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Microwave integrated circuit having a passive circuit substrate mounted on a semiconductor circuit substrate 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-023/12
출원번호 US-0130555 (1993-10-01)
우선권정보 JP-0298137 (1992-10-09)
발명자 / 주소
  • Tanino Noriyuki (Itami JPX)
출원인 / 주소
  • Mitsubishi Denki Kabushiki Kaisha (Tokyo JPX 03)
인용정보 피인용 횟수 : 71  인용 특허 : 0

초록

A microwave integrated circuit includes a semiconductor substrate having semiconductor elements, such as transistors, diodes, resistors, and the like, and a passive circuit substrate having passive circuit elements, such as microstrip or coplanar transmission lines, spiral inductors, capacitances, a

대표청구항

A microwave integrated circuit comprising: a passive circuit substrate comprising a thin dielectric film having opposite first and second surfaces, a thin conductive film disposed on the second surface of said thin dielectric film, passive circuit elements having respective terminals disposed on the

이 특허를 인용한 특허 (71)

  1. Tserng Hua Quen ; Saunier Paul ; Sanzgiri Shashikant M., Antenna having elements with improved thermal impedance.
  2. Akram, Salman; Ahn, Kie Y.; Forbes, Leonard, Atomic layer deposition (ALD) high permeability layered magnetic films to reduce noise in high speed interconnection.
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  21. Forbes, Leonard; Ahn, Kie Y.; Akram, Salman, High permeability composite films to reduce noise in high speed interconnects.
  22. Forbes, Leonard; Ahn, Kie Y.; Akram, Salman, High permeability composite films to reduce noise in high speed interconnects.
  23. Forbes, Leonard; Ahn, Kie Y.; Akram, Salman, High permeability composite films to reduce noise in high speed interconnects.
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