초록 ▼

A method is disclosed for removing oxide from the surface of a semiconductor body having a thick oxide and an adjoining nitride-covered thin oxide, without subjecting the surface to significant over-etching and thus avoiding degredation of the surface of the semiconductor body. The thick oxide is fi

A method is disclosed for removing oxide from the surface of a semiconductor body having a thick oxide and an adjoining nitride-covered thin oxide, without subjecting the surface to significant over-etching and thus avoiding degredation of the surface of the semiconductor body. The thick oxide is first etched for a period of time so that a portion of the thick oxide remains, and has a thickness comparable to that of the thin oxide. The nitride covering the thin oxide is next removed without appreciably etching either the remaining portion of the thick oxide or the thin oxide. Finally, the thin oxide and the remaining portion of the thick oxide are removed, without appreciably over-etching the surface of the semiconductor body.

대표청구항 ▼

A method for removing a dielectric from the surface of a semiconductor body, wherein the dielectric comprises a first dielectric and a second dielectric in respective first and second regions of the semiconductor body, and wherein the second dielectric is thicker than the first dielectric, comprisin

A method for removing a dielectric from the surface of a semiconductor body, wherein the dielectric comprises a first dielectric and a second dielectric in respective first and second regions of the semiconductor body, and wherein the second dielectric is thicker than the first dielectric, comprising the steps of: providing a protective layer covering the first dielectric, the protective layer comprising a material not highly reactive to a dielectric etchant; converting with use of the dielectric etchant the second dielectric into a third dielectric having a thickness comparable to the thickness of the first dielectric, wherein the protective layer masks the first dielectric from the dielectric etchant, subsequent to the dielectric converting step, removing the protective layer; and subsequent to the protective layer removing step, commonly etching the first and third dielectrics down to respective first and second surfaces of the semiconductor body, wherein neither the first surface nor the second surface is appreciably degraded due to over-etching.