$\require{mediawiki-texvc}$

연합인증

연합인증 가입 기관의 연구자들은 소속기관의 인증정보(ID와 암호)를 이용해 다른 대학, 연구기관, 서비스 공급자의 다양한 온라인 자원과 연구 데이터를 이용할 수 있습니다.

이는 여행자가 자국에서 발행 받은 여권으로 세계 각국을 자유롭게 여행할 수 있는 것과 같습니다.

연합인증으로 이용이 가능한 서비스는 NTIS, DataON, Edison, Kafe, Webinar 등이 있습니다.

한번의 인증절차만으로 연합인증 가입 서비스에 추가 로그인 없이 이용이 가능합니다.

다만, 연합인증을 위해서는 최초 1회만 인증 절차가 필요합니다. (회원이 아닐 경우 회원 가입이 필요합니다.)

연합인증 절차는 다음과 같습니다.

최초이용시에는
ScienceON에 로그인 → 연합인증 서비스 접속 → 로그인 (본인 확인 또는 회원가입) → 서비스 이용

그 이후에는
ScienceON 로그인 → 연합인증 서비스 접속 → 서비스 이용

연합인증을 활용하시면 KISTI가 제공하는 다양한 서비스를 편리하게 이용하실 수 있습니다.

Endpoint detection apparatus and method for chemical/mechanical polishing 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-021/304
출원번호 US-0828054 (1992-01-30)
발명자 / 주소
  • Cote William J. (Poughquag NY) Cronin John E. (Milton VT) Hill William R. (Underhill VT) Hoffman Cheryl A. (Colchester VT)
출원인 / 주소
  • International Business Machines Corporation (Armonk NY 02)
인용정보 피인용 횟수 : 148  인용 특허 : 0

초록

An apparatus and method for determining a selected endpoint in the polishing of layers on a workpiece in a chemical/mechanical polishing apparatus where the workpiece is rotated by a motor against a polishing pad. When a difficult to polish layer, i.e., one requiring a chemical change in a surface s

대표청구항

In a process of polishing of a layer of a first material requiring a chemical/mechanical removal process arranged over a layer of second material requiring only a mechanical removal process disposed on a surface of a workpiece wherein the workpiece is rotated by a first motor and is brought into con

이 특허를 인용한 특허 (148)

  1. Molnar, Charles J., Abrasive finishing with lubricant and tracking.
  2. Molnar Charles J, Abrasive finishing with partial organic boundary layer.
  3. Cheng, Chung-Liang; Chen, Yen-Yu; Lee, Chang-Sheng; Zhang, Wei, Apparatus and method for chemical mechanical polishing.
  4. Labunsky Michael ; Nagengast Andrew ; Pant Anil, Apparatus and method for film thickness measurement integrated into a wafer load/unload unit.
  5. Birang, Manoocher; Gleason, Allan, Apparatus and method for in-situ endpoint detection for chemical mechanical polishing operations.
  6. Birang, Manoocher; Gleason, Allan, Apparatus and method for in-situ endpoint detection for chemical mechanical polishing operations.
  7. Birang, Manoocher; Johansson, Nils; Gleason, Allan, Apparatus and method for in-situ endpoint detection for chemical mechanical polishing operations.
  8. Birang, Manoocher; Johansson, Nils; Gleason, Allan, Apparatus and method for in-situ endpoint detection for semiconductor processing operations.
  9. Elmar Wittenzellner,DEX ; Sekiya Kenichi,JPX, Apparatus and method for machining workpieces by flushing working liquid to the tool-and-workpiece interface.
  10. Thornton Brian ; Nagengast Andrew J. ; Boehm ; Jr. Robert G. ; Pant Anil K. ; Krusell Wilbur C., Apparatus and method for performing end point detection on a linear planarization tool.
  11. Doan Trung Tri ; Sandhu Gurtej Singh ; Grief Malcolm K., Apparatus and method for planar end-point detection during chemical-mechanical polishing.
  12. Nagahara Ron J., Apparatus and method for polish removing a precise amount of material from a wafer.
  13. Daniel David W. ; Gregory John W. ; Allman Derryl D. J., Apparatus and method of detecting a polishing endpoint layer of a semiconductor wafer which includes a metallic reporting substance.
  14. Bright, Nicolas; Hemker, David J., Apparatus and methods for controlling wafer temperature in chemical mechanical polishing.
  15. Kistler, Rodney; Hemker, David J.; Gotkis, Yehiel; Owczarz, Aleksander; Morel, Bruno; Williams, Damon V., Apparatus and methods for detecting transitions of wafer surface properties in chemical mechanical polishing for process status and control.
  16. Lee,Ji Myong, Apparatus and methods of chemical mechanical polishing.
  17. Bright,Nicolas; Hemker,David J., Apparatus for controlling wafer temperature in chemical mechanical polishing.
  18. Taravade Kunal N., Apparatus for detecting an endpoint polishing layer of a semiconductor wafer having a wafer carrier with independent concentric sub-carriers and associated method.
  19. Tang, Wallace T. Y., Apparatus for detection of thin films during chemical/mechanical polishing planarization.
  20. Cote William J. (Poughquag NY) Ryan James G. (Newtown CT) Okumura Katsuya (Poughkeepsie NY) Yano Hiroyuki (Wappingers Falls NY), Apparatus for processing semiconductor wafers.
  21. Bright,Nicolas; Hemker,David J., Apparatus methods for controlling wafer temperature in chemical mechanical polishing.
  22. Berman Michael J., Automated endpoint detection system during chemical-mechanical polishing.
  23. Berman Michael J., Automated inspection system for residual metal after chemical-mechanical polishing.
  24. Aiyer Arun A. ; Coon Paul Derek ; Chau Henry K., CMP variable angle in situ sensor.
  25. Chen Hsi-Chieh (Chu-Tung TWX) Hsu Shun-Liang (Hsin-Chu TWX), Chemical/mechanical planarization (CMP) endpoint method using measurement of polishing pad temperature.
  26. Zhang, Fu, Chemical/mechanical polishing endpoint detection device and method.
  27. Perlov Ilya ; Gantvarg Eugene, Conditioner apparatus for chemical mechanical polishing.
  28. Perlov Ilya ; Gantvarg Eugene, Conditioner head in a substrate polisher and method.
  29. Molnar, Charles J., Controlled lubricated finishing.
  30. Berman, Michael J., Determination of film thickness during chemical mechanical polishing.
  31. Fortin, Vincent; Wu, Kuo-Chun, Determining an endpoint in a polishing process.
  32. Lou Chine-Gie,TWX ; Chen Hseuh-Chung,TWX, Dishing inhibited shallow trench isolation.
  33. Mao, Yi-Chao; Hung, Jui-Pin; Lin, Jing-Cheng; Jeng, Shin-Puu; Yu, Chen-Hua, End point detection in grinding.
  34. Yi, Jingang; Xu, Cangshan, End point detection with imaging matching in semiconductor processing.
  35. Gail D. Shelton ; Gayle W. Miller, Endpoint detection method and apparatus which utilize a chelating agent to detect a polishing endpoint.
  36. Shelton Gail D. ; Miller Gayle W., Endpoint detection method and apparatus which utilize a chelating agent to detect a polishing endpoint.
  37. Chisholm Brynne K. ; Miller Gayle W. ; Shelton Gail D., Endpoint detection method and apparatus which utilize an endpoint polishing layer of catalyst material.
  38. Chisholm Brynne K. ; Miller Gayle W. ; Shelton Gail D., Endpoint detection method and apparatus which utilize an endpoint polishing layer of catalyst material.
  39. Kishii Sadahiro,JPX ; Hatada Akiyoshi,JPX ; Suzuki Rintaro,JPX ; Horie Hiroshi,JPX ; Arimoto Yoshihiro,JPX ; Nakamura Ko,JPX, Fabrication process of a semiconductor device using a slurry containing manganese oxide.
  40. Yang Kai, Feedback loop for selective conditioning of chemical mechanical polishing pad.
  41. Molnar, Charles J, Finishing element using finishing aids.
  42. Charles J Molnar, Finishing element with finishing aids.
  43. Molnar, Charles J, Finishing method for semiconductor wafers using a lubricating boundary layer.
  44. Charles J. Molnar, Finishing with partial organic boundary layer.
  45. Molnar Charles J, Fixed abrasive finishing element having aids finishing method.
  46. Su, Chun-Hsing; Lin, Jing-Cheng; Fu, Tsei-Chung; Chang, Wen-Hua; Mao, Yi-Chao, Grinding wheel design with elongated teeth arrangement.
  47. Molnar, Charles J., In situ control with lubricant and tracking.
  48. Molnar,Charles J, In situ finishing control.
  49. Molnar, Charles J, In situ friction detector method and apparatus.
  50. Osugi Richard S. ; Nagahara Ronald J. ; Lee Dawn M., In-situ chemical-mechanical polishing slurry formulation for compensation of polish pad degradation.
  51. Li Leping ; Barbee Steven George ; Halperin Arnold ; Heinz Tony Frederick, In-situ monitoring and control of conductive films by detecting changes in induced eddy currents.
  52. Li Leping ; Barbee Steven George ; Halperin Arnold ; Heinz Tony Frederick, In-situ monitoring of the change in thickness of films.
  53. Tang, Wallace T. Y., In-situ real-time monitoring technique and apparatus for detection of thin films during chemical/mechanical polishing planarization.
  54. Tang,Wallace T. Y., In-situ real-time monitoring technique and apparatus for detection of thin films during chemical/mechanical polishing planarization.
  55. Tang, Wallace T. Y., In-situ real-time monitoring technique and apparatus for endpoint detection of thin films during chemical/mechanical polishing planarization.
  56. Tang,Wallace T. Y., In-situ real-time monitoring technique and apparatus for endpoint detection of thin films during chemical/mechanical polishing planarization.
  57. Seliskar John J. ; Allman Derryl D. J. ; Gregory John W. ; Yakura James P. ; Kwong Dim Lee, Integrated circuit device having a capacitor with the dielectric peripheral region being greater than the dielectric central region.
  58. Lee Kyu Hong,KRX ; Lee Yong Byouk,KRX ; Kang Sang Won,KRX, Method and apparatus for chemical mechanical polishing.
  59. Hiroshi Mizuno JP; Osamu Kinoshita JP; Tetsuaki Murohashi JP; Akihisa Ueno JP; Yoshifumi Sakuma JP; Kostas Amberiadis, Method and apparatus for chemical-mechanical polishing.
  60. Berman Michael J. ; Holland Karey L., Method and apparatus for concurrent pad conditioning and wafer buff in chemical mechanical polishing.
  61. Gitis Norm ; Vinogradov Michael, Method and apparatus for controlled polishing.
  62. Allman Derryl D. J. ; Daniel David W. ; Gregory John W., Method and apparatus for detecting a planarized outer layer of a semiconductor wafer with a confocal optical system.
  63. Derryl D. J. Allman ; David W. Daniel ; John W. Gregory, Method and apparatus for detecting a planarized outer layer of a semiconductor wafer with a confocal optical system.
  64. Allman Derryl D. J. ; Daniel David W. ; Chisholm Michael F., Method and apparatus for detecting a polishing endpoint based upon heat conducted through a semiconductor wafer.
  65. Allman Derryl D. J. ; Daniel David W. ; Gregory John W., Method and apparatus for detecting a polishing endpoint based upon infrared signals.
  66. Taravade Kunal N., Method and apparatus for detecting an endpoint polishing layer by transmitting infrared light signals through a semiconductor wafer.
  67. Miller Gayle W. ; Chisholm Michael F., Method and apparatus for detecting an ion-implanted polishing endpoint layer within a semiconductor wafer.
  68. Gopalan, Ramesh; Srivatsan, Sridharan; Ramanujam, Katgenhalli Y.; Ni, Tom; Chiang, Conan, Method and apparatus for detecting planarization of metal films prior to clearing.
  69. Gopalan,Ramesh; Srivatsan,Sridharan; Ramanujam,Katgenhalli Y.; Ni,Tom; Chiang,Conan, Method and apparatus for detecting planarization of metal films prior to clearing.
  70. Pan Yang (Pine Grove SGX) Zheng Jiazhen (Whye Lane SGX), Method and apparatus for determination of the end point in chemical mechanical polishing.
  71. Beckage, Peter J., Method and apparatus for determining CMP pad conditioner effectiveness.
  72. Takahashi Tamami,JPX ; Sakata Fumihiko,JPX ; Kimura Norio,JPX ; Kodera Masako,JPX ; Shigeta Atsushi,JPX, Method and apparatus for determining endpoint during a polishing process.
  73. Yau Leopoldo D. (Portland OR) Fischer Paul B. (Hillsboro OR), Method and apparatus for endpoint detection in a chemical/mechanical process for polishing a substrate.
  74. Jairath Rahul ; Pecen Jiri ; Chadda Saket ; Krusell Wilbur C. ; Cutini Jerauld J. ; Engdahl Erik H., Method and apparatus for in-situ end-point detection and optimization of a chemical-mechanical polishing process using a linear polisher.
  75. Jairath Rahul ; Pecen Jiri ; Chadda Saket ; Krusell Wilbur C. ; Cutini Jerauld J. ; Engdahl Erik H., Method and apparatus for in-situ end-point detection and optimization of a chemical-mechanical polishing process using a linear polisher.
  76. Pecen Jiri ; Chadda Saket ; Jairath Rahul ; Krusell Wilbur C., Method and apparatus for in-situ monitoring of thickness during chemical-mechanical polishing.
  77. Pecen, Jiri; Chadda, Saket; Jairath, Rahul; Krusell, Wilbur C., Method and apparatus for in-situ monitoring of thickness during chemical-mechanical polishing.
  78. Pecen Jiri ; Fielden John ; Chadda Saket ; LaComb ; Jr. Lloyd J. ; Jairath Rahul ; Krusell Wilbur C., Method and apparatus for in-situ monitoring of thickness using a multi-wavelength spectrometer during chemical-mechanical polishing.
  79. Murakami Tomoyasu,JPX ; Nishio Mikio,JPX, Method and apparatus for polishing semiconductor substrate.
  80. Nagahara Ronald J. ; Lee Dawn M., Method and apparatus for using across wafer back pressure differentials to influence the performance of chemical mechanical polishing.
  81. Nagahara, Ronald J.; Lee, Dawn M., Method and apparatus for using across wafer back pressure differentials to influence the performance of chemical mechanical polishing.
  82. Birang, Manoocher; Swedek, Boguslaw A.; Kim, Hyeong Cheol, Method and apparatus of eddy current monitoring for chemical mechanical polishing.
  83. Birang,Manoocher; Swedek,Boguslaw A.; Kim,Hyeong Cheol, Method and apparatus of eddy current monitoring for chemical mechanical polishing.
  84. Hu, Tien-Chen; Twu, Jin-Churng; Lu, Chen-Fa, Method for a copper CMP endpoint detection system.
  85. McGinn, Dennis L.; Stephens, William D.; Gray, J. Andy; Janssen, Betzy; Stover, Gomer E.; Waltz, James A.; Vaidyanathan, Ramaswamy; Van Hare, David R.; Marcec, Jerome J., Method for control of a chemical manufacturing process.
  86. Birang, Manoocher; Johansson, Nils; Gleason, Allan, Method for in-situ endpoint detection for chemical mechanical polishing operations.
  87. Lou Chine-Gie,TWX ; Chen Hsueh-Chung,TWX, Method for making an improved global planarization surface by using a gradient-doped polysilicon trench--fill in shallo.
  88. Hsia Shouli Steve ; Wang Yanhua ; Pallinti Jayanthi, Method for shallow trench isolations with chemical-mechanical polishing.
  89. Anderson, II, Robert L.; Charatan, Robert, Method of and platen for controlling removal rate characteristics in chemical mechanical planarization.
  90. Miller Gayle W. ; Shelton Gail D. ; Chisholm Brynne K., Method of detecting a polishing endpoint layer of a semiconductor wafer which includes a non-reactive reporting specie.
  91. Miyano Takaya,JPX ; Miura Kiyoshi,JPX ; Hasegawa Kazuto,JPX ; Shirai Yasuo,JPX, Method of detecting end point of process, end point detector, computer memory product and chemical mechanical polishing apparatus.
  92. Wu,I Wen; Tseng,Chen Chiu, Method of fabricating semiconductor integrated circuits.
  93. Hoffmann, James J.; Sabde, Gundu M.; Kramer, Stephen J.; Joslyn, Michael James, Methods and apparatuses for monitoring and controlling mechanical or chemical-mechanical planarization of microelectronic substrate assemblies.
  94. James J. Hofmann ; Gundu M. Sabde ; Stephen J. Kramer ; Michael James Joslyn, Methods and apparatuses for monitoring and controlling mechanical or chemical-mechanical planarization of microelectronic substrate assemblies.
  95. Economikos, Laertis; Rill, Elliott P., Methods and structures for achieving target resistance post CMP using in-situ resistance measurements.
  96. Kistler, Rodney; Hemker, David J.; Gotkis, Yehiel; Owczarz, Aleksander; Morel, Bruno; Williams, Damon V., Methods for detecting transitions of wafer surface properties in chemical mechanical polishing for process status and control.
  97. McClatchie,Simon; Norton,Peter; Pham,Xuyen; Zhou,Ren, Methods of and apparatus for controlling polishing surface characteristics for chemical mechanical polishing.
  98. Robinson Karl M. ; Pan Pai, Methods, apparatuses and substrate assembly structures for fabricating microelectronic components using mechanical and chemical-mechanical planarization processes.
  99. Robinson, Karl M.; Pan, Pai, Methods, apparatuses and substrate assembly structures for fabricating microelectronic components using mechanical and chemical-mechanical planarization processes.
  100. Robinson, Karl M.; Pan, Pai, Methods, apparatuses, and substrate assembly structures for fabricating microelectronic components using mechanical and chemical-mechanical planarization processes.
  101. Robinson, Karl M.; Pan, Pai, Methods, apparatuses, and substrate assembly structures for fabricating microelectronic components using mechanical and chemical-mechanical planarization processes.
  102. Robinson,Karl M.; Pan,Pai Hung, Methods, apparatuses, and substrate assembly structures for fabricating microelectronic components using mechanical and chemical-mechanical planarization processes.
  103. Pan Yang (Singaporee SGX), New chemical mechanical planarization (CMP) end point detection apparatus.
  104. Mavliev,Rashid A.; Chen,Hung Chih, Pad cleaning method.
  105. Olgado, Donald J. K.; Stevens, Joseph J.; Lerner, Alexander, Planarization of metal layers on a semiconductor wafer through non-contact de-plating and control with endpoint detection.
  106. Ono,Katsutoshi, Polishing apparatus.
  107. Kodera Masako,JPX ; Yano Hiroyuki ; Shigeta Atsushi,JPX ; Aoki Riichirou,JPX ; Yajima Hiromi,JPX ; Okano Haruo,JPX, Polishing apparatus and method for planarizing layer on a semiconductor wafer.
  108. Kodera Masako,JPX ; Yano Hiroyuki ; Shigeta Atsushi,JPX ; Aoki Riichirou,JPX ; Yajima Hiromi,JPX ; Okano Haruo,JPX, Polishing apparatus and method for planarizing layer on a semiconductor wafer.
  109. Fujii Kazuyuki,JPX ; Sasaki Takanori,JPX ; Sawada Mahito,JPX ; Tsutahara Kouichiro,JPX, Polishing apparatus and method of manufacturing a semiconductor device using the same.
  110. Watanabe Katsuhide,JPX, Polishing apparatus having interlock function.
  111. Kimura Norio (Fujisawa JPX) Sakata Fumihiko (Yokohama JPX) Takahashi Tamami (Yamato JPX), Polishing endpoint detection method.
  112. Kitajima,Tomohiko; Yasuhara,Gen, Polishing method and apparatus.
  113. Fujita, Takashi, Polishing method and polishing apparatus.
  114. Birang, Manoocher; Gleason, Allan, Polishing pad for in-situ endpoint detection.
  115. Hudson Guy F., Polishing pad with incompressible, highly soluble particles for chemical-mechanical planarization of semiconductor wafer.
  116. Fujita Takashi,JPX ; Goto Masafumi,JPX ; Nomoto Kunio,JPX, Polishing system.
  117. Beardsley Gary Joseph ; Bullard Timothy Scott ; Huynh Cuc Kim ; van Kessel Theodore Gerard ; Walker David Louis, Post CMP clean brush with torque monitor.
  118. Gary Joseph Beardsley ; Timothy Scott Bullard ; Cuc Kim Huynh ; Theodore Gerard van Kessel ; David Louis Walker, Post CMP cleaning method using a brush cleaner with torque monitor.
  119. Prabhu Golpalakrishna B., Preconditioning polishing pads for chemical-mechanical polishing.
  120. Kim Sung C. ; Bajaj Rajeev ; Zaleski Mark A., Process for polishing a semiconductor device substrate.
  121. Li Leping ; Wang Xinhui, Real-time control of chemical-mechanical polishing processes using a shaft distortion measurement.
  122. Molnar, Charles J, Semiconductor wafer finishing control.
  123. Pant Anil K. ; Breivogel Joseph R. ; Young Douglas W. ; Jairath Rahul ; Engdahl Erik H., Sensors for a linear polisher.
  124. Shouli Steve Hsia ; Yanhua Wang ; Jayanthi Pallinti, Shallow trench isolation chemical-mechanical polishing process.
  125. Kishii Sadahiro,JPX ; Hatada Akiyoshi,JPX ; Suzuki Rintaro,JPX ; Horie Hiroshi,JPX ; Arimoto Yoshihiro,JPX ; Nakamura Ko,JPX, Slurry containing manganese oxide.
  126. Allman, Derryl D. J.; Gregory, John W., Substrate planarization with a chemical mechanical polishing stop layer.
  127. Mitsuhashi Masashige (Tokyo JPX) Ono Hideyuki (Tokyo JPX), Surface polishing apparatus.
  128. Meloni Mark, System and method for detecting CMP endpoint via direct chemical monitoring of reactions.
  129. Clark-Phelps Robert B., System and method for end-point detection in a multi-head CMP tool using real-time monitoring of motor current.
  130. Taylor,Travis R.; Yi,Jingang; Norton,Peter Richard, System and method for in situ characterization and maintenance of polishing pad smoothness in chemical mechanical polishing.
  131. Gurtej S. Sandhu ; Trung Tri Doan, System for real-time control of semiconductor wafer polishing.
  132. Gurtej S. Sandhu ; Trung Tri Doan, System for real-time control of semiconductor wafer polishing.
  133. Gurtej S. Sandhu ; Trung Tri Doan, System for real-time control of semiconductor wafer polishing.
  134. Gurtej S. Sandhu ; Trung Tri Doan, System for real-time control of semiconductor wafer polishing.
  135. Sandhu Gurtej S. ; Doan Trung Tri, System for real-time control of semiconductor wafer polishing.
  136. Sandhu Gurtej S. ; Doan Trung Tri, System for real-time control of semiconductor wafer polishing.
  137. Sandhu Gurtej S. ; Doan Trung Tri, System for real-time control of semiconductor wafer polishing.
  138. Sandhu Gurtej S. ; Doan Trung Tri, System for real-time control of semiconductor wafer polishing.
  139. Sandhu, Gurtej S.; Doan, Trung Tri, System for real-time control of semiconductor wafer polishing.
  140. Sandhu Gurtej S. ; Doan Trung Tri, System for real-time control of semiconductor wafer polishing including heater.
  141. Sandhu Gurtej S. ; Doan Trung Tri, System for real-time control of semiconductor wafer polishing including optical montoring.
  142. Murarka Shyam P. (Clifton Park NY) Gutmann Ronald J. (Troy NY) Duquette David J. (Loudonville NY) Steigerwald Joseph M. (Aloha OR), Systems for performing chemical mechanical planarization and process for conducting same.
  143. Krusell Wilbur C. ; Nagengast Andrew J. ; Pant Anil K., Use of zeta potential during chemical mechanical polishing for end point detection.
  144. Cote, William J.; Leach, Michael A., Wafer polishing and endpoint detection.
  145. Bajaj Rajeev ; Litvak Herbert E. ; Surana Rahul K. ; Jew Stephen C. ; Pecen Jiri, Wafer polishing device with movable window.
  146. Bajaj Rajeev ; Litvak Herbert E. ; Surana Rahul K. ; Jew Stephen C. ; Pecen Jiri, Wafer polishing device with movable window.
  147. Isobe Akira (Tokyo JPX), Wafer polishing method and wafer polishing apparatus.
  148. Molnar,Charles J., situ finishing aid control.
섹션별 컨텐츠 바로가기

AI-Helper ※ AI-Helper는 오픈소스 모델을 사용합니다.

AI-Helper 아이콘
AI-Helper
안녕하세요, AI-Helper입니다. 좌측 "선택된 텍스트"에서 텍스트를 선택하여 요약, 번역, 용어설명을 실행하세요.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.

선택된 텍스트

맨위로