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Integrated building and conveying structure for manufacturing under ultraclean conditions 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • B01L-001/04
  • F24F-007/007
출원번호 US-0121621 (1993-09-14)
발명자 / 주소
  • Scott Richard G. (Austin TX) Shackleton Craig R. (Austin TX) Ellis Raymond W. (Austin TX)
출원인 / 주소
  • Sematech, Inc. (Austin TX 02)
인용정보 피인용 횟수 : 76  인용 특허 : 0

초록 ▼

A building houses a semiconductor manufacturing facility, which is circular in shape and is of a multi-story structure. A silo is located at the center for use in storing and transferring wafers to clean rooms disposed radially around the silo at each floor. Human access is not permitted in the silo

대표청구항 ▼

A method of fabricating microelectronic devices on a material under an ultra-clean environment in which processing steps for processing said material are conducted in separate and isolated minienvironments, comprising the steps of: providing a manufacturing building having a central enclosure enclos

이 특허를 인용한 특허 (76)

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  3. Lowrance, Robert B.; Miller, Michael; Somekh, Sass; Madigan, Conor; Vronsky, Eliyahu; Birang, Manoocher, Apparatus and method for control of print gap.
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