이 특허를 인용한 특허 (115)

1. Vranish John M., 3-D capaciflector.

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2. Colvin, James B., Apparatus and method for electronic sample preparation.

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3. Birang, Manoocher; Gleason, Allan, Apparatus and method for in-situ endpoint detection for chemical mechanical polishing operations.

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4. Birang, Manoocher; Gleason, Allan, Apparatus and method for in-situ endpoint detection for chemical mechanical polishing operations.

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5. Birang, Manoocher; Johansson, Nils; Gleason, Allan, Apparatus and method for in-situ endpoint detection for chemical mechanical polishing operations.

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6. Birang, Manoocher; Johansson, Nils; Gleason, Allan, Apparatus and method for in-situ endpoint detection for semiconductor processing operations.

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7. Birang Manoocher ; Pyatigorsky Grigory, Apparatus and method for in-situ monitoring of chemical mechanical polishing operations.

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8. Daniel David W. ; Gregory John W. ; Allman Derryl D. J., Apparatus and method of detecting a polishing endpoint layer of a semiconductor wafer which includes a metallic reporting substance.

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9. Bright, Nicolas; Hemker, David J., Apparatus and methods for controlling wafer temperature in chemical mechanical polishing.

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10. Kistler, Rodney; Hemker, David J.; Gotkis, Yehiel; Owczarz, Aleksander; Morel, Bruno; Williams, Damon V., Apparatus and methods for detecting transitions of wafer surface properties in chemical mechanical polishing for process status and control.

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11. Bright,Nicolas; Hemker,David J., Apparatus for controlling wafer temperature in chemical mechanical polishing.

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12. Taravade Kunal N., Apparatus for detecting an endpoint polishing layer of a semiconductor wafer having a wafer carrier with independent concentric sub-carriers and associated method.

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13. Tang, Wallace T. Y., Apparatus for detection of thin films during chemical/mechanical polishing planarization.

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14. Peter J. Beckage, Apparatus for determining metal CMP endpoint using integrated polishing pad electrodes.

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15. Dvir Eran,ILX ; Haimovich Eli,ILX ; Shulman Benjamin,ILX, Apparatus for optical inspection of wafers during polishing.

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16. Eran Dvir IL; Moshe Finarov IL; Eli Haimovich IL; Beniamin Shulman IL, Apparatus for optical inspection of wafers during polishing.

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17. Finarov Moshe,ILX, Apparatus for optical inspection of wafers during polishing.

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18. Finarov, Moshe, Apparatus for optical inspection of wafers during polishing.

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19. Finarov,Moshe, Apparatus for optical inspection of wafers during processing.

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20. Bright,Nicolas; Hemker,David J., Apparatus methods for controlling wafer temperature in chemical mechanical polishing.

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21. Berman Michael J., Automated inspection system for residual metal after chemical-mechanical polishing.

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22. Sugiyama Tomokazu,JPX ; Watanuki Motoichi,JPX ; Yokoi Kazuo,JPX ; Yanagida Yoshiaki,JPX ; Suto Koji,JPX, Automatic lapping method of a thin film element and a lapping apparatus using the same.

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23. Leach Michael A. (345 Sheridan #204 Palo Alto CA 94306), Block for polishing a wafer during manufacture of integrated circuits.

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24. Aiyer Arun A. ; Coon Paul Derek ; Chau Henry K., CMP variable angle in situ sensor.

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25. Zhou Mei-Sheng,SGX ; Chooi Simon,SGX, Chemical mechanical polish (CMP) endpoint detection by colorimetry.

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26. Koo, Ja-Eung; Lee, Jong-Won; Lee, Sung-Bae; Hong, Duk-Ho; Hah, Sang-Rok; Son, Hong-Seong, Chemical mechanical polishing apparatus.

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27. Mase Yasukazu,JPX ; Matsui Yoshitaka,JPX ; Kubota Takeshi,JPX ; Kitamura Toshihiko,JPX, Chemical mechanical polishing apparatus and method.

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28. Richard J. Lebel ; Rock Nadeau ; Martin P. O'Boyle ; Paul H. Smith, Jr. ; Theodore G. van Kessel ; Hemantha K. Wickramasinghe, Chemical mechanical polishing in-situ end point system.

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29. Chen Lai-Juh,TWX, Chemical-mechanical polish (CMP) pad conditioner.

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30. Chen Hsi-Chieh (Chu-Tung TWX) Hsu Shun-Liang (Hsin-Chu TWX), Chemical/mechanical planarization (CMP) endpoint method using measurement of polishing pad temperature.

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31. Zhang, Fu, Chemical/mechanical polishing endpoint detection device and method.

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32. Berman, Michael J., Determination of film thickness during chemical mechanical polishing.

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33. Baker Faye Diann ; Brooks Daniel Shaw ; Leidy Robert Kenneth ; McGuire Anne Elizabeth ; Nadeau Rock, Dishing and erosion monitor structure for damascene metal processing.

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34. Yi, Jingang; Xu, Cangshan, End point detection with imaging matching in semiconductor processing.

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35. Gail D. Shelton ; Gayle W. Miller, Endpoint detection method and apparatus which utilize a chelating agent to detect a polishing endpoint.

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36. Shelton Gail D. ; Miller Gayle W., Endpoint detection method and apparatus which utilize a chelating agent to detect a polishing endpoint.

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37. Chisholm Brynne K. ; Miller Gayle W. ; Shelton Gail D., Endpoint detection method and apparatus which utilize an endpoint polishing layer of catalyst material.

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38. Chisholm Brynne K. ; Miller Gayle W. ; Shelton Gail D., Endpoint detection method and apparatus which utilize an endpoint polishing layer of catalyst material.

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39. David Gerald Coult ; Duane Donald Wendling ; Charles William Lentz ; Bryan Phillip Segner ; Gustav Edward Derkits ; Wan-ning Wu ; Franklin Roy Dietz, In-situ automated contactless thickness measurement for wafer thinning.

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40. Black Andrew J., In-situ backgrind wafer thickness monitor.

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41. Osugi Richard S. ; Nagahara Ronald J. ; Lee Dawn M., In-situ chemical-mechanical polishing slurry formulation for compensation of polish pad degradation.

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42. Li Leping ; Barbee Steven George ; Halperin Arnold ; Heinz Tony Frederick, In-situ monitoring and control of conductive films by detecting changes in induced eddy currents.

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43. Li Leping ; Barbee Steven George ; Halperin Arnold ; Heinz Tony Frederick, In-situ monitoring of the change in thickness of films.

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44. Tang, Wallace T. Y., In-situ real-time monitoring technique and apparatus for detection of thin films during chemical/mechanical polishing planarization.

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45. Tang,Wallace T. Y., In-situ real-time monitoring technique and apparatus for detection of thin films during chemical/mechanical polishing planarization.

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46. Tang, Wallace T. Y., In-situ real-time monitoring technique and apparatus for endpoint detection of thin films during chemical/mechanical polishing planarization.

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47. Tang,Wallace T. Y., In-situ real-time monitoring technique and apparatus for endpoint detection of thin films during chemical/mechanical polishing planarization.

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48. Seliskar John J. ; Allman Derryl D. J. ; Gregory John W. ; Yakura James P. ; Kwong Dim Lee, Integrated circuit device having a capacitor with the dielectric peripheral region being greater than the dielectric central region.

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49. Huang,Picheng; Anderson,Paul E.; Stearns,Laura C.; Xue,Song S., Magnetic devices having magnetic features with CMP stop layers.

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50. Lyons, Christopher F.; Subramanian, Ramkumar; Avanzino, Steven C., Metal bridging monitor for etch and CMP endpoint detection.

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51. Lyons,Christopher F.; Subramanian,Ramkumar; Avanzino,Steven C., Metal bridging monitor for etch and CMP endpoint detection.

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52. Hiroshi Mizuno JP; Osamu Kinoshita JP; Tetsuaki Murohashi JP; Akihisa Ueno JP; Yoshifumi Sakuma JP; Kostas Amberiadis, Method and apparatus for chemical-mechanical polishing.

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53. Berman Michael J. ; Holland Karey L., Method and apparatus for concurrent pad conditioning and wafer buff in chemical mechanical polishing.

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54. Rodriquez, Jose Omar; Schultz, Laurence Darnell; Storey, Charles A., Method and apparatus for conditioning a polishing pad.

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55. Gitis Norm ; Vinogradov Michael, Method and apparatus for controlled polishing.

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56. Allman Derryl D. J. ; Daniel David W. ; Gregory John W., Method and apparatus for detecting a planarized outer layer of a semiconductor wafer with a confocal optical system.

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57. Derryl D. J. Allman ; David W. Daniel ; John W. Gregory, Method and apparatus for detecting a planarized outer layer of a semiconductor wafer with a confocal optical system.

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58. Allman Derryl D. J. ; Daniel David W. ; Chisholm Michael F., Method and apparatus for detecting a polishing endpoint based upon heat conducted through a semiconductor wafer.

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59. Allman Derryl D. J. ; Daniel David W. ; Gregory John W., Method and apparatus for detecting a polishing endpoint based upon infrared signals.

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60. Beckage, Peter J.; Edwards, Keith A.; Lukner, Ralf B.; Cho, Wonhui, Method and apparatus for detecting a process endpoint.

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61. Taravade Kunal N., Method and apparatus for detecting an endpoint polishing layer by transmitting infrared light signals through a semiconductor wafer.

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62. Miller Gayle W. ; Chisholm Michael F., Method and apparatus for detecting an ion-implanted polishing endpoint layer within a semiconductor wafer.

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63. Beckage Peter J. ; Edwards Keith A. ; Lukner Ralf B. ; Cho Wonhui, Method and apparatus for detecting the endpoint of a chemical-mechanical polishing operation.

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64. Pan Yang (Pine Grove SGX) Zheng Jiazhen (Whye Lane SGX), Method and apparatus for determination of the end point in chemical mechanical polishing.

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65. Dow Daniel B., Method and apparatus for electrically endpointing a chemical-mechanical planarization process.

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66. Dow Daniel B., Method and apparatus for electrically endpointing a chemical-mechanical planarization process.

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67. Parikh, Prabodh J., Method and apparatus for endpoint detection during chemical mechanical polishing.

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68. Mei Len,TWX, Method and apparatus for endpoint detection for chemical mechanical polishing using electrical lapping.

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69. Yau Leopoldo D. (Portland OR) Fischer Paul B. (Hillsboro OR), Method and apparatus for endpoint detection in a chemical/mechanical process for polishing a substrate.

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70. Lustig Naftali Eliahu ; Guthrie William L. ; Sandwick Thomas E., Method and apparatus for in-line oxide thickness determination in chemical-mechanical polishing.

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71. Jairath Rahul ; Pecen Jiri ; Chadda Saket ; Krusell Wilbur C. ; Cutini Jerauld J. ; Engdahl Erik H., Method and apparatus for in-situ end-point detection and optimization of a chemical-mechanical polishing process using a linear polisher.

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72. Jairath Rahul ; Pecen Jiri ; Chadda Saket ; Krusell Wilbur C. ; Cutini Jerauld J. ; Engdahl Erik H., Method and apparatus for in-situ end-point detection and optimization of a chemical-mechanical polishing process using a linear polisher.

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73. Pecen Jiri ; Chadda Saket ; Jairath Rahul ; Krusell Wilbur C., Method and apparatus for in-situ monitoring of thickness during chemical-mechanical polishing.

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74. Pecen, Jiri; Chadda, Saket; Jairath, Rahul; Krusell, Wilbur C., Method and apparatus for in-situ monitoring of thickness during chemical-mechanical polishing.

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75. Pecen Jiri ; Fielden John ; Chadda Saket ; LaComb ; Jr. Lloyd J. ; Jairath Rahul ; Krusell Wilbur C., Method and apparatus for in-situ monitoring of thickness using a multi-wavelength spectrometer during chemical-mechanical polishing.

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76. Nagahara Ronald J. ; Lee Dawn M., Method and apparatus for using across wafer back pressure differentials to influence the performance of chemical mechanical polishing.

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77. Nagahara, Ronald J.; Lee, Dawn M., Method and apparatus for using across wafer back pressure differentials to influence the performance of chemical mechanical polishing.

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78. Birang, Manoocher; Swedek, Boguslaw A.; Kim, Hyeong Cheol, Method and apparatus of eddy current monitoring for chemical mechanical polishing.

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79. Birang,Manoocher; Swedek,Boguslaw A.; Kim,Hyeong Cheol, Method and apparatus of eddy current monitoring for chemical mechanical polishing.

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80. Leach Michael A., Method and structure for polishing a wafer during manufacture of integrated circuits.

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81. Leach Michael A. (345 Sheridan #204 Palo Alto CA 94306), Method and structure for polishing a wafer during manufacture of integrated circuits.

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82. Hu, Tien-Chen; Twu, Jin-Churng; Lu, Chen-Fa, Method for a copper CMP endpoint detection system.

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83. Birang, Manoocher; Johansson, Nils; Gleason, Allan, Method for in-situ endpoint detection for chemical mechanical polishing operations.

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84. Shih, Tsu; Hung, Kun Ku; Tung, Wen-Hun; Chiou, Wen-Chin, Method for preventing or reducing anodic Cu corrosion during CMP.

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85. Hsia Shouli Steve ; Wang Yanhua ; Pallinti Jayanthi, Method for shallow trench isolations with chemical-mechanical polishing.

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86. Lukner, Ralf; Hehmeyer, Owen, Method of and apparatus for chemical-mechanical polishing.

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87. Anderson, II, Robert L.; Charatan, Robert, Method of and platen for controlling removal rate characteristics in chemical mechanical planarization.

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88. Miller Gayle W. ; Shelton Gail D. ; Chisholm Brynne K., Method of detecting a polishing endpoint layer of a semiconductor wafer which includes a non-reactive reporting specie.

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89. Miyano Takaya,JPX ; Miura Kiyoshi,JPX ; Hasegawa Kazuto,JPX ; Shirai Yasuo,JPX, Method of detecting end point of process, end point detector, computer memory product and chemical mechanical polishing apparatus.

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90. Hoffmann, James J.; Sabde, Gundu M.; Kramer, Stephen J.; Joslyn, Michael James, Methods and apparatuses for monitoring and controlling mechanical or chemical-mechanical planarization of microelectronic substrate assemblies.

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91. James J. Hofmann ; Gundu M. Sabde ; Stephen J. Kramer ; Michael James Joslyn, Methods and apparatuses for monitoring and controlling mechanical or chemical-mechanical planarization of microelectronic substrate assemblies.

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92. Economikos, Laertis; Rill, Elliott P., Methods and structures for achieving target resistance post CMP using in-situ resistance measurements.

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93. Kistler, Rodney; Hemker, David J.; Gotkis, Yehiel; Owczarz, Aleksander; Morel, Bruno; Williams, Damon V., Methods for detecting transitions of wafer surface properties in chemical mechanical polishing for process status and control.

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94. Pan Yang (Singaporee SGX), New chemical mechanical planarization (CMP) end point detection apparatus.

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95. Hu,Yongqi; Tsai,Stan D.; Wang,Yan; Liu,Feng Q.; Chang,Shou Sung; Chen,Liang Yuh, Pad assembly for electrochemical mechanical processing.

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96. Arai Hatsuyuki,JPX, Planarization method, workpiece measuring method, and surface planarization apparatus having a measuring device.

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97. Tada, Mitsuo; Takahashi, Taro; Niijima, Motohiro; Ohta, Shinro; Shigeta, Atsushi, Polishing apparatus and polishing method.

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98. Birang,Manoocher; Gleason,Allan; Guthrie,William L., Polishing assembly with a window.

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99. Kitajima,Tomohiko; Yasuhara,Gen, Polishing method and apparatus.

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100. Newell, Kelly J., Polishing pad comprising a filled translucent region.

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101. Birang, Manoocher; Gleason, Allan, Polishing pad for in-situ endpoint detection.

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102. Birang,Manoocher; Gleason,Allan; Guthrie,William L., Polishing pad with window and method of fabricating a window in a polishing pad.

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103. Nakamura, Kenro, Polishing pad, polishing apparatus and polishing method.

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104. Hiroshi Takahashi JP, Polishing simulation.

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105. Korovin, Nikolay, Process for monitoring a process, planarizing a surface, and for quantifying the results of a planarization process.

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106. Li Leping ; Wang Xinhui, Real-time control of chemical-mechanical polishing processes using a shaft distortion measurement.

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107. Shouli Steve Hsia ; Yanhua Wang ; Jayanthi Pallinti, Shallow trench isolation chemical-mechanical polishing process.

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108. Allman, Derryl D. J.; Gregory, John W., Substrate planarization with a chemical mechanical polishing stop layer.

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109. Birang, Manoocher; Pyatigorsky, Grigory, Substrate polishing metrology using interference signals.

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110. Birang, Manoocher; Pyatigorsky, Grigory, Substrate polishing metrology using interference signals.

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111. Birang, Manoocher; Pyatigorsky, Grigory, Substrate polishing metrology using interference signals.

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112. Birang, Manoocher; Pyatigorsky, Grigory, Substrate polishing metrology using interference signals.

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113. Taylor, Theodore M.; Carswell, Andrew, Systems and pads for planarizing microelectronic workpieces and associated methods of use and manufacture.

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114. Bajaj Rajeev ; Litvak Herbert E. ; Surana Rahul K. ; Jew Stephen C. ; Pecen Jiri, Wafer polishing device with movable window.

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115. Bajaj Rajeev ; Litvak Herbert E. ; Surana Rahul K. ; Jew Stephen C. ; Pecen Jiri, Wafer polishing device with movable window.

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