[특허]System for continuously washing and film-forming a semiconductor wafer

System for continuously washing and film-forming a semiconductor wafer 원문보기

IPC분류정보
국가/구분	United States(US) Patent 등록
국제특허분류(IPC7판)	C23C-016/00
출원번호	US-0014150 (1993-02-05)
우선권정보	JP-0057003 (1992-02-07); JP-0057004 (1992-02-07)
발명자 / 주소	Kondo Hiroshi (Tokyo JPX) Tachibana Mitsuhiro (Yamanashi JPX)
출원인 / 주소	Tokyo Electron Limited (Tokyo JPX 03)
인용정보	피인용 횟수 : 56 인용 특허 : 0

초록 ▼

A system for cleaning and film-forming a semiconductor wafer continuously comprises a washing section for removing native oxide from the surface of the wafer while applying hydrofluoric acid to the silicon wafer, a load lock chamber located adjacent to the washing section and filled with the atmosphere of non-oxidizing gas, a film-forming section communicated with and shielded from the load lock chamber by a gate valve to form film on that face of the wafer which is to be processed, a first transfer robot for transferring the wafer between the washing section and the load lock chamber, and a second transfer robot for transferring the wafer between the load lock chamber and the film-forming section. Film is formed on the wafer in the film-forming section after the native oxide is removed from the wafer.

대표청구항 ▼

A system for washing and film-forming a semiconductor wafer continuously comprising: a washing section for removing native oxide from the surface of the semiconductor wafer, which is to be film-formed, while applying an intended solution to the wafer; a load lock chamber located adjacent to the washing section and filled with an atmosphere of non-oxidizing gas; a film-forming section having gate means and communicated with and shielded from the load lock chamber by the gate means to apply the film-forming process to that face of the wafer which is to be processed; first transfer means for transferring the wafer between the washing section and the load lock chamber; and second transfer means for transferring the wafer between the load lock chamber and the film-forming section; wherein the wafer is coated with a film in the film-forming section after the native oxide is removed from the wafer in the washing section.

이 특허를 인용한 특허 (56)

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Okonogi Kensuke,JPX, Method of cleaning a surface of a semiconductor substrate by a heat treatment in an inert gas atmosphere.
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Wakamori Tsutomu,JPX ; Iwai Hiroyuki,JPX ; Mihara Katsuhiko,JPX, Processing apparatus.
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Hamelin, Thomas; Wallace, Jay; Laflamme, Jr., Arthur, Processing system and method for chemically treating a substrate.
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IPC	Description
A	생활필수품
A62	인명구조; 소방(사다리 E06C)
A62B	인명구조용의 기구, 장치 또는 방법(특히 의료용에 사용되는 밸브 A61M 39/00; 특히 물에서 쓰이는 인명구조 장치 또는 방법 B63C 9/00; 잠수장비 B63C 11/00; 특히 항공기에 쓰는 것, 예. 낙하산, 투출좌석 B64D; 특히 광산에서 쓰이는 구조장치 E21F 11/00)
A62B-1/08	.. 윈치 또는 풀리에 제동기구가 있는 것

내보내기 구분	파일저장 인쇄 메일전송
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연합인증

System for continuously washing and film-forming a semiconductor wafer 원문보기

초록 ▼

대표청구항 ▼

연구과제 타임라인

이 특허를 인용한 특허 (56)

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System for continuously washing and film-forming a semiconductor wafer 원문보기

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연구과제 타임라인

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이 특허를 인용한 특허 (56)

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