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Method of making a vertical gate transistor with low temperature epitaxial channel 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-021/265
출원번호 US-0113941 (1993-08-30)
발명자 / 주소
  • Hsieh Chang-Ming (Fishkill NY) Hsu Louis L. C. (Fishkill NY) Ogura Seiki (Hopewell Junction NY)
출원인 / 주소
  • International Business Machines Corporation (Armonk NY 02)
인용정보 피인용 횟수 : 29  인용 특허 : 0

초록

A field effect transistor (FET) with a vertical gate and a very thin channel sandwiched between source and drain layers. In a preferred embodiment of the invention, the FET is formed on a silicon on insulator (SOI) substrate with the silicon layer serving as the first layer (e.g., the source layer).

대표청구항

A method of fabricating a pair of field effect transistors with a common vertical gate on a silicon-on-oxide layer, comprising the steps of: forming a source layer in the silicon layer of the silicon-on-oxide layer; forming a channel substrate layer by a low temperature epitaxial process overlying s

이 특허를 인용한 특허 (29)

  1. Horch, Andrew; Robins, Scott, Fin thyristor-based semiconductor device.
  2. Horch,Andrew; Robins,Scott, Fin thyristor-based semiconductor device.
  3. Wang,Hongmei; Zahurak,John K., Fully-depleted (FD) (SOI) MOSFET access transistor.
  4. Wang,Hongmei; Zahurak,John K., Fully-depleted (FD) (SOI) MOSFET access transistor.
  5. Wang, Hongmei; Zahurak, John K., Fully-depleted (FD) (SOI) MOSFET access transistor and method of fabrication.
  6. Wang, Hongmei; Zahurak, John K., Fully-depleted (FD)(SOI) MOSFET access transistor and method of fabrication.
  7. Li, You; Gauthier, Jr., Robert J.; Mitra, Souvick; Yu, Mickey, Low capacitance electrostatic discharge (ESD) devices.
  8. Mollison, Karl W.; LeCaptain, Angela M.; Burke, Sandra E.; Cromack, Keith R.; Tarcha, Peter J.; Chen, Yen-Chih J.; Toner, John L., Medical devices containing rapamycin analogs.
  9. Horch, Andrew, Method for making an inlayed thyristor-based device.
  10. Wang,Hongmei; Zahurak,John K., Method of forming fully-depleted (FD) SOI MOSFET access transistor.
  11. Tiwari Sandip ; Wind Samuel Jonas, Method of making self-aligned dual gate MOSFET with an ultranarrow channel.
  12. Pradeep, Yelehanka; Zheng, Jia Zhen; Chan, Lap; Quek, Elgin; Sundaresan, Ravi; Pan, Yang; Meng, James Lee Yong; Keung, Ying, Method to form a vertical transistor by first forming a gate/spacer stack, then using selective epitaxy to form source, drain and channel.
  13. Fernando Gonzalez ; Er-Xuan Ping, Methods of forming DRAM assemblies, transistor devices, and openings in substrates.
  14. Gonzalez, Fernando; Ping, Er-Xuan, Methods of forming DRAM assemblies, transistor devices, and openings in substrates.
  15. Schuele,Paul J.; Voutsas,Apostolos T., Multi-planar layout vertical thin-film transistor inverter.
  16. Braithwaite, Glyn; Hammond, Richard; Currie, Matthew, RF circuits including transistors having strained material layers.
  17. Kirk Prall, SEMICONDUCTOR-ON-INSULATOR TRANSISTOR, MEMORY CIRCUITRY EMPLOYING SEMICONDUCTOR-ON-INSULATOR TRANSISTORS, METHOD OF FORMING A SEMICONDUCTOR-ON-INSULATOR TRANSISTOR, AND METHOD OF FORMING MEMORY CIRCU.
  18. Prall, Kirk, SEMICONDUCTOR-ON-INSULATOR TRANSISTOR, MEMORY CIRCUITRY EMPLOYING SEMICONDUCTOR-ON-INSULATOR TRANSISTORS, METHOD OF FORMING A SEMICONDUCTOR-ON-INSULATOR TRANSISTOR, AND METHOD OF FORMING MEMORY CIRCU.
  19. Currie, Matthew T.; Lochtefeld, Anthony J.; Hammond, Richard; Fitzgerald, Eugene A., Semiconductor structures employing strained material layers with defined impurity gradients and methods for fabricating same.
  20. Currie, Matthew T.; Lochtefeld, Anthony J.; Hammond, Richard; Fitzgerald, Eugene A., Semiconductor structures employing strained material layers with defined impurity gradients and methods for fabricating same.
  21. Currie, Matthew; Lochtefeld, Anthony; Hammond, Richard; Fitzgerald, Eugene, Semiconductor structures employing strained material layers with defined impurity gradients and methods for fabricating same.
  22. Currie, Matthew; Lochtefeld, Anthony; Hammond, Richard; Fitzgerald, Eugene, Semiconductor structures employing strained material layers with defined impurity gradients and methods for fabricating same.
  23. Kirk Prall, Semiconductor-on-insulator transistor and memory circuitry employing semiconductor-on-insulator transistors.
  24. Einav, Moshe, Thin film field effect transistor.
  25. Wu, Chen-Yi; Kao, Yih-Chyun; Huang, Chun-Yao, Thin film transistor and pixel structure having the thin film transistor.
  26. Boles Timothy ; O'Keefe Matthew F. ; Sledziewski John M., Ultrahigh vacuum deposition of silicon (Si-Ge) on HMIC substrates.
  27. Emmi Peter A. ; Park Byeongju, Vertical channel field effect transistor.
  28. Chu Jack Oon (Astoria NY) Hsu Louis Lu-Chen (Fishkill NY) Mandelman Jack Allan (Stormville NY) Sun Yuan-Chen (Katonah NY) Taur Yuan (Bedford NY), Vertical double-gate field effect transistor.
  29. Chu Jack Oon ; Hsu Louis Lu-Chen ; Mandelman Jack Allan ; Sun Yuan-Chen ; Taur Yuan, Vertical double-gate field effect transistor.
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