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RIE process for fabricating submicron, silicon electromechanical structures 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-021/44
  • H01L-021/48
  • H01L-021/90
출원번호 US-0038879 (1993-03-29)
발명자 / 주소
  • MacDonald Noel C. (Ithaca NY) Zhang Zuoying L. (Ithaca NY)
출원인 / 주소
  • Cornell Research Foundation, Inc. (Ithaca NY 02)
인용정보 피인용 횟수 : 77  인용 특허 : 0

초록 ▼

A reactive ion etching process is used for the fabrication of submicron, single crystal silicon, movable mechanical structures and capacitive actuators. The reactive ion etching process gives excellent control of lateral dimensions while maintaining a large vertical depth in the formation of high as

대표청구항 ▼

A reactive ion etching process for fabricating a high aspect ratio, submicron, released, single crystal silicon electromechanical structure independently of crystal orientation, comprising: forming a patterned etch mask on a top surface of a single crystal silicon substrate, the etch mask defining a

이 특허를 인용한 특허 (77)

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