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Process for metal deposition for microelectronic interconnections 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • B05D-005/12
  • C23C-016/06
  • H01L-021/314
출원번호 US-0742391 (1991-08-08)
발명자 / 주소
  • Heller Adam (Austin TX) Argitis Panagiotis (Piraeus TX GRX) Carls Joseph C. (Austin TX)
출원인 / 주소
  • University of Texas at Austin, Texas (Austin TX 02)
인용정보 피인용 횟수 : 75  인용 특허 : 0

초록

A method for forming interconnections in microelectronic devices, including interconnections through small vias between different layers in the microelectronic devices include the spin coating of a film comprising a polyoxometalate and an organic material on the substrate. The film is optionally pat

대표청구항

A method of selectively forming interconnections in a microelectronic device comprising: spin coating on a surface of said microelectronic device a solution containing a polyoxometalate and an organic constituent, the polyoxometalate containing at least one element selected from the group consisting

이 특허를 인용한 특허 (75)

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