiro,JPX, Cleaning agent.

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12. Kakizawa, Masahiko; Ichikawa, Osamu; Hayashida, Ichiro, Cleaning agent.

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13. Masahiko Kakizawa JP; Osamu Ichikawa JP; Ichiro Hayashida JP, Cleaning agent.

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14. Nohara, Masahiro; Hashimoto, Ryou; Oketani, Taimi; Abe, Hisaki; Maruyama, Taketo; Aoyama, Tetsuo, Cleaning agent and cleaning process using the same.

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15. Hayashida, Ichiro; Mizuta, Hironori; Kato, Takehisa, Cleaning composition and method of cleaning therewith.

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16. Lee,Wai Mun, Cleaning compositions and methods of use thereof.

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17. Lee Wai Mun, Cleaning compositions for removing etching residue and method of using.

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18. Lee Wai Mun, Cleaning compositions for removing etching residue and method of using.

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19. Lee Wai Mun, Cleaning compositions for removing etching residue and method of using.

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20. Yoon, Hyo-Joong; Bang, Soon-Hong; Kim, Sang-Tae; Lee, Seung-Yong, Cleaning solution composition for a solar cell.

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21. Shumin Wang, Cleaning solution for semiconductor surfaces following chemical-mechanical polishing.

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22. Wang, Shumin, Cleaning solution for semiconductor surfaces following chemical-mechanical polishing.

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23. Lee Wai Mun ; Pittman ; Jr. Charles U. ; Small Robert J., Cleaning solutions including nucleophilic amine compound having reduction and oxidation potentials.

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24. Lee Wai Mun ; Pittman ; Jr. Charles U. ; Small Robert J., Cleaning solutions including nucleophilic amine compound having reduction and oxidation potentials.

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25. Lee,Wai Mun; Pittman, Jr.,Charles U.; Small,Robert J., Cleaning solutions including nucleophilic amine compound having reduction and oxidation potentials.

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26. Lee,Wai Mun; Pittman, Jr.,Charles U.; Small,Robert J., Cleaning solutions including nucleophilic amine compound having reduction and oxidation potentials.

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27. Lee,Wai Mun; Pittman, Jr.,Charles U.; Small,Robert J., Cleaning solutions including nucleophilic amine compound having reduction and oxidation potentials.

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28. Maydan, Dan, Coated anode apparatus and associated method.

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29. De Waele,Rita; Vos,Rita, Composition and method for treating a semiconductor substrate.

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30. De Waele,Rita; Vos,Rita, Composition and method for treating a semiconductor substrate.

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31. Chopra, Dinesh, Composition compatible with aluminum planarization and methods therefore.

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32. Dinesh Chopra, Composition compatible with aluminum planarization and methods therefore.

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33. Vos,Rita; Mertens,Paul; Fester,Albrecht; Doll,Oliver; Kolbesen,Bernd, Composition comprising an oxidizing and complexing compound.

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34. Kovarsky,Nicolay; Yang,Michael; Lubomirsky,Dmitry, Contact plating apparatus.

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35. Herchen,Harald, Contact ring with embedded flexible contacts.

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36. Jones,William Dale, Control of fluid flow in the processing of an object with a fluid.

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37. Hey, H. Peter W.; Dordi, Yezdi N.; Olgado, Donald J. K.; Denome, Mark, Deposition uniformity control for electroplating apparatus, and associated method.

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38. Arena Foster,Chantal J.; Awtrey,Allan Wendell; Ryza,Nicholas Alan; Schilling,Paul, Developing photoresist with supercritical fluid and developer.

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39. Arena-Foster, Chantal J.; Awtrey, Allan Wendell; Ryza, Nicholas Alan; Schilling, Paul, Developing photoresist with supercritical fluid and developer.

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40. Arena-Foster, Chantal J.; Awtrey, Allan Wendell; Ryza, Nicholas Alan; Schilling, Paul, Drying resist with a solvent bath and supercritical CO2.

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41. Stevens, Joe; Olgado, Donald; Ko, Alex; Mok, Yeuk-Fai Edwin, Edge bead removal/spin rinse dry (EBR/SRD) module.

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42. Herchen,Harald; Lubomirsky,Dmitry; Zheng,Bo; Pang,Lily L., Electric field reducing thrust plate.

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43. Landau Uziel ; D'Urso John J. ; Rear David B., Electro deposition chemistry.

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44. Landau, Uziel; D'Urso, John J.; Rear, David B., Electro deposition chemistry.

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45. Uziel Landau ; John J. D'Urso ; David B. Rear, Electro deposition chemistry.

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46. Yezdi Dordi ; Joe Stevens ; Roy Edwards ; Bob Lowrance ; Michael Sugarman ; Mark Denome, Electro-chemical deposition cell for face-up processing of single semiconductor substrates.

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47. Dordi Yezdi ; Malik Muhammad Atif ; Hao Henan ; Franklin Timothy H. ; Stevens Joe ; Olgado Donald, Electro-chemical deposition system.

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48. Dordi Yezdi ; Olgado Donald J. ; Morad Ratson ; Hey Peter ; Denome Mark ; Sugarman Michael ; Lloyd Mark ; Stevens Joseph ; Marohl Dan ; Shin Ho Seon ; Ravinovich Eugene ; Cheung Robin ; Sinha Ashok K, Electro-chemical deposition system.

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49. Dordi, Yezdi; Olgado, Donald J.; Morad, Ratson; Hey, Peter; Denome, Mark; Sugarman, Michael; Lloyd, Mark; Stevens, Joseph; Marohl, Dan; Shin, Ho Seon; Ravinovich, Eugene; Cheung, Robin; Sinha, Ashok , Electro-chemical deposition system.

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50. Shen Ben ; Dordi Yezdi ; Birkmaier George, Electro-chemical deposition system and method.

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51. Landau Uziel, Electro-chemical deposition system and method of electroplating on substrates.

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52. Landau,Uziel, Electro-chemical deposition system and method of electroplating on substrates.

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53. Landau, Uziel; D'Urso, John J., Electrodeposition chemistry for filling apertures with reflective metal.

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54. Landau, Uziel; D'Urso, John J., Electrodeposition chemistry for filling of apertures with reflective metal.

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55. Uziel Landau ; John J. D'Urso, Electrodeposition chemistry for filling of apertures with reflective metal.

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56. Stevens, Joseph J.; Lubomirsky, Dmitry; Pancham, Ian; Olgado, Donald J.; Grunes, Howard E.; Mok, Yeuk-Fai Edwin; Dixit, Girish, Electroless plating system.

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57. Dordi, Yezdi N.; Stevens, Joseph J.; Hey, H. Peter W.; Olgado, Donald J. K., Flow diffuser to be used in electro-chemical plating system and method.

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58. Wojtczak William A. ; Guan George ; Fine Stephen A., Formulations including a 1, 3-dicarbonyl compound chelating agent for stripping residues from semiconductor substrates.

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59. Wojtczak, William A.; Seijo, Ma. Fatima; Bernhard, David; Nguyen, Long, Formulations including a 1,3-dicarbonyl compound chelating agent and copper corrosion inhibiting agents for stripping residues from semiconductor substrates containing copper structures.

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60. Abe Takao,JPX ; Kobayashi Norihiro,JPX, Heat treatment method for a silicon wafer and a silicon wafer heat-treated by the method.

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61. Lakshmikanthan Jayant ; Stevens Joe, Inflatable compliant bladder assembly.

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62. Brian K. Marshall, Isolation and/or removal of ionic contaminants from planarization fluid compositions using macrocyclic polyethers.

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63. Brian K. Marshall, Isolation and/or removal of ionic contaminants from planarization fluid compositions using macrocyclic polyethers and methods of using such compositions.

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64. Olgado, Donald J. K., Linear motion apparatus and associated method.

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65. Yamaguchi, Daigorou; Noda, Yoshitaka, Manufacturing method of semiconductor device.

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66. Chen,B. Michelle; Shin,Ho Seon; Dordi,Yezdi; Morad,Ratson; Cheung,Robin, Method and apparatus for annealing copper films.

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67. Morad, Ratson; Shin, Ho Seon; Cheung, Robin; Kogan, Igor, Method and apparatus for heating and cooling substrates.

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68. Ritzdorf,Thomas L.; Stevens,E. Henry; Chen,LinLin; Graham,Lyndon W.; Dundas,Curt, Method and apparatus for low temperature annealing of metallization micro-structure in the production of a microelectronic device.

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69. Biberger, Maximilian Albert; Layman, Frederick Paul; Sutton, Thomas Robert, Method and apparatus for supercritical processing of multiple workpieces.

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70. Hey, Peter; Kwak, Byung-Sung Leo, Method and apparatus to overcome anomalies in copper seed layers and to tune for feature size and aspect ratio.

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71. Dordi, Yezdi N.; Stevens, Joseph J.; Sugarman, Michael N., Method and associated apparatus for tilting a substrate upon entry for metal deposition.

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72. Wang, Hougong; Zheng, Bo; Dixit, Girish; Chen, Fusen, Method and associated apparatus to mechanically enhance the deposition of a metal film within a feature.

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73. Parent,Wayne M.; Goshi,Gentaro, Method and system for cooling a pump.

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74. Hansen,Brandon; Lowe,Marie, Method and system for treating a substrate with a high pressure fluid using fluorosilicic acid.

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75. Cooper Emanuel I. ; Estes Scott A. ; Gale Glenn W. ; Jagannathan Rangarajan ; Okorn-Schmidt Harald F. ; Rath David L., Method for cleaning semiconductor devices.

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76. Cooper Emanuel I. ; Estes Scott A. ; Gale Glenn W. ; Jagannathan Rangarajan ; Okorn-Schmidt Harald F. ; Rath David L., Method for cleaning semiconductor devices.

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77. Aoki, Hidemitsu; Yamasaki, Shinya, Method for cleaning semiconductor wafer after chemical mechanical polishing on copper wiring.

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78. Schmidt Harald Okorn,BEX ; Baeyens Martien Johanna Maria Godelieve Bernard,BEX ; Heyns Marc Marcel Annie Maria,BEX ; Mertens Paul,BEX, Method for evaluating, monitoring or controlling the efficiency, stability, or exhaustion of a complexing or chelating.

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79. Ritzdorf,Thomas L.; Stevens,E. Henry; Chen,LinLin; Graham,Lyndon W.; Dundas,Curt, Method for low temperature annealing of metallization micro-structures in the production of a microelectronic device.

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80. Gonzales David ; Hudson Guy F., Method for post chemical-mechanical planarization cleaning of semiconductor wafers.

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81. Gonzales, David; Hudson, Guy F., Method for post chemical-mechanical planarization cleaning of semiconductor wafers.

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82. Gonzales,David; Hudson,Guy F., Method for post chemical-mechanical planarization cleaning of semiconductor wafers.

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83. Schulz Peter (Wappingers Falls NY), Method for reducing metal contamination of silicon wafers during semiconductor manufacturing.

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84. Schulz Peter,DEX, Method for reducing metal contamination of silicon wafers during semiconductor manufacturing.

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85. Zheng, Bo; Bajaj, Rajeev; Wang, Zhonghui Alex, Method for regulating the electrical power applied to a substrate during an immersion process.

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86. Douglas Monte A. ; Templeton Allen C., Method for removing inorganic contamination by chemical derivitization and extraction.

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87. Kawamura,Kohei; Asano,Akira; Miyatani,Koutarou; Hillman,Joseph T.; Palmer,Bentley, Method for supercritical carbon dioxide processing of fluoro-carbon films.

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88. Biberger, Maximilian Albert; Layman, Frederick Paul; Sutton, Thomas Robert, Method for supercritical processing of multiple workpieces.

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89. Aoki Hidemitsu (Tokyo JPX) Morita Makoto (Tokyo JPX) Tsuji Mikio (Tokyo JPX), Method for wet processing of a semiconductor substrate.

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90. Zheng, Bo; Wang, Hougong; Dixit, Girish; Chen, Fusen, Method of application of electrical biasing to enhance metal deposition.

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91. Biberger, Maximilian A.; Schilling, Paul E., Method of depositing metal film and metal deposition cluster tool including supercritical drying/cleaning module.

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92. Biberger,Maximilian A.; Schilling,Paul E., Method of depositing metal film and metal deposition cluster tool including supercritical drying/cleaning module.

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93. Ping Er-Xuan ; Li Li, Method of forming a capacitor.

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94. Ping Er-Xuan ; Li Li, Method of forming a wordline.

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95. Chen, Guoqing; Pan, James, Method of forming hemisphere grained silicon on a template on a semiconductor work object.

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96. Hillman,Joseph, Method of inhibiting copper corrosion during supercritical COcleaning.

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97. Funabashi Michimasa,JPX, Method of manufacturing a semiconductor integrated circuit device.

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98. Funabashi, Michimasa, Method of manufacturing a semiconductor integrated circuit device.

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99. Funabashi, Michimasa, Method of manufacturing a semiconductor integrated circuit device.

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100. Eric J. Woolsey ; Douglas G. Mitchell ; George F. Carney ; Francis J. Carney, Jr. ; Cary B. Powell, Method of manufacturing electronic components.

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101. Eric J. Woolsey ; Douglas G. Mitchell ; George F. Carney ; Francis J. Carney, Jr. ; Cary B. Powell, Method of manufacturing electronic components.

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102. Toma,Dorel Ioan; Schilling,Paul, Method of passivating of low dielectric materials in wafer processing.

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103. Suzuki, Tetsuo; Takada, Satoru, Method of reclaiming silicon wafers.

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104. Suzuki Tatsuya,JPX, Method of removing a carbon-contaminated layer from a silicon substrate surface for subsequent selective silicon epitaxial growth thereon and apparatus for selective silicon epitaxial growth.

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105. Lee Wai Mun ; Pittman ; Jr. Charles U. ; Small Robert J., Method of removing etching residue.

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106. Douglas Monte A. ; Templeton Allen C., Method of removing inorganic contamination by chemical alteration and extraction in a supercritical fluid media.

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107. Lee Wai Mun, Method of stripping resists from substrates using hydroxylamine and alkanolamine.

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108. Chen,LinLin; Graham,Lyndon W.; Ritzdorf,Thomas L.; Fulton,Dakin; Batz, Jr.,Robert W., Method of submicron metallization using electrochemical deposition of recesses including a first deposition at a first current density and a second deposition at an increased current density.

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109. Biberger,Maximilian Albert; Layman,Frederick Paul; Sutton,Thomas Robert, Method of supercritical processing of a workpiece.

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110. Schilling,Paul, Method of treating a composite spin-on glass/anti-reflective material prior to cleaning.

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111. Schilling,Paul, Method of treatment of porous dielectric films to reduce damage during cleaning.

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112. Li Li ; Westmoreland Donald L. ; Hawthorne ; deceased Richard C. ; Torek Kevin, Method of wafer cleaning, and system and cleaning solution regarding same.

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113. Krusell Wilbur C. ; Malik Igor J., Method to remove metals in a scrubber.

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114. Li, Shijian; Kolics, Artur K.; Arunagiri, Tiruchirapalli N., Methods and solutions for preventing the formation of metal particulate defect matter upon a substrate after a plating process.

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115. Er-Xuan Ping ; Li Li, Methods of forming hemispherical grain polysilicon.

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116. Ping Er-Xuan ; Li Li, Methods of forming hemispherical grain polysilicon.

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117. Chen, Guoqing; Pan, James, Methods of forming hemispherical grained silicon on a template on a semiconductor work object.

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118. Chen, Guoqing; Pan, James, Methods of forming hemispherical grained silicon on a template on a semiconductor work object.

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119. Chen,Guoqing; Pan,James, Methods of forming hemispherical grained silicon on a template on a semiconductor work object.

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120. Olgado, Donald J.; Tepman, Avi; Franklin, Timothy J., Multiple blade robot adjustment apparatus and associated method.

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121. Skrovan John ; Meikle Scott, Planarization fluid composition chelating agents and planarization method using same.

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122. Skrovan John ; Meikle Scott, Planarization fluid composition including chelating agents.

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123. Skrovan John ; Robinson Karl M., Planarization method using a slurry including a dispersant.

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124. Skrovan John ; Meikle Scott, Planarization method using fluid composition including chelating agents.

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125. Skrovan, John; Meikle, Scott, Planarization method using fluid composition including chelating agents.

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126. Grant Donald C. (Excelsior MN), Point-of-use recycling of wafer cleaning substances.

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127. Small Robert J., Post clean treatment.

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128. Small, Robert J., Post clean treatment.

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129. Small Robert J., Post clean treatment composition comprising an organic acid and hydroxylamine.

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130. Chai Jing ; Erk Henry F. ; Schmidt Judith Ann ; Doane Thomas Eugene, Post-lapping cleaning process for silicon wafers.

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131. Shive Larry W. ; Pirooz Saeed, Pre-thermal treatment cleaning process.

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132. Olgado, Donald J. K., Removable modular cell for electro-chemical plating and method.

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133. Mullee,William H.; de Leeuwe,Marc; Roberson, Jr.,Glenn A.; Palmer,Bentley J., Removal of CMP and post-CMP residue from semiconductors using supercritical carbon dioxide process.

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134. Mullee, William H.; de Leeuwe, Marc; Roberson, Jr., Glenn A., Removal of CMP residue from semiconductor substrate using supercritical carbon dioxide process.

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135. Mullee William H. ; de Leeuwe Marc ; Roberson ; Jr. Glenn A., Removal of CMP residue from semiconductors using supercritical carbon dioxide process.

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136. Bertram, Ronald Thomas; Scott, Douglas Michael, Removal of contaminants from a fluid.

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137. Mullee, William H., Removal of photoresist and photoresist residue from semiconductors using supercritical carbon dioxide process.

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138. Mullee, William H., Removal of photoresist and photoresist residue from semiconductors using supercritical carbon dioxide process.

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139. William H. Mullee ; Maximilian A. Biberger ; Paul E. Schilling, Removal of photoresist and residue from substrate using supercritical carbon dioxide process.

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140. Koch Robert, Removal of polishing residue from substrate using supercritical fluid process.

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141. Mullee William H., Removal of resist or residue from semiconductors using supercritical carbon dioxide.

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142. Hey, H. Peter W.; Dordi, Yezdi N., Reverse voltage bias for electro-chemical plating system and method.

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143. Hey, H. Peter W.; Sugarman, Michael N.; Denome, Mark, Segmenting of processing system into wet and dry areas.

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144. Aegerter,Brian K.; Dundas,Curt T.; Ritzdorf,Tom L.; Curtis,Gary L.; Jolley,Michael; Peace,Steven L., Selective treatment of microelectric workpiece surfaces.

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145. Vos, Rita; Mertens, Paul; Kolbesen, Bernd; Fester, Albrecht; Doll, Oliver, Semiconductor cleaning solution.

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146. Reardon,Timothy J.; Meuchel,Craig P.; Oberlitner,Thomas H.; Owczarz,Aleksander; Thompson,Raymon F., Semiconductor processing apparatus.

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147. Reardon,Timothy J.; Oberlitner,Thomas H.; Meuchel,Craig P.; Owczarz,Aleksander; Thompson,Raymon F., Semiconductor processing apparatus.

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148. Ping Er-Xuan ; Li Li, Semiconductor processing methods.

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149. Er-Xuan Ping ; Li Li, Semiconductor processing methods, methods of forming hemispherical grain polysilicon, methods of forming capacitors, and methods of forming wordlines.

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150. Tomita, Hiroshi; Yamada, Yuji; Yamada, Hiroaki; Ishikawa, Norio; Abe, Yumiko, Semiconductor substrate cleaning liquid and semiconductor substrate cleaning process.

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151. Fukami, Teruaki, Silicon wafer storage water and silicon wafer storage method.

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152. Lei, Tan-Fu; Chao, Tien-Sheng; Liaw, Ming-Chi, Solutions for cleaning silicon semiconductors or silicon oxides.

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153. Lloyd Mark ; Sinha Ashok K. ; Edelstein Sergio ; Sugarman Michael, Spin-rinse-drying process for electroplated semiconductor wafers.

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154. Skee, David C., Stabilized alkaline compositions for cleaning microelectronic substrates.

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155. Skee, David C., Stabilized alkaline compositions for cleaning microelectronic substrates.

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156. Misra, Ashutosh, Stabilized slurry compositions.

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157. Chen, Linlin; Graham, Lyndon W.; Ritzdorf, Thomas L.; Fulton, Dakin; Batz, Jr., Robert W., Submicron metallization using electrochemical deposition.

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158. Donald J. K. Olgado ; Jayant Lakshmikanthan, Substrate holder system with substrate extension apparatus and associated method.

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159. Lubomirsky,Dmitry, Substrate support with fluid retention band.

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160. Hidemitsu Aoki JP, Substrate-cleaning method and substrate-cleaning solution.

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161. Olgado, Donald J. K.; Tepman, Avi; Lubomirsky, Dmitry; Webb, Timothy R., System for planarizing metal conductive layers.

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162. Li Li ; Westmoreland Donald L. ; Hawthorne Richard C. ; Torek Kevin, System for wafer cleaning.

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163. Jacobson,Gunilla; Yellowaga,Deborah, Treatment of a dielectric layer using supercritical CO.

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164. Kevwitch, Robert, Treatment of substrate using functionalizing agent in supercritical carbon dioxide.

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165. Mok,Yeuk Fai Edwin; Nguyen,Son T., Two position anneal chamber.

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