초록

Polish slurry particles remaining on a semiconductor wafer after mechanical planarization are removed from the semiconductor wafer by polishing the wafer with a polishing pad while a mixture of deionized water and a surfactant is applied to the wafer and the pad.

대표청구항 ▼

1. A method for removing slurry polish particle residue after mechanical planarization of a semiconductor wafer with a slurry comprising the steps of: rotating the wafer, on an oscillating carrier assembly, against a rotating polishing pad; applying a rinse to remove the slurry from the wafer;

1. A method for removing slurry polish particle residue after mechanical planarization of a semiconductor wafer with a slurry comprising the steps of: rotating the wafer, on an oscillating carrier assembly, against a rotating polishing pad; applying a rinse to remove the slurry from the wafer; to completely remove the remaining slurry particles; apply a rinse of deionized water containing a surfactant to the polishing pad; and polishing the planarized surface of the semiconductor wafer with the pad and deionized water/surfactant mixture rinse to remove remaining slurry particles. 2. The method according to claim 1, applying the deionized water/surfactant mixture at a rate between 100 and 400 ml per minute. 3. The method according to claim 1, including the step of rotating the polishing pad on a platen. 4. The method according to claim 3, wherein the platen is rotated at approximately 80 rpm. 5. The method according to claim 1, including the step of: holding the polishing pad against the semiconductor wafer during polishing with a downward force of approximately 6 psi. 6. A method for removing slurry polish particles residue after mechanical planarization of a semiconductor wafer with a slurry comprising the steps of: rotating the wafer, on an oscillating carrier assembly, against a rotating polishing pad; applying a rinse to remove the slurry from the wafer; to completely remove the remaining slurry particles apply a rinse of deionized water containing a surfactant, including a mixture of polyoxyalkylene alkylphenyl ether and water, to a polishing pad; and polishing the planarized surface of the semiconductor wafer by applying a downward force on the polishing pad as the deionized water/surfactant mixture is applied to the semiconductor wafer, and polishing pad to remove remaining slurry particles. 7. The method according to claim 6, applying the deionized water/surfactant mixture at a rate between 100 and 400 ml per minute. 8. The method according to claim 6, including the step of rotating the carrier assembly on a platen. 9. The method according to claim 8, wherein the platen is rotated at approximately 80 rpm. 10. The method according to claim 6, including the step of: holding the polishing pad against the semiconductor wafer during polishing with a downward force of approximately 6 psi.