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Method for arc discharge plasma vapor deposition of diamond 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • B05D-001/02
출원번호 US-0177504 (1988-04-04)
우선권정보 JP-0083318 (1987-04-03); JP-0220437 (1987-09-04); JP-0245853 (1987-10-01); JP-0250598 (1987-10-06); JP-0257632 (1987-10-13); JP-0257635 (1987-10-13); JP-0320142 (1987-12-19); JP-0330130 (1987-12-28); JP-0003
발명자 / 주소
  • Kurihara Kazuaki (Atsugi JPX) Sasaki Kenichi (Atsugi JPX) Kawarada Motonobu (Atsugi JPX) Koshino Nagaaki (Yokohama JPX)
출원인 / 주소
  • Fujitsu Limited (Kawasaki JPX 03)
인용정보 피인용 횟수 : 196  인용 특허 : 0

초록 ▼

A method for vapor deposition of diamond by effecting an arc discharge while feeding a discharge gas between an anode and a cathode of a thermal plasma chemical vapor deposition device, radicalizing a gaseous carbon compound by feeding the gaseous carbon compound into a generated plasma jet, and per

대표청구항 ▼

A method of vapor deposition of diamond comprising the steps of: effecting an arc discharge while feeding a discharge gas containing hydrogen between an anode and a cathode of a thermal plasma chemical vapor deposition device to thereby generate a plasma jet containing dissociated hydrogen atoms; ra

이 특허를 인용한 특허 (196)

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