초록 ▼

The present invention relates to a negative photoresist consisting essentially of a process for the production of relief structures using a) at least one solid film-forming polyphenol, b) at least one compound which contains at least two epoxide groups or at least two vinyl ether groups or at least

The present invention relates to a negative photoresist consisting essentially of a process for the production of relief structures using a) at least one solid film-forming polyphenol, b) at least one compound which contains at least two epoxide groups or at least two vinyl ether groups or at least one epoxide and vinyl ether group in the molecule, c) at least one cationic photoinitiator for component b) and d) if appropriate customary additives. The resist can be developed under aqueous-alkaline conditions.

대표청구항 ▼

A process for the production of relief structures comprising the following operating steps: 1) coating a substrate with a radiation-sensitive composition consisting essentially of: a) at least one film forming polyphenol which has such a content of phenolic hydroxyl groups to render the composition

A process for the production of relief structures comprising the following operating steps: 1) coating a substrate with a radiation-sensitive composition consisting essentially of: a) at least one film forming polyphenol which has such a content of phenolic hydroxyl groups to render the composition soluble or swellable in an aqueous-alkaline developer solution, wherein the polyphenol is selected from the group consisting of: i) a novolak which is derived from a binuclear or mononuclear substituted or unsubstituted phenol and a C1-C6aldehyde, ii) a copolymer of a vinyl compound with no carboxyl groups and an alkenylphenol which contains the structural element of formula I [Figure] (I) in which R is hydrogen or metyl and R1, R2 and R3 independently of one another are hydrogen, C1-C4-alkyl, C1-C4-alkoxy, halogen or methylol, and iii) a copolymer of a vinyl compound with no carboxyl groups and a N-hydroxyphenylmaleimide which contains the structural element of formula II [Figure] (II) wherein R4 independently is C1-C4-alkyl, C1-C4-alkoxy or halogen, m is 1,2 or 3, n is 0, 1, 2, 3 or 4 and the sum of m and n is at most 5; b) at least one compound, different from a), which contains at least two epoxide groups or at least two vinyl groups or at least one epoxide and one vinyl ether group in the molecule; and c) at least one cationic photoinitiator for component b) selected from the group consisting of onium salts with weakly nucleophilic anions and metallocene salts; 2) exposure of the coated substrate with a given pattern of actinic radiation; and 3) removing the non-exposed areas of the radiation-sensitive composite with a developer. A relief structure obtained according to the process of claim 1.